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Packaging method of chip of phase change memory

A phase-change memory and packaging method technology, which is applied in the field of phase-change memory chip packaging, can solve problems such as immature chip packaging technology, achieve the effect of improving welding speed and yield, and maintaining cleanliness

Active Publication Date: 2012-05-09
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the chip packaging technology for soft material electrodes is very mature, but the chip packaging technology for electrodes made of hard materials such as TiW, W, and GeWN is not mature enough.
With the application of phase change memory materials more and more widely, there will be more and more hard material electrodes. With the development of science and technology, the size of phase change memory chips will inevitably become smaller and smaller, and the electrodes will become more and more In order to test its electrical characteristics conveniently, it must be properly packaged. Due to the temperature sensitivity of phase change memory materials and the particularity of electrode materials, conventional packaging technology will inevitably affect the electrical properties of phase change memory chips. There is very big influence, in order to overcome above difficulty, just need to invent a kind of packing technology that is specially used in phase-change memory chip, and this is just the starting point of the present invention

Method used

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  • Packaging method of chip of phase change memory
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  • Packaging method of chip of phase change memory

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with drawings and embodiments.

[0019] The packaging method of the phase-change memory chip of the present invention is specifically as follows: firstly, the chip to be packaged is fixed in the packaging tube shell, and then the electrodes of the chip are connected to the pins of the tube shell one by one by ultrasonic bonding technology, and finally the shielding cover is used Isolate it from the outside world.

[0020] The specific implementation method of using ultrasonic bonding technology to connect the electrodes of the chip and the pins of the shell one by one is: using a rivet to lead the metal wire to the surface of the electrode of the chip, and driving the rivet to exert pressure on the electrodes through ultrasonic vibration, driving The metal wire rubs against the electrode surface, and the metal wire and the electrode surface produce plastic deformation, and at the same time, the oxide f...

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Abstract

The invention discloses a packaging method of a chip of a phase change memory. The method comprises: a chip that needs to be packaged is fixed in a packaging shell; an ultrasonic bonding technology is utilized to enable electrodes of the chip and pins of the shell to be connected one by one; and then, a shielding cover is used to enable the chip to be isolated from the outside world. According to the invention, because ultrasonic bonding does not need a critical bonding temperature, packaging on a chip can be carried out at a normal temperature, so that there is no influence on a characteristic of the chip itself of the phase change memory. When bonding is carried out, no current is added and no fusing is carried out; there is no effect on physical and mechanical performances of materials; no compound is formed to influence the performance of the chip; the cleanness of the chip can be maintained; and packaging can be directly carried out without tedious cleaning processing, so that testing demands of good stability, high precision and good repeatability can be met.

Description

technical field [0001] The invention belongs to the field of integrated circuit packaging, and in particular relates to a packaging method for a phase-change memory chip. Background technique [0002] There are many materials used to make electrodes, such as Cu, Al, Au, TiW, W, GeWN, etc. Due to the special properties of phase change memory, that is, relatively high requirements for heating element resistance, thermal diffusion and heat generation efficiency, materials such as Cu, Al, and Au are soft materials and easy to diffuse, so they are not suitable for electrodes of phase change memory; on the contrary, TiW, W, GeWN and other electrodes are hard materials, they have suitable resistance, good thermal stability, do not react with phase change materials, and have good bonding force with phase change materials, so they are currently used for phase change memory The main materials of the electrodes are TiW, W, GeWN, etc. At present, the chip packaging technology for soft...

Claims

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Application Information

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IPC IPC(8): H01L21/607H01L45/00
CPCH01L2224/45124H01L2224/78313H01L24/78H01L2224/4847H01L2224/49171H01L2924/3025H01L2224/45015H01L2924/14H01L2924/10161H01L2224/78H01L2224/7801H01L2924/00H01L2924/00012
Inventor 缪向水李震陈伟瞿力文
Owner HUAZHONG UNIV OF SCI & TECH
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