Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Microstructure for detecting mechanical properties of one-dimensional nanometer materials

A nano-material and micro-structure technology, applied in the field of micro-mechanical technology and nano-material science, can solve the problems that the load of the sample and the deformation of the sample cannot be measured separately at the same time, the calculation error is large, and the implementation cost is high, so as to achieve intuitive measurement and reduce the impact , to ensure the effect of accuracy

Inactive Publication Date: 2012-07-18
XIDIAN UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most qualitative, direct measurement methods cannot simultaneously and independently measure the load acting on the sample and the sample deformation
Although the above-mentioned problems can be overcome in the measurement method using electrostatic drive or thermal drive, it has the disadvantages of high implementation cost, large calculation error, etc., and it is easy to affect the sample itself

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microstructure for detecting mechanical properties of one-dimensional nanometer materials
  • Microstructure for detecting mechanical properties of one-dimensional nanometer materials
  • Microstructure for detecting mechanical properties of one-dimensional nanometer materials

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0039] The preparation process of the present invention will be further described with reference to FIG. 3 below.

[0040] 3(a), 01 is the device layer, the material is polysilicon, and the thickness is about 10μm; 02 is the sacrificial layer, and the material is silicon oxide; 03 is the silicon substrate; 04 is the protective layer; 05 is the primary photoresist; 06 is Secondary photoresist.

[0041] 3(b), a layer of photoresist 05 is coated on the surface of the device layer.

[0042] 3(c), the photoresist is etched to form a micromechanical structure pattern.

[0043] 3(d), the device layer is etched to form a micromechanical structure.

[0044] Referring to Figure 3(e), the photoresist is removed.

[0045] 3(f), a photoresist 06 is coated on the surface of the etched device layer and the protective layer.

[0046] Referring to FIG. 3(g), the photoresist of the etching protection layer is etched, and the size is the size of the observation window.

[0047] Referring to FIG. 3(h), the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
stiffnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a microstructure for detecting mechanical properties of a one-dimensional nanometer material. The microstructure comprises a frame-shaped bracket, wherein two symmetrically arranged upper platforms are connected on the frame-shaped bracket by at least four symmetrical upper vertical beams; the measured nanometer material is fixed between the two upper platforms; two ends of each of the two upper platforms are respectively supported on a supporting seat of the frame-shaped bracket by a lower supporting beam; a lower platform is connected below the two upper platforms by at least four symmetrical oblique beams; and the lower platform is used for applying an external load. The preparation material of the microstructure is polycrystalline silicon, the preparation process of the microstructure is compatible with the existing silicon micromachining process, and the microstructure can be prepared in batches. The load on the one-dimensional nanometer material and the deformation situation of the nanometer material under an effect of the load can be obtained at the same time, and the properties of the nanometer material are not influenced in a detection process.

Description

Technical field [0001] The invention relates to the fields of micromechanical technology and nanomaterial science, specifically a micromechanical structure, used to detect the tensile and compressive mechanical properties of one-dimensional nanomaterials, and is suitable for detecting the Young’s model of one-dimensional nanomaterials. Weight, tensile strength, breaking strength, etc. Background technique [0002] One-dimensional nanomaterials, such as nanotubes, nanowires, and nanobelts, are low-dimensional nanostructured materials with excellent physical properties, and are expected to have a wide range of applications in the fields of nanoelectromechanical systems, gas sensors, nanoelectronics and optoelectronic devices in the future prospect. However, as the size of the material decreases, when it is reduced to nanometers, the size effect, surface effect and quantum effect and other related effects become prominent, making some physical properties of nanomaterials very diffe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00G01N3/02
Inventor 王卫东易成龙郝跃牛翔宇纪翔
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com