Power device with electrostatic protection structure and manufacturing method thereof
A power device, electrostatic protection technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of power modules that cannot be minimized and difficult power modules
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[0032] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0033] see Figure 15 The present invention provides a power device with an electrostatic protection structure, comprising: a drift layer 2, a drain region 5 formed under the drift layer 2, a drain electrode 6 formed under the drain region 5, and a drain electrode 6 formed under the drain region 5. The P-doped region 11 in the drift layer 2, the first N+ doped region 13 formed in the drift layer 2, the P+ doped region 14 formed in the drift layer 2, formed in the drift layer 2, the second insulating film 32 formed on the drift layer 2, the first P-doped region 11 and the first N+ doped region 14, formed on the first and second The polysilicon layer 33 on the insulating films 31, 32, the gate 34 formed on the second insulating film 32, the electrostatic protection layer 3 formed on the first insulating film 31, the gate 34 formed on the gate ...
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