78 results about "Silicon cantilever" patented technology

Disclosed is a three-dimensional micro-force silicon micro-sensor, which comprises a glass substrate 1, four single end-clamped silicon cantilever beams 4 vertical to one another are arranged on the glass substrate 1, the cantilever beams 4 support a middle mass hanging block 5, a nano-indenter 3 is arranged on the mass hanging block 5, a piezoresistive strip 2 is disposed on the four cantilever beams 4 respectively, and the four piezoresistive strips 2 are designed into a Wheatstone bridge. The sensor integrates stress sensitivity and force-power conversion detection into one body, and has advantages of high sensitivity, good dynamic response, high precision and easy miniaturization and integration.

The invention discloses a silicon micro-acceleration sensor chip, which comprises a central silicon mass block which is positioned in the center of a peripheral support silicon substrate; two silicon films are arranged at two ends of one side of the front of the peripheral support silicon substrate adjacent to the central silicon mass block; one surface of one silicon film and one surface of the other silicon film are connected with the peripheral support silicon substrate and the central silicon mass block, while the other surfaces are connected with a silicon cantilever; the middle of the silicon cantilever is provided with four piezoresistive strips so as to form a Wheatstone bridge; when acceleration is acted on the sensor chip, inertia force is acted on the central mass block to deform the cantilever-film structure, the resistance of the piezoresistive strips is changed under the stress action of the silicon cantilever, the Wheatstone bridge loses balance and outputs an electric signal corresponding to the external acceleration so as to measure the acceleration by the sensor chip. The silicon micro-acceleration sensor chip has the advantages of small volume, light weight, high frequency response and high sensitivity.

The invention relates to an MEMS micro-lens driven by three piezoelectric cantilever beams and a manufacturing method thereof and belongs to the technical field of piezoelectric MEMS appliance designs and integrated manufacturing. The MEMS micro-lens comprises a micro-reflecting mirror surface, the piezoelectric cantilever beams and arched bent elastic narrow beams, wherein each of the piezoelectric cantilever beams is formed by fixing a PZT driving membrane with more than 2 mu m thickness on the surface of a silicon cantilever beam; the three piezoelectric cantilever beams are connected with the micro-lens micro-reflecting mirror surface through three arched bent elastic narrow beams respectively; and the piezoelectric cantilever beams are distributed in a way that an included angle of 120 degrees is formed between every two piezoelectric cantilever beams. The manufacturing method comprises the following steps of: firstly, preparing a piezoelectric thick membrane on a substrate and etching piezoelectric cantilever beam patterns on the piezoelectric thick membrane; secondly, preparing a Au / Cr two-layer metal top electrode and a micro micro-reflecting mirror surface pattern on the PZT piezoelectric thick membrane; and finally, etching a Si substrate on the front and back faces so as to form the MEMS micro-lens driven by the three piezoelectric cantilever beams. The MEMS micro-lens has the advantages of many deflecting directions, strong driving force of the PZT thick membrane and low optical loss. The manufacturing process is compatible with the MEMS process, so that the MEMS micro-lens has the potential of mass production and can be widely applied in the field of optical communication.

The invention discloses a piezoelectric-triboelectric combined MEMS wideband-energy harvester and a preparation method thereof. The harvester comprises a main structure of a piezoelectric energy harvester, a stop block and a gasket, wherein the main structure of the piezoelectric energy harvester comprises a fixed silicon base, silicon-based piezoelectric cantilever beams and masses; the fixed silicon base comprises a silicon layer and silicon dioxide layers at two sides of the silicon layer; the silicon-based piezoelectric cantilever beam comprises a silicon cantilever beam supporting layer and a piezoelectric thick film layer arranged on the silicon cantilever beam supporting layer; the silicon cantilever beam supporting layer comprises a silicon layer, silicon dioxide layers and a supporting layer electrode layer; the piezoelectric thick film layer comprises a piezoelectric thick film and a piezoelectric thick film electrode layer arranged on the surface of the piezoelectric thick film; each mass comprises an integrated silicon mass and a frictional layer arranged on the surface of the integrated silicon mass; the stop block comprises a frictional layer base, an electrode layer and a frictional layer; and the gasket is located between the fixed silicon base and the stop block. By using the piezoelectric-triboelectric combined MEMS wideband-energy harvester, a transduction element can obtain relatively high output power in a low-frequency vibration environment, so that the problems of low output power, narrow frequency band and the like of the traditional MEMS piezoelectric energy harvester are solved.

The invention relates to a metal-silicon composite cantilever beam typed micron-electronic mechanical system probing card and a preparation method thereof; an ultraviolet thick film photolithography and bulk silicon micro-processing composite process is adopted to prepare a metal-silicon composite cantilever beam probing card structure, thus replacing an existing probing card structure consisting of single silicon or metal. The ultraviolet thick film photolithography process is used for preparing the metal probe with high depth / width ratio and metal circuit transmission wires below the probes, and the bulk silicon micro-processing composite process is used to prepare the silicon cantilever beam structure. The force during the testing process is commonly borne by the silicon cantilever beam and the metal circuit above the silicon cantilever beam; the electric and mechanical property of the probing card structure is controlled by adjusting the geometrical parameters of the metal circuit leads and the silicon cantilever beam; the probes above the probing card can be arranged by the positions of the pins of the chip to be tested; the probe tips are corresponding to the position of the pins of the chip one by one. The end of the metal circuit transmission wire leads the circuit to be connected on the back surface by a through hole electro-plating or wire punching type on a silicon substrate and leads the circuits to be connected onto printing circuit boards and test machine platforms further.

The invention provides a structure and a method for testing Young modulus of a thin film silicon material on an insulating substrate. The structure comprises two groups of structures, wherein the first group of structures consists of a polycrystalline silicon cantilever beam (101), a thin film silicon cantilever beam (103) and a cushion plate (102) made from polycrystalline silicon; the second group of structures consists of a polycrystalline silicon cantilever beam and a cushion plate made from the polycrystalline silicon. According to the structure, units for actually testing the Young modulus of thin film silicon are the thin film silicon cantilever beams, the only difference of the two groups of structures is whether the thin film silicon cantilever beam exists, and corresponding structures and geometric dimensions of other units in the two groups of structures are completely the same. According to the method, by applying an electrostatic force, the polycrystalline silicon cantilever beams are bent downwards to press the thin film silicon cantilever beam and the cushion plates to contact with the substrate; by testing with the two groups of test structures, a force for independently driving the thin film silicon cantilever beam to be bent to reach test deflection is extracted, and the Young modulus of the thin film silicon material on the insulating substrate can be calculated by virtue of the force, the test deflection and the geometric dimensions.

Thin and short cantilevers possess both a low force constant and a high resonance frequency, thus are highly desirable for atomic force microscope (AFM) imaging and force measurement. According to some embodiments, the invention provides small silicon (Si) cantilevers integrated with a Si tip, for example fabricated from SOI wafers that are used for reducing the variation of thickness of the cantilevers. In one example, the fabrication process provided SOI chips containing 40 silicon cantilevers integrating with an ultra-sharp Si tip. The resolution of images obtained with these tips was much higher than those obtained with the commercial tips, while the force constants were much less, that is, more suitable for imaging soft samples. The availability of such SOI chips greatly facilitates large scale modification of the surfaces of the silicon cantilever tips with a monolayer of oligo(ethylene glycol) derivatives that resist the non-specific interactions with proteins, rendering them most suitable for imaging and measurement of biological samples.

The invention is a microfabricated silicon cantilever with a stiffness appropriate to resolve forces of interest in working with micro objects. Stiffnesses may range from about 10 piconewtons per micron of deflection, to about 1 millinewton per micron of deflection. There is a set of micro weights of appropriate masses that is used to calibrate the force gages. The weights are captive to a ring on a handle so that they are free to move, but will not get lost.

The invention relates to a cantilever beam structure and a manufacturing method manufactured by taking silicon anisotropic corrosion as a key technology, and belongs to the field of micro-electronic mechanical systems. It is characterized in that the section of the cantilever beam is pentagonal, the upper surface of the cantilever beam is a single crystal silicon (100) crystal plane, and the lower surface of the cantilever beam is composed of two (111) crystal planes. The cantilever beam structure is produced by anisotropic etching, and the (111) surface is used as the etching termination surface to automatically terminate the corrosion of the silicon cantilever beam. The cantilever beam structure can be precisely controlled, which greatly improves the manufacturing yield of the cantilever beam. The invention can be applied to the structures of various MEMS devices, such as capacitive acceleration sensors, resistive acceleration sensors, micromechanical gyroscopes, resonators, etc., which can greatly improve the control level of the device manufacturing process and improve the yield of device manufacturing.

The invention relates to a force sensitive component used in microelectromechanical system that includes silicon substrate, pin, flexural sandwich structure soft magnetic multilayer force sensitive component and silicon cantilever. The pin is leading from the copper layer of the two ends of the force sensitive component and is set on the silicon cantilever with silicon dioxide layer. The flexural sandwich structure soft magnetic multiplayer force sensitive component is located on the silicon cantilever that connects to the silicon substrate. The invention has the advantage of high sensitivity and fast response speed. The membrane material could be compatible to most large integrated circuit and is easy to manufacture. The SI effect of the multilayer membrane and sensitivity of the force sensitive component are sharply increased. It could realize the detecting for acceleration, pressure, and libration, and filtering, tuning, surging as well.

Embodiments provide a switching device. The switching device includes a substrate, which includes a contact region. The switching device further includes a vertical layer arrangement extending from the substrate next to the contact region. The vertical layer arrangement includes a control layer. The switching device further includes a freestanding silicon cantilever extending vertically from the contact region.