Low-loss oriented cutting method of large-size sapphire crystal blanks

A technology of sapphire crystal and cutting method, which is applied in the field of low-loss directional cutting of large-size sapphire crystal blanks, which can solve the problems of poor cutting surface quality and flatness, poor flatness of sapphire crystal, and high brittleness of sapphire material, etc., and achieve cutting surface Good quality, short follow-up processing time, and the effect of improving material utilization

Inactive Publication Date: 2011-08-17
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When processing large-sized sapphire crystal blanks with the above two cutting methods, the cut surface quality and flatness are relatively poor
Moreover, due to the high brittleness of the sapphire material, large chipping will occur when the saw blade is about to cut the crystal material
Therefore, although the thickness of the band saw blade is relatively thin, the actual loss of cutting large-sized sapphire crystal blanks is relatively large due to reasons such as poor flatness and large chipping of the sapphire crystal after cutting.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment one: the specific technological process of this embodiment is as follows:

[0021] (1) Use a black marker pen to mark the cutting position on the sapphire blank with a diameter of 100mm ground on both ends, and then use an X-ray crystal orientation instrument to orient the end surface of the blank. The crystal orientation deviation is 0.5°, according to The crystal direction deviation of the end face is to select an angled steel plate with an angle of 0.5° between the upper and lower sides, and use beeswax to bond one end face of the sapphire blank to the surface of the angled steel plate, and then fix the angled steel plate on the workbench of the diamond band sawing machine, adjust the position so that the sapphire The geometric center of the blank coincides with the center of the rotary table;

[0022] (2) Open the coolant valve to cool the sapphire blank; use a diamond band saw blade with a particle size of 100#, a steel substrate width of 40mm, a length ...

Embodiment 2

[0024] Embodiment two: the specific technological process of this embodiment is as follows:

[0025] (1) Use a black marker pen to mark the cutting position on the sapphire blank with a diameter of 300mm ground on both ends, and then use an X-ray crystal orientation instrument to orient the end surface of the blank. The crystal orientation deviation is 2°, according to The crystal direction deviation of the end face is to select an angled steel plate with an angle of 2° between the upper and lower sides, and use beeswax to bond one end face of the sapphire blank to the surface of the angled steel plate, and then fix the angled steel plate on the workbench of the diamond band saw, adjust the position so that the sapphire The geometric center of the blank coincides with the center of the rotary table;

[0026] (2) Open the coolant valve to cool the sapphire blank; use a diamond band saw blade with a particle size of 80#, a steel substrate width of 50 mm, a length of 4 m, and a d...

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Abstract

The invention provides a low-loss directional cutting method of large-size sapphire crystal blanks. The large sapphire crystal blanks are fed in a rotation manner in the method, and the processing efficiency of the method is improved by one time than that of a traditional band-saw cutting method. Before cutting, the end faces of the large-size sapphire crystal blanks are oriented, steel plates in corresponding angles are selected according to the crystal orientation deviation of the end faces for bonding, thereby the accurate orientation is finished in a cutting procedure. The method is greatly improved on the basis of the traditional band-saw cutting method, has the advantages of higher cutting efficiency, better cutting surface quality, high surface flatness, shorter follow-up processing time, lower unit production cost and the like, and can be used for correcting the crystal orientation of the end faces of the large sapphire crystal blanks.

Description

[0001] (1) Technical field [0002] The invention relates to a sapphire crystal cutting method, in particular to a low-loss directional cutting method for a large-sized sapphire crystal blank with a diameter greater than 100mm. (2) Background technology [0003] Sapphire single crystal has excellent optical properties, mechanical properties, chemical stability, high temperature performance and electrical properties, so it is widely used in many fields such as optoelectronic information, aerospace, national defense and semiconductor lighting. [0004] Due to the high hardness and high brittleness of the sapphire material, it is extremely difficult to machine it, especially for cutting large-sized sapphire blanks with a size greater than 100mm. [0005] At present, the cutting methods of large-size sapphire single crystal blanks include outer circle cutting method, inner circle cutting method, band saw cutting method, diamond wire cutting method, etc. The outer circle cutting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
Inventor 左洪波杨鑫宏
Owner HARBIN AURORA OPTOELECTRONICS TECH
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