The invention relates to a cantilever beam structure and a manufacturing method manufactured by taking silicon anisotropic corrosion as a key technology, and belongs to the field of micro-electronic mechanical systems. It is characterized in that the section of the cantilever beam is pentagonal, the upper surface of the cantilever beam is a single crystal silicon (100) crystal plane, and the lower surface of the cantilever beam is composed of two (111) crystal planes. The cantilever beam structure is produced by anisotropic etching, and the (111) surface is used as the etching termination surface to automatically terminate the corrosion of the silicon cantilever beam. The cantilever beam structure can be precisely controlled, which greatly improves the manufacturing yield of the cantilever beam. The invention can be applied to the structures of various MEMS devices, such as capacitive acceleration sensors, resistive acceleration sensors, micromechanical gyroscopes, resonators, etc., which can greatly improve the control level of the device manufacturing process and improve the yield of device manufacturing.