The present application relates to the technical field of
crystalline silicon solar cell manufacturing, and particularly relates to a low-damage
laser patterning method of a thermal-
oxygen protective layer, comprising the following steps: providing a
crystalline silicon wafer treated by texturing, growing a thermal-
oxygen silicon oxide layer on the surface of the textured surface, and depositing an
amorphous silicon layer on the surface of the thermal-
oxygen silicon oxide layer; using a
laser to locally pattern the
amorphous silicon layer, so that the
amorphous silicon layer in the
processing area is subjected to film opening or oxidation modification; using HF
etching liquid to selectively etch the
crystalline silicon wafer after
laser processing; performing selective removal treatment on the crystalline
silicon wafer after HF
etching, removing only the amorphous silicon layer in the unprocessed area, and completely retaining the thermal-oxygen
silicon oxide layer in the unprocessed area; using the thermal-oxygen
silicon oxide and amorphous silicon double-layer protection to realize low-damage
laser patterning, greatly reducing silicon wafer lattice damage, eliminating surface
height difference, avoiding additional
thinning of the silicon wafer, being compatible with mainstream battery routes, and effectively improving battery efficiency and
mass production yield.