Low-temperature polycrystalline silicon thin film and preparation method thereof and low-temperature polycrystalline silicon thin film transistor

A low-temperature polysilicon and polysilicon technology, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of excessive protrusions on the surface of polysilicon

Active Publication Date: 2015-02-18
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0006] Based on this, it is necessary to provide a low-temperature polysilicon thin film and its preparation me

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  • Low-temperature polycrystalline silicon thin film and preparation method thereof and low-temperature polycrystalline silicon thin film transistor
  • Low-temperature polycrystalline silicon thin film and preparation method thereof and low-temperature polycrystalline silicon thin film transistor
  • Low-temperature polycrystalline silicon thin film and preparation method thereof and low-temperature polycrystalline silicon thin film transistor

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Embodiment Construction

[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0030] In order to solve the problem of excessive protrusions on the surface of polysilicon and the introduction of impurities, a method for preparing a low-temperature polysilicon film is proposed.

[0031] like image 3 Shown, the preparation method of the low-temperature polysilic...

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Abstract

Disclosed are a low-temperature polycrystalline silicon thin film and a preparation method thereof and a low-temperature polycrystalline silicon thin film transistor. The preparation method includes precipitating a first amorphous silicon layer on a first buffer layer of a substrate, and subjecting the first amorphous silicon layer to excimer laser annealing to form a first polycrystalline silicon film; precipitating a second amorphous silicon layer on the first polycrystalline silicon film, and subjecting the second amorphous silicon layer to the excimer laser annealing to form a second polycrystalline silicon film. According to the low-temperature polycrystalline silicon thin film and the preparation method thereof, surface protrusion height of the polycrystalline is reduced, polycrystalline grain distribution is more uniform, and other material is omitted during the preparation.

Description

technical field [0001] The invention relates to the technical field of polysilicon, in particular to a low-temperature polysilicon film, a preparation method of the low-temperature polysilicon film and a low-temperature polysilicon thin film transistor made of the low-temperature polysilicon film. Background technique [0002] Organic light-emitting display device (OLED) is an active light-emitting device. Compared with the current mainstream flat-panel display technology thin film transistor liquid crystal display (TFT-LCD), OLED has the advantages of high contrast, wide viewing angle, low power consumption, and smaller size. Therefore, OLED It is expected to become the next-generation flat-panel display technology after LCD, and it is one of the most concerned technologies in flat-panel display technology. [0003] At present, low-temperature polysilicon thin-film transistors (LTPS-TFT) are mainly used to drive OLEDs to emit light. Among them, low-temperature polysilicon t...

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Application Information

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IPC IPC(8): H01L21/20H01L21/336
CPCH01L21/02532H01L21/02595H01L21/2053H01L21/324H01L29/786
Inventor 葛泳刘玉成朱涛顾维杰
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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