Polishing method for lithium tantalate substrate
A lithium tantalate and substrate technology, which is applied in the field of semiconductor materials, can solve the problems of poor roughness and flatness, deterioration of polishing quality, non-uniform wear of polishing, etc., to achieve small roughness, improve the quality of filter components, and reduce processing. cost effect
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Embodiment 1
[0027] a) Grind the cut lithium tantalate wafer with an abrasive with a particle size of 6um so that the roughness of the lithium tantalate wafer is less than 300nm and the flatness is less than 10um, and then ultrasonically cleaned to obtain a lithium tantalate grinding surface with a rough structure piece;
[0028] b) The lithium tantalate grinding piece is directly chemically etched in a closed container containing a mixed acid of nitric acid and hydrofluoric acid, the etching temperature is 25°C, and the etching time is 4 hours, so that the roughness of the lithium tantalate wafer is <200nm, The flatness is less than 5um, and ultrasonic cleaning is performed to obtain lithium tantalate corrosion sheets with random and disordered pit structures on the surface;
[0029] c) Polish the lithium tantalate wafer on one side with a single polishing machine and polishing liquid, the polishing pressure is 0.25MPa, and the polishing temperature is 30°C, so that the roughness of the l...
Embodiment 2
[0031] a) Grind the cut lithium tantalate wafer with an abrasive with a particle size of 6um so that the roughness of the lithium tantalate wafer is less than 300nm and the flatness is less than 10um, and then ultrasonically cleaned to obtain a lithium tantalate grinding surface with a rough structure piece;
[0032] b) The lithium tantalate grinding piece is directly chemically etched in a closed container containing a mixed acid of nitric acid and hydrofluoric acid, the etching temperature is 25°C, and the etching time is 8 hours, so that the roughness of the lithium tantalate wafer is <200nm, The flatness is less than 5um, and ultrasonic cleaning is performed to obtain lithium tantalate corrosion sheets with random and disordered pit structures on the surface;
[0033] c) Polish the lithium tantalate wafer on one side with a single polishing machine and polishing solution, the polishing pressure is 0.50MPa, and the polishing temperature is 30°C, so that the roughness of the...
Embodiment 3
[0035] a) Grind the cut lithium tantalate wafer with an abrasive with a particle size of 6um so that the roughness of the lithium tantalate wafer is less than 300nm and the flatness is less than 10um, and then ultrasonically cleaned to obtain a lithium tantalate grinding surface with a rough structure piece;
[0036] b) The lithium tantalate grinding piece is directly chemically etched in a closed container containing a mixed acid of nitric acid and hydrofluoric acid, the etching temperature is 25°C, and the etching time is 8 hours, so that the roughness of the lithium tantalate wafer is <200nm, The flatness is less than 5um, and ultrasonic cleaning is performed to obtain lithium tantalate corrosion sheets with random and disordered pit structures on the surface;
[0037] c) Polish the lithium tantalate wafer on one side with a single polishing machine and polishing liquid, the polishing pressure is 0.75MPa, and the polishing temperature is 30°C, so that the roughness of the l...
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