8results about How to "Improve surface flatness" patented technology

The invention relates to a final polishing method for a wafer and a polished wafer. In the final polishing method for the wafer, the wafer comprises a first to-be-removed layer and a second to-be-removed layer, the first to-be-removed layer and the second to-be-removed layer are adjacent to each other and are made of different materials, and the final polishing method comprises the following steps: performing first polishing on the wafer to remove a part of the first to-be-removed layer; and performing second polishing on the wafer after the first polishing to remove the remaining part of the first to-be-removed layer and the second to-be-removed layer, the material removal rate of the second polishing being smaller than the material removal rate of the first polishing. By means of the final polishing method for the wafer, flatness deterioration of the wafer in the final polishing process stage can be avoided or relieved.

This invention provides a display panel, a method for manufacturing the same, and a display device. The display panel includes a light-emitting device layer and an array substrate. The array substrate includes a substrate layer, an insulating module, a first conductive layer, and a second conductive layer. The insulating module is disposed on the substrate layer. The first conductive layer and the second conductive layer are staggered within the insulating module. The first conductive layer includes a padding layer, the padding layer of which does not coincide with the orthographic projection of the second conductive layer on the substrate layer; or the substrate layer has a first groove on a surface facing the conductive structure, the first groove of which coincides with the orthographic projection of the second conductive layer on the substrate layer.

Provided is a composition containing (A) a compound represented by general formula (1), (B) a compound represented by general formula (2), and (C) a silver compound. (In formula (1), R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1-5 carbon atoms. ) (In formula (2), R3 and R4 each independently represent a hydrogen atom, a sodium atom, a potassium atom, or an alkyl group having 1-5 carbon atoms, and n represents 1 or 2. > # imgabs0 #

The invention relates to a wave-transparent composite material with high surface flatness and low surface roughness and a forming method. The wave-transparent composite material comprises a fiber reinforced resin-based wave-transparent composite material main body layer, an ultrathin fiber cloth reinforced resin-based wave-transparent material transition layer and a thermoplastic film surface layer which are arranged in sequence. The forming method of the wave-transparent composite material comprises the following steps: sequentially laying the fiber reinforced resin prepreg (prepreg A), the ultrathin fiber cloth reinforced resin prepreg (prepreg B) and the thermoplastic polymer film on a mold, and then integrally hot-pressing, curing and forming. The wave-transparent composite material is compact and uniform in surface, high in flatness and low in roughness.

The application relates to a composite laminate for electronic packaging, a pressing device and a pressing method, wherein the composite laminate for electronic packaging comprises a plate body, the plate body comprises opposite first and second side surfaces, and the first and second side surfaces are both configured as arc surfaces protruding towards the outside of the plate body. The composite laminate for electronic packaging can solve the problem that the heat sink produces large deformation in the process of tube-shell assembly, thereby reducing the chip output power and conversion effect.

The invention discloses a polishing wandering star wheel, a double-sided polishing machine and a polishing method.The polishing wandering star wheel comprises an outer side wheel body matched with the double-sided polishing machine so that the polishing wandering star wheel can be integrally positioned, and a plurality of containing holes are formed in the outer side wheel body; the number of the inner side wheel bodies is multiple, the inner side wheel bodies are embedded in the containing holes in a one-to-one mode, clamping openings for containing the base plate to be polished are formed in the inner side wheel bodies, and the inner side wheel bodies rotate relative to the outer side wheel bodies so as to drive the base plate to rotate; and the positioning guide mechanism is arranged between the outer side wheel body and the inner side wheel body, and the positioning guide mechanism is matched with the outer side wheel body and the inner side wheel body to guide the inner side wheel body to rotate relative to the outer side wheel body so as to limit the movement track deviation of the base plate. According to the polishing device, the inner side wheel body can be guided in the polishing process, deviation of the inner side wheel body is avoided, meanwhile, motion friction interference is reduced, and therefore the rotation track of the inner side wheel body is stabilized, the substrate machining deviation is reduced, and the surface flatness of the photomask glass substrate is improved.

The present application relates to the technical field of crystalline silicon solar cell manufacturing, and particularly relates to a low-damage laser patterning method of a thermal-oxygen protective layer, comprising the following steps: providing a crystalline silicon wafer treated by texturing, growing a thermal-oxygen silicon oxide layer on the surface of the textured surface, and depositing an amorphous silicon layer on the surface of the thermal-oxygen silicon oxide layer; using a laser to locally pattern the amorphous silicon layer, so that the amorphous silicon layer in the processing area is subjected to film opening or oxidation modification; using HF etching liquid to selectively etch the crystalline silicon wafer after laser processing; performing selective removal treatment on the crystalline silicon wafer after HF etching, removing only the amorphous silicon layer in the unprocessed area, and completely retaining the thermal-oxygen silicon oxide layer in the unprocessed area; using the thermal-oxygen silicon oxide and amorphous silicon double-layer protection to realize low-damage laser patterning, greatly reducing silicon wafer lattice damage, eliminating surface height difference, avoiding additional thinning of the silicon wafer, being compatible with mainstream battery routes, and effectively improving battery efficiency and mass production yield.

The invention relates to a chemical mechanical polishing solution for polishing a silicon wafer as well as a preparation method and application of the chemical mechanical polishing solution. The chemical mechanical polishing solution comprises a water-soluble small molecule containing a morpholine ring and an amido side chain at the same time. According to the polishing solution, the water-soluble micromolecules containing the morpholine ring and the amino side chain are added into the polishing solution, so that the surface flatness of the silicon wafer is effectively improved on the premise that the polishing rate of the silicon wafer is remarkably increased, the requirement for silicon wafer planarization in production is met, and the processing efficiency of the silicon wafer is ensured.