72 results about "Silicon micromachining" patented technology

A system for nano-imprint with mold deformation detector is disclosed for real-time monitoring of the deformation of the mold. An electrostatic plate capacitor is embedded in the mold, serving as the deformation detector. The capacitor includes two opposite metal film electrodes formed by silicon micromachining technique on opposite surfaces of the mold and connected by a metal lead. During imprinting, the mold is acted upon by an external force and deformation occurs, which induces change of distance between the metal film electrodes and thus variation of the capacitance of the capacitor. The amount of deformation of the mold can then be assessed by comparing the capacitance with a reference. Thus, real-time detection and monitoring of the deformation of the nano-imprint mold is realized. Also disclosed is a method for carrying out the real-time monitoring of the deformation of the mold.

A capacitive micromachined ultrasonic transducer (cMUT) device, includes: a cMUT obtained by processing a silicon substrate by using a silicon micromachining technique; and an oscillator circuit having the cMUT as a capacitor, and outputting a frequency modulation signal by modulating a frequency of an oscillation signal to be output on the basis of a change of capacitance of the cMUT.

The present invention relates generally to micromachining. More particularly, the present invention relates to a method for combining directional ion etching and anisotropic wet etching and devices and structures fabricated thereby. The present invention is particularly applicable to silicon micromachining and provides architectures that combine crystallographic surfaces and vertical dry etched surfaces together in the same structure.

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.