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Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system

A low-temperature polysilicon, pre-cleaning technology, applied in the direction of cleaning methods using liquids, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems affecting the uniformity of the polysilicon layer and the uneven thickness of the amorphous silicon film, and achieve Improve the uneven thickness, narrow the gap between thickness and thickness, and improve the effect of uniformity

Inactive Publication Date: 2014-03-26
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

However, since the thickness of the amorphous silicon film is actually uneven, this will directly affect the uniformity of the polysilicon layer.

Method used

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  • Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system
  • Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system
  • Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system

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Embodiment Construction

[0027] In the following, the embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0028] The present invention provides a low-temperature polysilicon thin film fabrication system 100, such as figure 1 As shown, it at least includes a sample stage 10 , an epitaxial growth device 20 , an excimer laser beam 30 , a pre-cleaning device 40 , and a temperature control device 50 . in,

[0029] The epitaxial growth device 20 is correspondingly arranged above the sample stage 10 for growing an amorphous silicon layer (not shown in the figure) and other necessary material layers for forming a polysilicon thin film on the sample stage 10 .

[0030] The pre-cleaning device 40 is correspondingly arranged above the sample stage 10, and it includes several evenly arranged shower heads 41, through which the cleaning agent is controllably sprayed out to clean the amorphous silicon material. pre-cleaned.

[0031] The temperature contr...

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Abstract

The invention relates to the technical field of liquid crystal display, in particular to a low-temperature polycrystalline silicon film preparation method. The preparation method includes the steps: firstly, sequentially growing a buffer layer and an amorphous silicon layer on a substrate from bottom to top; secondly, heating the amorphous silicon layer to reach the temperature higher than the room temperature and pre-cleaning the amorphous silicon layer; thirdly, irradiating the amorphous silicon layer pre-cleaned in the second step by the aid of an excimer laser beam and converting amorphous silicon into polycrystalline silicon. The invention further provides a polycrystalline silicon film manufacturing system. By improving the low-temperature polycrystalline silicon film manufacturing system and the low-temperature polycrystalline silicon film pre-cleaning method, the non-uniform thickness of the amorphous silicon layer is improved, and accordingly, uniformity of converting the amorphous silicon layer into a polycrystalline silicon film by ELA (excimer laser annealing) in subsequent steps is improved.

Description

technical field [0001] The invention belongs to the technical field of liquid crystal displays, and relates to a method for preparing a low-temperature polysilicon thin film. Background technique [0002] With the development of flat panel displays, the demand for display panels with high resolution and low energy consumption is increasing, and the requirements for the materials for making the display panels are also increasing. Among them, low-temperature polysilicon materials have been extensively studied. This material can be obtained at a lower reaction temperature by using amorphous silicon materials, has high electron mobility, and can be used to make C-MOS circuits to meet the needs of high-resolution and low-power consumption display panels. [0003] The current methods for producing low-temperature polysilicon include solid phase crystallization (SPC), metal-induced crystallization (MIC) and excimer laser annealing (ELA), among which excimer laser beam (ELA) anneal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B08B3/08
CPCH01L21/02057H01L21/02422H01L21/02488H01L21/02499H01L21/02532H01L21/02595H01L21/02661H01L21/02675B08B3/08H01L21/02686H01L21/67109H01L21/02068H01L21/32115H01L21/67051H01L21/02052H01L21/02636H01L21/67098H01L21/67207H01L21/268C30B25/08C30B25/10C30B25/183H01L21/02592
Inventor 张隆贤
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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