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Photosensitive polysiloxane composition and uses thereof

a polysiloxane composition and polysiloxane technology, applied in the field of photosensitive polysiloxane composition and thin film and device, can solve the problems that the low tapered angle of a pattern of photosensitive composition cannot be accepted in this field, and the surface flatness of the surface is not good, so as to achieve good transparency

Inactive Publication Date: 2015-01-29
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a photosensitive polysiloxane composition with good transparency, surface flatness, and tapered angle of a pattern. This is achieved by a specific polysiloxane and alkali-soluble resin with a silyl group.

Problems solved by technology

Although the photosensitive composition has high solubility in a weak alkaline developer, the poor flatness of the surface and low tapered angle of a pattern of the photosensitive composition can not be accepted in this field.

Method used

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  • Photosensitive polysiloxane composition and uses thereof
  • Photosensitive polysiloxane composition and uses thereof
  • Photosensitive polysiloxane composition and uses thereof

Examples

Experimental program
Comparison scheme
Effect test

synthesis example

Synthesis of Polysiloxane (A-1)

[0163]Following adding 0.30 mole of methyl trimethoxy silane (MTMS), 0.65 mole of phenyltrimethoxysilane (hereinafter referred to as PTMS), 0.05 mole of 3-(triethoxysilyl) propyl succinic anhydride (hereinafter referred to as GF-20) and 200 g of propylene glycol monoethyl ether (hereinafter referred to PGEE) into a 500 ml three-necked flask, an aqueous oxalic acid solution (0.40 g oxalic acid / 75 g water) was added at room temperature with stirring within 30 minutes. Next, the flask was immersed at 30° C. in oil bath and stirred for 30 minutes. Then, within 30 minutes, the temperature of the oil bath was raised to 120° C. After the solution temperature was dropped to 105° C., heating was resumed with stirring for polymerization for 6 hours. Then again, the solvent was removed using distillation to obtain the polysiloxane (A-1). The kinds and used amounts of the raw materials of the polysiloxane (A-1) are shown in Table 1.

Synthesis of Polysiloxane (A-2) ...

example 1

[0167]One-hundred parts by weight of the used amount of the polysiloxane (A-1), 2 parts by weight of the ortho-naphthoquinone diazide sulfonic acid ester (B−1) formed from 1-[1-(4-hydroxyphenyl)propyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene and ortho-naphthoquinone diazide-5-sulfonic acid (B−1), and 0.5 parts by weight of alkali-soluble resin containing the silyl group (C-1) were mixed and dissolved in 100 parts by weight of the propylene glycol monomethyl ether acetate (D−1) completely, so as to form the photosensitive polysiloxane composition of Example 1.

—Formation of Thin Film on Glass—

[0168]Various photosensitive polysiloxane compositions were spin coated independently on a prime glass substrate of 100×100×0.7 mm in size, and then pre-baked for 2 minutes at 100° C. to obtain a pre-baked coating film of about 2 μm in thickness. And then, the pre-baked coating film was placed under the light mask with a given pattern, and ultraviolet light of 140 mJ / cm2 was used to irradiate th...

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Abstract

The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D).

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a photosensitive polysiloxane composition and a thin film and device formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate in a liquid crystal display element or organic light-emitting display device, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. More particularly, the invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern after exposing and developing.[0003]2. Description of the Related Art[0004]In recent years, in the field of the semiconductor industry, liquid crystal displays (LCDs) and organic electro-luminescence displays (OELDs), with the size reduction, the demand of the miniaturization of the pattern(s) in the photolithography process is increased. Generally, the miniaturized p...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/022G03F7/075
CPCG03F7/0226G03F7/0755G03F7/0757G03F7/0233G03F7/038G03F7/0758G03F7/162G03F7/2002G03F7/327G03F7/40
Inventor HUANG, WEI-JIESHIH, CHUN-AN
Owner CHI MEI CORP
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