794results about How to "High surface flatness" patented technology

A capacitor comprising: a capacitor body including a plurality of laminated dielectric layers, a plurality of inner electrode layers which are respectively disposed between mutually adjacent ones of the dielectric layers, a first main surface located in a laminated direction of the dielectric layers, and a second main surface opposite to the first main surface; a first outer electrode formed on the first main surface of the capacitor body and electrically connected to the inner electrode layers; a second outer electrode formed on the second main surface of the capacitor body and electrically connected to the inner electrode layers; a first dummy electrode formed on the first main surface of the capacitor body; and a second dummy electrode formed on the second main surface of the capacitor body.

A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

To provide an IC card, which secures satisfied flatness of the card surface to achieve good printing properties on the card surface. An IC card has a core layer which includes a plurality of sheet materials wherein inner core sheets adjacent to an IC module have through holes formed in a region corresponding to the IC mounted portion, wherein a relationship A=(B1+C1)±30 μm is satisfied, where A (μm) represents the sum of heights of the through holes, B1 represents a projection height on an IC mounted surface of the IC module, and C1 represents a projection height on an IC non-mounted surface. By virtue of having this structure, the IC card can secure card flatness sufficient to obtain satisfied printing properties with respect to the rewrite sheet.

The invention provides a deep-UV light-emitting diode and a preparation method thereof. A low-temperature GaN insertion layer is used to replace an AlN/AlGaN superlattice or a high-temperature GaN insertion layer to grow the deep-UV light-emitting diode. The low-temperature GaN insertion layer is a GaN with thickness of 20-50nm under the conditions of temperature being 400-900 DEG C, pressure being 30-200torr, and V/III being 1500-2500. The method can effectively lower the dislocation density in an epitaxial AlGaN layer and a quantum well, and improves the surface planeness. The prepared LED component has smooth surface, better crystal quality, starting voltage reduction, and smaller serial resistances of the component; and the electroluminescene peak value is ranged from 300nm to 370nm.

A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

Embodiments of the invention provide a perpendicular magnetic recording medium improved for fly ability, high in read signal quality, and capable of suppressing magnetic decay of recorded magnetization to be caused by stray fields. In one embodiment, a perpendicular recording layer is formed over a substrate with a soft magnetic underlayer therebetween, then an amorphous or nano-crystalline layer is formed between the substrate and the soft magnetic underlayer. The soft magnetic underlayer includes first and second amorphous soft magnetic layers, as well as a nomnagnetic layer formed between those first and second amorphous soft magnetic layers. The first and second amorphous soft magnetic layers are given uniaxial anisotropy in the radial direction of the substrate respectively and coupled with each other antiferromagnetically.

The invention provides a display device having a thin film transistor and a storage capacitor storing a display signal applied to a pixel electrode through this thin film transistor on a substrate, where dielectric strength between electrodes forming the storage capacitor is enhanced for increasing the yield. In the storage capacitor, a lower storage capacitor electrode, a thin lower storage capacitor film, a polysilicon layer, an upper storage capacitor film and an upper storage capacitor electrode are layered. The polysilicon layer is formed by crystallization by laser annealing. The polysilicon layer of the storage capacitor is microcrystalline and thus the flatness of its surface is enhanced. The pattern of the polysilicon layer (storage capacitor electrode) is formed larger than the bottom portion of an opening, and the edge of its peripheral portion is located on a buffer film on the slant portion of the opening or on the buffer film on the outside of the opening.

The invention relates to a method for preparing graphene on a copper plating substrate. The method is characterized by comprising the following steps of: preparing the graphical copper plating substrate on a silicon chip; and growing the graphene on the copper plating substrate for 2 to 5 minutes at the temperature of between 800 and 1,000 DEG C by using a normal pressure chemical vapor deposition method, using methane as a carbon source and using argon and hydrogen as carrier gases. A graphical graphene film can be directly prepared by the method, and the substrate can be compatible with an integrated circuit (IC) process; and the manufacturing method is simple and low in cost, and can be used for large-scale manufacture.

The invention discloses an anti-fingerprint TPU protective film for a 3D curved screen. The protective film comprises a low-viscosity protective film, an anti-fingerprint UV hardening coating, an optical hard TPU resin film layer, an optical-grade high-viscosity silica gel pressure-sensitive adhesive layer and a fluorine element release film which are attached from top to bottom; the anti-fingerprint UV hardening coating is formed by coating an anti-fingerprint UV hardening coating; the optical hard TPU resin film layer is formed by coating optical hard TPU glue, the optical-grade high-viscosity silica gel pressure-sensitive adhesive layer is formed by coating an optical-grade high-viscosity silica gel pressure-sensitive adhesive; the anti-fingerprint UV hardening coating is prepared fromthe following components: UV prepolymer resin, an acrylate reactive diluent, a photoinitiator, a slipping aid and a first solvent, the optical-grade hard TPU glue is formed by polymerizing polyisocyanate, polyester polyol and a chain extender in a second solvent under the action of a first catalyst; the optical-grade high-viscosity silica gel pressure-sensitive adhesive is composed of silica gel resin, a cross-linking agent, an anchoring agent and a second catalyst. The anti-fingerprint TPU protective film for a 3D curved screen has the properties of fingerprint resistance, scratch resistance,difficulty in bursting and good fitting property of the curved screen.

It is considered that in the fabricating steps of a TFT substrate, a color filter layer is prepared at the same alignment accuracy. However, since the heat resistance temperature is about 200° C., it could not withstand the process temperature of about 450° C. in the TFT. The pixel section is formed by arraying in a matrix shape a light emitting element in which an organic compound layer having the luminous property is formed between a pair of electrodes consisting of a translucent electrode and a non-translucent electrode and a TFT, the coloring layer of color filter provided corresponding to each pixel is provided in contact with the flat surface of the flattened insulating film composed of an inorganic or organic material between the light emitting element and the TFT, the boundary region of coloring layers adjacent each other is provided while overlapping with a gate signal line or data line for transmitting a signal to the TFT, and the translucent electrode is provided while overlapping with the layer inside of the coloring layer.

An ink includes a volatile organic solvent and a UV curable ink. The ink has a viscosity greater than or equal to 3 mPa·sec and less than or equal to 18 mPa·sec (at 25° C.). The UV curable ink has a viscosity of greater than or equal to 20 mPa·sec (at 25° C.). The UV curable ink comprises a pigment, an ultraviolet curable resin curable by an ultraviolet light, and a photopolymerization initiator.

The invention provides a method for making a flexible, transparent and conductive film made of metal nanowires, and belongs to the technical field of conductive film materials. A layer of metal nanowire film is made on a rigid plane substrate according to a solution processing method, then a layer of transparent and flexible substrate is made on the metal nanowire film according to the solution processing method, and finally the flexible substrate with the metal nanowires on the surface is removed from the plane substrate to form the flexible, transparent and conductive film made of the metal nanowires. Compared with a traditional flexible, transparent and conductive film made of metal nanowires directly on a flexible substrate, the flexible, transparent and conductive film made of the metal nanowires through the method has the advantages of being high in surface flatness, large in adhesion force and the like and effectively solving the problems that a flexible, transparent and conductive film made of metal nanowires is large in roughness and small in adhesion force. The flexible, transparent and conductive film made of the metal nanowires has the potential of being applied in the fields of photoelectric devices like film solar cells and organic light-emitting diodes.

A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).

A glass substrate having a surface which has been leveled, preferably to a flatness of 0.04-1.3 nm/cm² of the surface, by local plasma etching is provided. A glass substrate whose surface carries microscopic peaks and valleys is leveled by measuring the height of peaks and valleys on the substrate surface, and plasma etching the substrate surface while controlling the amount of plasma etching in accordance with the height of peaks.

The invention discloses a control technological method for the planeness of the surface of an LTCC (low temperature co-fired ceramic) substrate. Specific steps are as follows: preparing raw ceramic sheets for the preparation of an LTCC substrate, and punching circuit through holes with a punch press; tearing off a Mylar film; filling LTCC technological hole metal slurry on the raw ceramic sheets, using a roller to roll the holes so as to evenly press flat the protrusions of the holes filled with the metal slurry, and printing LTCC technological metal conductor slurry on the raw ceramic sheets so as to form a circuit figure; aligning and stacking all the raw ceramic sheets layer by layer, and laminating so as to obtain a large bulk of LTCC raw ceramic blank; and after cutting the large bulk of LTCC raw ceramic blank into circuits in the shape of small blocks, sintering so as to obtain the compact and flat LTCC circuit substrate. Therefore, the technological process of planeness control for the surface of the LTCC substrate is achieved. The method, which is low in cost, simple and effective, is suitable for the development and production of substrates with a complex cavity structure of an embedded chip requiring a lot for surface planeness, and substrates automatically micropackaged in a batch manner.

The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.

A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.

The present invention provides a manufacturing method that allows a Group III nitride substrate with a low dislocation density to be manufactured, and a semiconductor device that is manufactured using the manufacturing method. The manufacturing method includes, in an atmosphere including nitrogen, allowing a Group III element and the nitrogen to react with each other in an alkali metal melt to cause generation and growth of Group III nitride crystals. In the manufacturing method, a plurality of portions of a Group III nitride semiconductor layer are prepared, selected as seed crystals, and used for at least one of the generation and the growth of the Group III nitride crystals, and then surfaces of the seed crystals are brought into contact with the alkali metal melt.

A silicon carbide semiconductor device includes a MOSFET and a peripheral high-breakdown-voltage structure. A source region has a first recess. Trenches extend from the bottom of the first recess. A gate insulating film has an extension the shape of which follows the shape of the first recess. The surface of a gate electrode is positioned to be flush with or below the upper surface of the extension.

The invention relates to the technical field of touch control and especially relates to a capacitive touch control panel. The capacitive touch control panel comprises a baseplate, a first nanometer silver line conducting layer and a second nanometer silver line conducting layer, wherein the second nanometer silver line conducting layer is formed on one of surfaces of the baseplate, the first nanometer silver line conducting layer comprises a plurality of first conducting electrodes and a plurality of first alignment lines, and the second nanometer silver line conducting layer comprises a plurality of second conducting electrodes, a plurality of second alignment lines, a plurality of connecting lines and a connecting area. The capacitive touch control panel also comprises a plurality of through holes, wherein the first alignment lines are electrically connected with the connecting lines through the through holes.

The invention belongs to the technical field of microelectronic and flat panel display, and particularly relates to a flexible ZnO based thin film transistor and a preparation method thereof. The flexible thin film transistor comprises a flexible substrate, a flat layer, an isolation buffer layer, a gate, a gate insulating layer, a source electrode, a drain electrode and semiconductor channel layers. N type and P type zinc oxide semiconductor channel layers are prepared by using a simple inorganic solution method, and the temperature of the whole process is controlled within 200 DEG C. When in manufacturing, the flat layer and the isolation buffer layer with the same thickness are grown at two sides of the substrate, the flexible substrate bending in the process is alleviated through a thermal annealing mode, and the subsequent lithography alignment accuracy is improved. According to the transistor and the preparation method, the maneuverability and stability of the flexible TFT and subsequent devices can be improved, the preparation process is simple, and the production cost is low.