Polishing solution for reducing copper chemical mechanical polishing roughness

A chemical mechanical and roughness technology, applied in the direction of polishing compositions containing abrasives, can solve the problems of polishing surface damage, difficulty in subsequent cleaning, and low polishing efficiency, so as to improve surface flatness and reduce copper surface roughness , the effect of small damage

Inactive Publication Date: 2010-03-10
DALIAN SANDAAOKE CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing copper CMP polishing fluids are basically composed of raw materials such as abrasives, oxidizing agents, passivating agents, corrosive agents, and active agents, which have the disadvantages of low polishing efficiency, difficult post-order cleaning, and easy environmental pollution. Larger damage to the polished surface

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] It is composed of abrasive particles, nitrogen-containing polymers, chelating agents, surfactants, corrosion inhibitors, oxidants and deionized water. The mass percentage of each raw material is: abrasive particles 0.1% to 30%, nitrogen-containing polymers 0.1% to 10% %, 0.1% to 3% of chelating agent, 0.1% to 10% of surfactant, 0.001% to 2% of corrosion inhibitor, 0.1% to 20% of oxidant, and less than or equal to 90% of deionized water.

[0027] Each raw material is selected within its weight range, and the total weight is 100%.

[0028] The preparation method is to add the abrasive into the agitator, add deionized water and other raw materials according to the mass percentage under stirring and stir evenly, use KOH or HNO 3 Adjust the pH value to 1.0-7.0, continue stirring until uniform, and let stand for 30 minutes.

[0029] The abrasive particles are SiO 2 、Al 2 o 3 or CeO 2 The hydrosol particles; the particle size of the abrasive particles is 20-150nm, and the...

Embodiment 2

[0040] Raw materials and weight percentages are as follows:

[0041] The abrasive particles are SiO with a particle size of 60nm 2 Hydrosol particles 2%;

[0042] The nitrogen-containing polymer is 2% of polyethyleneimine with a molecular weight of 800-1,000,000;

[0043] The chelating agent is 0.5% ethylenediaminetetraacetic acid;

[0044] Surfactant is ammonium lauryl sulfate 3%;

[0045] The corrosion inhibitor is benzotriazole (BTA) 0.01%;

[0046] The oxidizing agent is hydrogen peroxide (H 2 o 2 )2.49%;

[0047] Deionized water 90%.

[0048] Prepare polishing liquid and carry out polishing experiment according to embodiment 1, surface roughness R a = 14nm.

Embodiment 3

[0050] Raw materials and weight percentages are as follows:

[0051] The abrasive particles are Al with a particle size of 30nm 2 o 3 Hydrosol particles 5%;

[0052] The nitrogen-containing polymer is 2% of polyethyleneimine with a molecular weight of 800-1,000,000;

[0053] The chelating agent is 0.5% of diethylenetriaminepentaacetic acid;

[0054]Surfactant is polyoxyethylene polyoxypropylene ether block polyether (pluronic) 2%;

[0055] The corrosion inhibitor is benzotriazole (BTA) 0.01%;

[0056] The oxidizing agent is 5% ammonium persulfate;

[0057] Deionized water 85.49%.

[0058] Prepare polishing liquid and carry out polishing experiment according to embodiment 1, surface roughness R a = 8nm.

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Abstract

The invention discloses a polishing solution for reducing the copper chemical mechanical polishing roughness. The polishing solution is formed by the following components by mass weight: 0.1%-30% of abrasive particles, 0.1%-10% of nitrogen-contained polymers, 0.1%-3% of chelating agents, 0.1%-10% of surfactants, 0.001%-2% of corrosion inhibitors, 0.1%-20% of oxidant and less than or equal to 90% of de-ionized water. The components are firstly mixed, and then pH of the mixture is adjusted to 1.0-7.0 by KOH or HNO3. The polishing solution shows small damage on the copper chemical mechanical polishing, reduces the surface roughness (8-18nm) of the polished copper, and increases the surface smoothness; and cleaning is easier after polishing.

Description

Technical field: [0001] The invention relates to a copper chemical mechanical polishing liquid, in particular to a polishing liquid which is easy to clean after polishing and can reduce the roughness of copper chemical mechanical polishing. Background technique: [0002] With the development of Ultra Large Scale Integration (ULSI), chip integration continues to increase, and circuit components are becoming more and more dense. Chip interconnection has gradually become a key factor affecting chip manufacturing. Chip interconnection plays an important role in the operation of the chip, such as transmitting logic signals, transmitting power, and distributing clock signals for timing control and synchronous operations. The high integration of the chip leads to the increase of interconnection lines and the reduction of cross-sectional area. If the traditional aluminum interconnection method of ULSI is still used, it will lead to increased resistance and parasitic capacitance due ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/04
Inventor 侯军吕冬王晓风程宝君吴聪
Owner DALIAN SANDAAOKE CHEM
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