72 results about "Silicon micromachining" patented technology

A thermal infrared sensor is provided in a housing with optics and a chip with thermoelements on a membrane. The membrane spans a frame-shaped support body that is a good heat conductor, and the support body has vertical or approximately vertical walls. The thermopile sensor structure consists of a few long thermoelements per sensor cell. The thermoelements being arranged on connecting webs that connect together hot contacts on an absorber layer to cold contacts of the thermoelements. The membrane is suspended by one or more connecting webs and has, on both sides of the long thermoelements, narrow slits that separate the connecting webs from both the central region and also the support body. At least the central region is covered by the absorber layer.

The invention relates to the making of a micro flow centrifugal chip. It comprises the chip base and cover plate, the base composed of a bended and continuous extending micro slot channel, with the curvature radius ranging 20-1000 micron, at least one inlet at the center of the micro slot channel, at least two outlets at the tail of the micro slot channel. It has a micro slot channel with micro curvature radius spinal, generating clutch acceleration speed to realize the centrifugal operation. It applies to micro processing, being able to realize excellent centrifugal effect, low in cost, and quick.

A system for nano-imprint with mold deformation detector is disclosed for real-time monitoring of the deformation of the mold. An electrostatic plate capacitor is embedded in the mold, serving as the deformation detector. The capacitor includes two opposite metal film electrodes formed by silicon micromachining technique on opposite surfaces of the mold and connected by a metal lead. During imprinting, the mold is acted upon by an external force and deformation occurs, which induces change of distance between the metal film electrodes and thus variation of the capacitance of the capacitor. The amount of deformation of the mold can then be assessed by comparing the capacitance with a reference. Thus, real-time detection and monitoring of the deformation of the nano-imprint mold is realized. Also disclosed is a method for carrying out the real-time monitoring of the deformation of the mold.

A capacitive micromachined ultrasonic transducer (cMUT) device, includes: a cMUT obtained by processing a silicon substrate by using a silicon micromachining technique; and an oscillator circuit having the cMUT as a capacitor, and outputting a frequency modulation signal by modulating a frequency of an oscillation signal to be output on the basis of a change of capacitance of the cMUT.

The invention relates to a metal-silicon composite cantilever beam typed micron-electronic mechanical system probing card and a preparation method thereof; an ultraviolet thick film photolithography and bulk silicon micro-processing composite process is adopted to prepare a metal-silicon composite cantilever beam probing card structure, thus replacing an existing probing card structure consisting of single silicon or metal. The ultraviolet thick film photolithography process is used for preparing the metal probe with high depth / width ratio and metal circuit transmission wires below the probes, and the bulk silicon micro-processing composite process is used to prepare the silicon cantilever beam structure. The force during the testing process is commonly borne by the silicon cantilever beam and the metal circuit above the silicon cantilever beam; the electric and mechanical property of the probing card structure is controlled by adjusting the geometrical parameters of the metal circuit leads and the silicon cantilever beam; the probes above the probing card can be arranged by the positions of the pins of the chip to be tested; the probe tips are corresponding to the position of the pins of the chip one by one. The end of the metal circuit transmission wire leads the circuit to be connected on the back surface by a through hole electro-plating or wire punching type on a silicon substrate and leads the circuits to be connected onto printing circuit boards and test machine platforms further.

The present invention relates generally to micromachining. More particularly, the present invention relates to a method for combining directional ion etching and anisotropic wet etching and devices and structures fabricated thereby. The present invention is particularly applicable to silicon micromachining and provides architectures that combine crystallographic surfaces and vertical dry etched surfaces together in the same structure.

The invention provides a micro machining method for bulk silicon for forming a cavity structure of an MEMS (micro-electromechanical systems) thermopile detector. The method comprises the following steps of: providing a silicon substrate, growing a silica membrane on the silicon substrate in a thermal oxidation manner, and forming a thermopile area and an infrared absorption area on the silica membrane. A thermal nodal area is arranged at one end of the thermopile area, close to the infrared absorption area, and a cold nodal area is arranged at the other end of the thermopile area, far away from the infrared absorption area. A silicon nitride and silica compound membrane structure is deposited on a thermopile structure layer, and a corrosion opening is formed in a compound membrane through photoetching. A release channel of the thermopile structure is formed by the corrosion opening. Through the release channel, a superficial layer on the surface of the bulk silicon is corroded by using an isotropy corrosion method so as to form a thin cavity of the superficial layer of the bulk silicon, and a bulk silicon deep layer below the thin cavity is corroded by using an anisotropy corrosion method so as to form a regular smooth ladder-shaped cavity structure, and therefore, the cavity structure in the bulk silicon is finally formed. The cavity structure formed by using the method has a regular and smooth inner surface and is good in structure symmetry.

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

The invention provides a novel silicon substrate isotropic wet etching process. The process includes forming two sacrificial layers on the surfaces of silicon substrates by adding negative 450-CP photo-resists, forming graphs needed to be machined through a surface micromachining photolithography technique, and using isotropic etching to obtain two-dimensional machined graphs with small depth-to-width ratios. According to the silicon substrate isotropic wet etching process, a certain quantity of acetic acids and water are added in a corrosion system selecting reasonable proportioning to serve as buffer agents to stabilize corrosion rates, and a corrosion solution is placed in an ice water mixture to control the reaction temperature to obtain a silicon corrosion system with an optimum corrosion rate, depth-to-width ratio and surface quality.

The invention discloses a method for constructing a metal-based surface with alternate hydrophilic and hydrophobic strips in the technical field of non-silicon micromachining and micronano functionalmaterial preparation. The method comprises the steps that a metal wire is tightly wound on a substrate, the wire and the substrate are integrally sintered under the pressure of weight, after the obtained sintered body is immersed in a hydrophobic nanoparticle turbid liquid, hydrophobic nanoparticles are deposited on the area, not covered by the metal wire, of the substrate, and the superhydrophobic strips are formed after high-temperature film hardening; the metal wire is peeled off from the substrate, and the exposed area forms the hydrophilic strips. The spacing and width of the strips of the constructed metal-based surface with the alternate hydrophilic and hydrophobic strips can be adjusted by adjusting the diameter of the metal wire and the pressure of the weight respectively; the method is simple and easy in operation, and has broad application prospects.

The design and manufacture method of a silicon mass flow sensor made with silicon micromachining (a.k.a. MEMS, Micro Electro Mechanical Systems) process for applications of gas flow measurement with highly humidified or liquid vapors is disclosed in the present invention. The said silicon mass flow sensor operates with an embedded heater and an adjacent control temperature sensor beneath the integrated calorimetric and thermal dissipative sensing thermistors. When the condensation takes place at the surface of the said silicon mass flow sensor, the embedded heater shall be turned on to elevate the temperature of the supporting membrane or substrate for the sensing thermistors. The elevated temperature shall be adjusted to above the vaporization temperature with the feedback data of the adjacent temperature sensor such that the surface condensation due to the presence of the liquid vapors in a gas flow can be effectively eliminated.