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Low temperature poly-silicon back plate, fabrication method thereof and light-emitting device

A low-temperature polysilicon and backplane technology, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as increasing divergence, reducing TFT stability, and affecting TFT characteristics, so as to improve stability. Effect

Active Publication Date: 2015-11-25
BOE TECH GRP CO LTD
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Problems solved by technology

However, a large amount of exposure will cause the threshold voltage Vth of the thin film transistor (ThinFilmTransistor, referred to as: TFT) to be positively biased and the divergence of the Vth result will increase.
[0004] In summary, the UV light used in the exposure of the PLN layer affects the characteristics of the TFT, thereby reducing the stability of the TFT.

Method used

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  • Low temperature poly-silicon back plate, fabrication method thereof and light-emitting device
  • Low temperature poly-silicon back plate, fabrication method thereof and light-emitting device
  • Low temperature poly-silicon back plate, fabrication method thereof and light-emitting device

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Embodiment Construction

[0039] In order for those skilled in the art to better understand the technical solutions of the present invention, the low-temperature polysilicon backplane, its manufacturing method, and light-emitting devices provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0040] figure 1 A schematic structural diagram of an LTPS backplane provided in Embodiment 1 of the present invention, as shown in figure 1 As shown, the LTPS backplane includes: a base substrate 11 , a thin film transistor 12 and a light blocking layer 13 located above the base substrate 11 , and the light blocking layer 13 is located above the thin film transistor 12 . The light blocking layer 13 is used to block the irradiation light from being irradiated to the thin film transistor 12 .

[0041] In this embodiment, the irradiation light is ultraviolet light, which may be ultraviolet light used in the exposure process or ultraviolet light in the enviro...

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Abstract

The invention discloses a low temperature poly-silicon back plate, a fabrication method thereof and a light-emitting device. The low temperature poly-silicon back plate comprises a substrate, a thin film transistor and a light blocking layer, wherein the thin film transistor and the light blocking layer are arranged above the substrate, and the light blocking layer is arranged above the thin film transistor and used for blocking incoming light from irradiating to the thin film transistor. In the technical scheme provided by the invention, the low temperature poly-silicon back plate comprises the thin film transistor and the light blocking layer, the light blocking layer is arranged above the thin film transistor and can be used for blocking the incoming light from irradiating to the thin film transistor, the influence of the incoming light to the characteristic of the thin film transistor is avoided, and thus, the stability of the thin film transistor is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon backplane, a manufacturing method thereof, and a light-emitting device. Background technique [0002] Low Temperature Poly-silicon (LTPS for short) technology has been more and more widely used due to its advantages of ultra-thin, light weight and low power consumption. [0003] A planarization (Polarization, PLN) layer is provided in the structure of the LTPS backplane. Since the PLN layer uses a thicker organic material, a large amount of exposure is usually required to prevent residues during the formation of the PLN layer. Removed organic material is removed cleanly. However, a large amount of exposure will cause the threshold voltage Vth of a thin film transistor (ThinFilm Transistor, TFT for short) to be positively biased and the divergence of the Vth result to increase. [0004] To sum up, the ultraviolet light used in the exposure of the P...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L23/552H01L21/77
CPCH01L29/78633H01L29/78675H01L29/66757H01L27/1248H10K59/124H10K59/126H01L27/12H10K59/00H01L21/77H01L23/552
Inventor 许晓伟刘利宾李良坚龙春平
Owner BOE TECH GRP CO LTD
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