The invention discloses a power device with an electrostatic protection structure and a manufacturing method of the power device. The power device with the electrostatic protection structure comprises a drifting layer, a drain region, a drain
electrode, a P- doped region, a first N+ doped region, a P+ doped region, a first insulating film, a second insulating film, a
polycrystalline silicon layer, a gate
electrode, an electrostatic
protection layer, a third insulating film, a source
electrode, an electrostatic electrode and a conductor layer. The electrostatic
protection layer comprises a plurality of second P- doped regions and a plurality of second N+ doped regions, wherein the second P- doped regions and the second N+ doped regions are arranged alternately. By alternately arranging the P- doped regions and the second N+ doped regions in the power device, an electrostatic
protection layer-
Zener diode structure is formed, and thus space in a
power module will not be occupied by an electrostatic protection circuit and the like while an electrostatic protection structure does not need to be additionally arranged, the space efficiency of the
power module is improved, the number of wires and the number of some parasitic parameters are reduced, and the efficient power device is obtained.