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Composition for copper plating and associated methods

a technology of copper plating and associated methods, applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve problems such as problems in aluminum wiring, reduce void generation in copper wiring, reduce void generation, and prolong usable life.

Inactive Publication Date: 2010-04-08
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]It is a feature of an embodiment to provide a method of forming a copper wiring, which may fill a recess or a hole having a high aspect ratio with copper while reducing generation voids in the copper wiring.
[0008]It is another feature of an embodiment to provide a plating composition having an extended usable life span and greatly reduces generation of voids.
[0009]It is another feature of an embodiment to provide a plating composition having improved hole or trench filling characteristics.
[0010]It is another feature of an embodiment to provide a plating composition that produces a copper wiring with enhanced surface flatness.

Problems solved by technology

Aluminum has a relatively high specific resistance, and therefore, aluminum wiring may have problems relating to signal delay in a circuit, which may be obstacles to fabricating a high-speed and / or high-performance circuit.

Method used

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  • Composition for copper plating and associated methods
  • Composition for copper plating and associated methods
  • Composition for copper plating and associated methods

Examples

Experimental program
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Effect test

example 1

[0091]An aqueous solution including copper sulfate pentahydrate (CuSO4·5H2O) at a concentration of about 50 g / L, sulfuric acid (H2SO4) at a concentration of about 10 g / L, and hydrochloric acid (HCl) at a concentration of about 50 mg / L was prepared as an electrolyte solution. After adding a disulfide compound (as an accelerator) to a concentration of about 25 mg / L, a triblock copolymer of PEO-PPO-PEO (as a suppressor) to a concentration of about 100 mg / L, and Janus Green B (diethyl safranine azo dimethyl aniline) (as a leveler) to a concentration of about 10 mg / L into the aqueous electrolyte solution, the admixture was sufficiently stirred to prepare a composition for copper plating. Pluronic L62 ((EO)5(PO)30(EO)5), which has a Mw of about 2,200 g / mol and an EO content (EO %) of about 20% (w / w), was used as the suppressor. Bis(3-sulfo-3-methylpropyl) disulfide dipotassium salt (Me-SPS) was used as the accelerator.

example 2

[0093]A composition for copper plating was prepared by substantially the same method as that of Example 1, except that Pluronic L64 ((EO)13(PO)30(EO)13) having a Mw of about 2,900 g / mol and an EO content (EO %) of about 40% (w / w) was used as the suppressor instead of using Pluronic L62.

example 3

[0094]A composition for copper plating was prepared by substantially the same method as that of Example 1, except that Pluronic L44 ((EO)10(PO)23(EO)10) having a Mw of about 2,200 g / mol and an EU content (EO %) of about 40% (w / w) was used as the suppressor instead of using Pluronic L62.

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Abstract

A composition for copper plating and associated methods, a method of forming a copper wiring including forming an insulation layer having a recessed portion on a substrate, and forming a copper layer on the insulation layer to fill the recessed portion by performing an electroplating process using a composition that includes an aqueous electrolyte solution containing a copper ion and at least one of a disulfide compound represented by Formula 1, a betaine compound represented by at least one of Formulae 3 and 4, and a triblock copolymer of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO) having a weight average molecular weight of about 2,500 to about 5,000 g / mol and an ethylene oxide content (EO %, w / w) of about 30% to about 60%.

Description

BACKGROUND[0001]1. Field[0002]Embodiments relate to a composition for copper plating and associated methods.[0003]2. Description of the Related Art[0004]As the integration degree of an electronic device, a semiconductor device, and / or an integrated circuit device increases, a width and / or a thickness of a line or a wiring and an intervals therebetween have become smaller. Use of a metal material having low resistance has also increased to form a fine or ultrafine wiring without a decrease in a response rate. Aluminum wiring has typically been used as a wiring of an integrated circuit device and, recently, use of a copper wiring is increasing.[0005]Aluminum has a relatively high specific resistance, and therefore, aluminum wiring may have problems relating to signal delay in a circuit, which may be obstacles to fabricating a high-speed and / or high-performance circuit. Copper wiring has been used as a substitute of the aluminum wiring. Copper has a specific resistance about 40% lower ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C25D5/16
CPCC25D3/38H01L21/76877H01L21/2885C25D7/0607C25D7/123
Inventor PARK, MYUNG-BEOMJIN, HYE-YOUNGLEE, JIN-SEOCHA, HYE-JINCHOI, JUNG-SIKLEE, JUNG-HOLEE, KI-HAG
Owner SAMSUNG ELECTRONICS CO LTD
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