Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rare-earth-containing glass material and substrate and device comprising such substrate

A glass material and glass substrate technology, applied in the field of glass substrate devices, can solve problems such as high strain point glass and high melting temperature

Active Publication Date: 2011-05-18
CORNING INC
View PDF7 Cites 38 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the challenge with this approach is how to fabricate high strain point glasses in a cost-effective manner, as high strain point glasses typically require higher melting temperatures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare-earth-containing glass material and substrate and device comprising such substrate
  • Rare-earth-containing glass material and substrate and device comprising such substrate
  • Rare-earth-containing glass material and substrate and device comprising such substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0174] Tables I-V list examples of glasses expressed in mole percent calculated on an oxide basis of the glass batch. Tables I-V also list various physical properties of these glasses, along with the units for these properties. Examples 1-56 are actual glass compositions melted in crucibles and the properties of these compositions were measured. Hypothetical Examples 57-59 with predictive properties are listed in Table V. The inventors believe that, based on their accumulated experience, the predicted properties should approximate their true measured properties.

[0175] Since the sum of the individual components is at or near 100, for all practical purposes the reported values ​​are considered to represent mole percents. The actual batch components may contain any materials, or oxides or other compounds, which when melted together with other batch components will convert to the desired oxides in the proper proportions. For example, SrCO 3 and CaCO 3 The sources of SrO an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A rare-earth-containing glass material has a composition, expressed in mole percentages on an oxide basis, comprising: SiO2 : 66-75 Al2O3 : 11-17 B2O3 : 0-4 MgO : 1-6.5 CaO : 2-7 SrO : 0-4 BaO : 0-4 Y2O3 : 0-4 La2O3 : 0-4 Y2O3+La2O3 : 0.1-4. The inclusion Of Y2O3 and / or La2O3 in the composition reduces the T2.3 of the glass thereby allowing higher annealing-point glasses to be produced. The glass is particularly useful for low-temperature polycrystalline silicon-based semiconductor devices.

Description

[0001] Cross References to Related Applications [0002] This application claims the U.S. patent application titled "RARE-EARTH-CONTAINING GLASS MATERIAL AND SUB STRATE AND DEVICE COMPRISING SUCH SUBSTRATE," filed May 13, 2008 The priority of Provisional Patent Application Serial No. 61 / 052772 is based on the content of this document and is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to glass materials, glass substrates comprising such glass materials, and devices comprising such glass substrates. In particular, the present invention relates to a glass material containing a rare earth element, a high-precision glass substrate, and a device including a glass substrate having a semiconductor material layer such as a polysilicon layer. The invention can be used, for example, in the manufacture of glass substrates for LCD displays, especially those based on polysilicon technology. Background technique [0004] The m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C3/095
CPCC03C3/095C03C17/06
Inventor P·S·丹尼尔森M·J·德杰纳卡A·J·埃利森T·J·基克辛斯基
Owner CORNING INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products