Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Array substrate and preparation method thereof

An array substrate and substrate technology, applied in the field of array substrate and its preparation, can solve the problems of high production cost, long cycle, cumbersome preparation method steps, etc., and achieve the effects of improving production capacity, reducing production cost and reducing production process

Inactive Publication Date: 2021-03-23
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present application provides an array substrate and a preparation method thereof, which are used to solve technical problems such as cumbersome preparation steps, high production cost and long cycle in the existing array substrate preparation process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate and preparation method thereof
  • Array substrate and preparation method thereof
  • Array substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] see figure 1 , a schematic diagram of the process flow of the array substrate provided in the embodiment of the present application.

[0052] In this embodiment, the preparation method of the array substrate includes:

[0053] Step S10: forming a first metal layer on the substrate 10, and patterning the first metal layer to form first electrodes 21 and second electrodes 22 arranged at intervals, such as Figure 2A shown.

[0054]In this embodiment, the step S10 includes the following steps:

[0055] Step S11: providing a substrate 10, the substrate 10 includes but not limited to a glass substrate and a flexible substrate.

[0056] Further, in this embodiment, the substrate 10 is a flexible and transparent PI substrate, mainly polyimide, and the PI material can effectively improve light transmittance.

[0057] Step S12: Depositing a first metal layer on the substrate 10, the material of the first metal layer includes but not limited to metals such as aluminum, molybd...

Embodiment 2

[0094] see image 3 , a schematic structural diagram of the array substrate provided in the embodiment of the present application.

[0095] In this embodiment, the array substrate includes a substrate 10; a switch thin film transistor 100, the switch thin film transistor 100 is arranged in an array on the substrate 10, and the switch thin film transistor 100 includes a stacked first electrode 21 and a The first semiconductor layer 401; the photosensitive thin film transistor 200, the photosensitive thin film transistor 200 is arranged on the substrate 10, the photosensitive thin film transistor 200 includes the second electrode 22 and the second semiconductor layer 402 arranged in a stack; wherein, the photosensitive thin film transistor 200 The switching thin film transistor 100 is spaced apart from the photosensitive thin film transistor 200 , and the switching thin film transistor 100 further includes a light shielding layer 50 located above the first semiconductor layer. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an array substrate and a preparation method thereof. The array substrate comprises a substrate, switching thin film transistors arranged on the substrate in an array manner, anda photosensitive thin film transistor arranged on the substrate, wherein the switching thin film transistors and the photosensitive thin film transistor are arranged on the same layer at an interval;the switching thin film transistor comprises a first semiconductor layer and a shading layer which are positioned on the substrate; and the photosensitive thin film transistor includes a second semiconductor layer on the substrate. According to the invention, the shading layer, the first semiconductor layer and the second semiconductor layer are prepared by adopting the same photomask manufacturing process, so that the manufacturing process of the array substrate is reduced, the production cost of the prior art is reduced, and the productivity effect is improved; and meanwhile, the shading layer above the first semiconductor layer is reserved, so that the influence of illumination on the characteristics of the switching thin film transistor is avoided while the characteristics of the switching thin film transistor are ensured.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] In the field of display technology, driving thin film transistors and sensor thin film transistors are widely used. Sensor thin film transistors require low subthreshold swing, low off-state current density and high electron mobility. In the prior art, indium gallium zinc oxide is usually used The structure of IGZO and indium zinc oxide (IZO) is used as the semiconductor layer of the thin film transistor to meet the above requirements. [0003] At present, in the in-cell-touch screen, there is a design in which the driving thin film transistor and the sensor thin film transistor are fabricated in the same panel, which requires that the driving thin film transistor should be taken into account when manufacturing. The switching characteristics of the sensor and the photosensitivity of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1225H01L27/1259H01L27/1288
Inventor 翟玉浩
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com