70results about How to "Characteristic impact" patented technology

The invention provides an array substrate and a preparation method thereof, and belongs to the technical field of display. By means of the array substrate, the problem can be solved that as the feature of an existing thin film transistor is influenced by the light of an organic light emitting diode, reverse display of a black screen is caused. The array substrate comprises a substrate, the substrate is divided into multiple subpixels in different colors, each subpixel comprises a driving region, a capacitance region and a light emitting region, and at least one thin film transistor is arrangedin each driving region; organic light emitting diodes are arranged in each light emitting region, a first color film structure corresponding to the color of the subpixel where each light emitting region is located is arranged below the organic light emitting diodes, a second color film structure is arranged below the thin film transistors, and the second color film structure and the first color film structure in at least one color are arranged in the same layer.

The invention discloses a low temperature poly-silicon back plate, a fabrication method thereof and a light-emitting device. The low temperature poly-silicon back plate comprises a substrate, a thin film transistor and a light blocking layer, wherein the thin film transistor and the light blocking layer are arranged above the substrate, and the light blocking layer is arranged above the thin film transistor and used for blocking incoming light from irradiating to the thin film transistor. In the technical scheme provided by the invention, the low temperature poly-silicon back plate comprises the thin film transistor and the light blocking layer, the light blocking layer is arranged above the thin film transistor and can be used for blocking the incoming light from irradiating to the thin film transistor, the influence of the incoming light to the characteristic of the thin film transistor is avoided, and thus, the stability of the thin film transistor is improved.

Provided is a method and apparatus for producing nickel powder with which in the case of melting and vaporizing nickel raw material charged into a crucible with plasma to obtain the nickel powder, the deterioration in the characteristic of electronic parts can be prevented. The nickel in the crucible 2 set in a plasma reaction furnace 1, is melted and vaporized and cooled to obtain the nickel powder with a grain collecting device 12. At least a portion in contact with the nickel on the surface layer in the crucible 2 or the whole body, is covered with a coating layer. In the coating layer, a material composed of a component used for the electronic parts using the nickel powder for electrode or the material composed mainly of this component, is used. Further, the whole crucible is manufactured with the material composed of the component used for electronic parts using the nickel powder for electrode of the material composed mainly of the component. The inner wall or the whole body in the reaction furnace 1 uses the above material, too.

The invention discloses a measurement specimen and a measurement method for an interface characteristic of an embedded rib reinforced concrete beam. The specimen comprises a combined reinforced rib, wherein a through groove is formed in the center of the section of the combined reinforced rib in the axial direction; strain gauges are uniformly distributed on the inner wall of the through groove along the axial direction of the through groove. The method comprises the following steps that the combined reinforced rib is embedded into the concrete beam, and according to the conventional four-point bending static load test, an automatic static strain acquisition instrument records data epsilon f of the strain gauges and the cracking load Pcr, the yield load Py and the ultimate load Pu of the beam in real time; according to the strain data measured actually, the shearing strength of an interface of the combined reinforced rib or a CFRP rib with a glue agent is obtained by calculation; the Pu theory value is obtained by calculating according to the calculating method of the concrete reinforcing strength in the concrete reinforcing theory. By comparing the errors of the Pu theory value with the Pu, the result shows that the specimen can be used for improving the measurement precision of parameters of the interface characteristic of the reinforced concrete beam, and the strain measurement is convenient and easy.

The invention relates to a method and a device for actively controlling thrust pulse of a boat propeller. The method and the device are characterized in that an axial thrust or axial vibration measuring system arranged on a boat propeller shaft system is used to measure the pulse of axial thrust of the boat propeller or the size of axial vibration of the propeller shaft system; according to the pulse of axial thrust of the boat propeller or the size of axial vibration of the propeller shaft system, a thrust pulse controller works out the size of controlling force which needs to be exerted on the boat propeller shaft system and is used for removing thrust pulse; a signal of the thrust pulse controller is amplified through a power amplifier; and the needed axial controlling force is generated on the boat propeller shaft system through a noncontact type electromagnetic force actuator arranged on the boat propeller shaft system so as to control and compensate the thrust pulse of the boat propeller, thereby achieving the aim of reducing the influence of the thrust pulse of the boat propeller on boat vibration.

The invention discloses a preparation method of an integrally-formed inductor, and the integrally-formed inductor. The preparation method comprises the following steps: A, spraying the partial or allareas of a coil and a conducting wire frame with a coating agent solvent; B, curing the sprayed coil and the conducting wire frame; C, putting the coil and the conducting wire frame into magnetic powder, and packaging to form an integrally formed inductor semi-finished product; and D, carrying out baking and pin bending treatment on the packaged semi-finished product to form the integrally-formedinductor. According to the invention, part or all of the areas of the coil and the conducting wire frame are sprayed, and then the coil and the conducting wire frame are put into the magnetic powder to be packaged to form the integrally formed inductor, so that an enameled film on the outer layer of the coil can be prevented from being punctured by the magnetic powder during packaging (such as diecasting), and the short circuit of the inductor is avoided.

The invention discloses an ultrasound-assisted method and an ultrasound-assisted device used for extracting nano-particles from nano-powder organic solvent suspension liquid. Based on the special effects of ultrasound in the process for extracting nano-particles from the nano-powder organic solvent suspension liquid, nano-particle extraction and separation effects can be improved. The special effects of ultrasound include a thermochemical effect, a cavitation effect, a mechanical stirring effect and an ultrasonic standing wave effect.

The invention discloses a method for realizing electrostatic prevention at a radio-frequency port. A wire is connected between a microstrip line of the radio-frequency port and the ground, the width of the wire is 0.2-1 mm, and the length is in a way of a quarter-wave line connected in parallel to the microstrip line. The invention effectively inhibits the static signal input to the radio-frequency port, thereby realizing the function of electrostatic prevention at a radio-frequency module port. The invention has the advantages of simple circuit, small size, low cost, simple method, easy realization and high effectiveness.

The invention discloses a packaging method of a chip of a phase change memory. The method comprises: a chip that needs to be packaged is fixed in a packaging shell; an ultrasonic bonding technology is utilized to enable electrodes of the chip and pins of the shell to be connected one by one; and then, a shielding cover is used to enable the chip to be isolated from the outside world. According to the invention, because ultrasonic bonding does not need a critical bonding temperature, packaging on a chip can be carried out at a normal temperature, so that there is no influence on a characteristic of the chip itself of the phase change memory. When bonding is carried out, no current is added and no fusing is carried out; there is no effect on physical and mechanical performances of materials; no compound is formed to influence the performance of the chip; the cleanness of the chip can be maintained; and packaging can be directly carried out without tedious cleaning processing, so that testing demands of good stability, high precision and good repeatability can be met.

Embodiments of the invention provide a thin film transistor, a manufacturing method thereof, an array substrate, and a display device, and relates to the field of electronic devices. The thin film transistor is capable of reducing probability that metal atoms in a second metal layer in a source electrode and/or a drain electrode diffuse to a channel region. The thin film transistor comprises: an active layer disposed on the substrate; and a source electrode and a drain electrode in contact with the active layer; wherein the source electrode and the drain electrode comprise a first metal layerand a second metal layer arranged in a stacked manner, and the first metal layer is adjacent to the active layer relative to the second metal layer. Area of an overlapping area of orthographic projection of the second metal layer in the source electrode and the active layer on the substrate is smaller than area of an overlapping area of orthographic projection of the first metal layer and the active layer in the source electrode on the substrate; and/or area of an overlapping area of orthographic projection of the second metal layer and the active layer in the drain electrode on the substrateis smaller than area of an overlapping area of orthographic projection of the first metal layer in the drain electrode and the active layer on the substrate.

When winding a wire around the magnetic teeth of a stator core, it is possible to use the conventional technique which spreads the stator core for winding the wire. However, in the case pf two-pole stator, the winding space has a large curvature and it is difficult to perform a sufficient winding. The present invention enables a user to perform a sufficient amount of winding with a high density even in a winding space of a large curvature. Hinge portions (13e) are arranged on the magnetic pole teeth (11) so as to spread pole arcs (11a) toward outer circumference, so that winding is performed in the state that the winding spaces (S) at the both sides of the magnetic pole teeth (11) are positioned in series on a single straight line.

Provided is an optical device wherein a gap is formed between an optical waveguide path and a substrate without disposing a depression, etc., upon the substrate, and whereon stress is not applied to an optical element even if heat is received from a heater for temperature adjustment. An optical device comprises: a substrate; an optical element further comprising an optical waveguide path which is formed on a surface which faces the substrate; a bonding part which is formed on the substrate to be located sandwiching the optical waveguide path; a heater which is formed on at least either the optical element or the substrate to heat the optical waveguide path; and a micro-bump structure which is configured from a metallic material. The bonding part and the optical element are bonded across the micro-bump structure such that a gap is formed between the optical waveguide path and the substrate.

The invention relates to a method for removing sulfur from petroleum cokes by manganese powder, and belongs to the technical field of metallurgy, carbon materials and metallurgy energy conservation and emission reduction. The method includes the following steps: firstly, crushing the petroleum cokes containing 2.0 wt%-6.4 wt% of sulfur to a particle size of 0.080-0.25 millimetre, adding the manganese powder with the particle size below 200 mesh into the crushed petroleum cokes to be mixed evenly, heating the mixture to 500-900 DEG C, feeding ethanol vapor or mixed gas formed by ethanol vapor and air for reaction for 40-120 minutes, and obtaining desulphurized petroleum cokes and manganese powder particles containing sulfur by screening after the reaction. The reaction is carried out underanoxic conditions, and does not cause burning loss to the petroleum cokes.

The invention discloses a flexible direct-current short-circuit fault protection method based on a thyristor chain and superconducting current limiters. A converter used in a flexible direct-current power transmission system is a modularized multi-level converter cascaded based on half-bridge sub-modules and is of an A-B-C three-phase structure, and each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm consists of a plurality of half-bridge sub-modules and a bridge arm inductor; an alternating current side output port of the modular multilevel converter is connected in parallel with the thyristor chain; the three-phase lines of the AC side of the modular multilevel converter are each connected in series with a superconducting current limiter; the upper ends of the three-phase upper bridge arms of the modular multilevel converter are connected to a direct current side through a first mechanical switch after being short-circuited, and the lower ends of the three-phase lower bridge arms are connected to the direct current side through a second mechanical switch after being short-circuited. According to the protection method, alternating-current and direct-current side current isolation under a fault condition is achieved by turning on the thyristor chain, the direct-current side fault current is reduced to zero, the alternating-current side fault current is limited through the superconducting current limiters, and therefore direct-current short-circuit fault protection of the flexible direct-current power transmission system is achieved.

The invention relates to a preparation method of Chinese herbal ointment. The method comprises the following steps: distilling to extract and purify distilled calendula flower water with high concentration, mixing tamanu oil and sweet almond oil in a mass ratio of 1:5 after melting an emulsifier and adding into the emulsifier, then adding the distilled calendula flower water, mixing and sufficiently stirring for 3-5 minutes at a constant temperature of 60 DEG C-70 DEG C, and then cooling to obtain the Chinese herbal ointment. The Chinese herbal ointment disclosed by the invention can fuse water and greases very well to sufficiently bring a most powerful effect of the medicines into play, and is convenient to carry and coat; moreover, effects of the component medicines are combined very well, so that various effects are not affected.

The invention provides an array substrate and a preparation method thereof. The array substrate comprises a substrate, switching thin film transistors arranged on the substrate in an array manner, anda photosensitive thin film transistor arranged on the substrate, wherein the switching thin film transistors and the photosensitive thin film transistor are arranged on the same layer at an interval;the switching thin film transistor comprises a first semiconductor layer and a shading layer which are positioned on the substrate; and the photosensitive thin film transistor includes a second semiconductor layer on the substrate. According to the invention, the shading layer, the first semiconductor layer and the second semiconductor layer are prepared by adopting the same photomask manufacturing process, so that the manufacturing process of the array substrate is reduced, the production cost of the prior art is reduced, and the productivity effect is improved; and meanwhile, the shading layer above the first semiconductor layer is reserved, so that the influence of illumination on the characteristics of the switching thin film transistor is avoided while the characteristics of the switching thin film transistor are ensured.