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Cantilever trace detection sensor and preparation method thereof

A detection sensor and cantilever beam technology, applied in the field of cantilever beam trace detection sensors and their preparation, can solve the problems of cantilever beam sensitivity limitation and the like

Active Publication Date: 2011-06-01
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, from the perspective of cantilever beam materials, materials with small Young’s modulus are selected to prepare cantilever beams, such as silicon dioxide, which greatly limits the improvement of cantilever beam sensitivity.

Method used

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  • Cantilever trace detection sensor and preparation method thereof
  • Cantilever trace detection sensor and preparation method thereof
  • Cantilever trace detection sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0102] Example 1. Metal-silicon Schottky diode-embedded cantilever beams diffused by heavy metals prepared by using KOH solution to corrode the back cavity

[0103] figure 2 It is a flow chart for the preparation of the cantilever beam sensor of the present invention, and the specific steps are as follows:

[0104] 1) On the silicon device layer of the SOI sheet, use the magnetron sputtering method (atmospheric pressure is 1mTorr, current density is 10mA / cm 2 , the power density is 20W / cm 2 ) to prepare a layer of gold metal layer with a thickness of 8nm (such as figure 2 a), then utilize the high temperature diffusion method (the temperature is 350 ℃, the time is 30min) to make the metal in the metal layer diffuse into the silicon device layer, use 4g KI, 1g I 2 and 40mL H 2 The etching solution composed of O corrodes the remaining metal on the surface of the silicon device layer;

[0105] In this step, the SOI sheet is supported by a silicon device layer with a thickn...

Embodiment 2

[0120] Example 2. Fabrication of metal-silicon Schottky diode-embedded cantilever beams diffused by heavy metals using ICP dry etching back cavity process

[0121] image 3 It is a flow chart for the preparation of the cantilever beam sensor of the present invention, and the specific steps are as follows:

[0122] 1) On the silicon device layer of the SOI sheet, use the magnetron sputtering method (atmospheric pressure is 1mTorr, current density is 10mA / cm 2 , the power density is 20W / cm 2 ) to prepare a layer of gold metal layer with a thickness of 8nm (such as image 3 a), then utilize the high temperature diffusion method (the temperature is 350 ℃, the time is 30min) to make the metal in the metal layer diffuse into the silicon device layer, use 4g KI, 1g I 2 and 40mL H 2 The etching solution composed of O corrodes the remaining metal on the surface of the silicon device layer;

[0123] Wherein, the SOI sheet is composed of a silicon device layer with a thickness of 1....

Embodiment 3

[0138] Example 3. Using the KOH solution to etch the back cavity process to prepare a metal-silicon Schottky diode embedded cantilever beam and irradiate it with gamma rays

[0139] Figure 4 It is a flow chart for the preparation of the cantilever beam sensor of the present invention, and the specific steps are as follows:

[0140] 1) On SOI slices (such as Figure 4 a) The silicon dioxide layer B with a thickness of 100nm is prepared by wet oxygen oxidation (oxidation temperature: 900°C) on both the front and back sides of the silicon device layer, and then patterned, using the silicon dioxide layer B as a mask Etch the silicon device layer until the silicon dioxide layer is exposed (eg Figure 4 b), then corrode the silicon dioxide layer B as a mask with an etching solution composed of hydrofluoric acid and ammonium fluoride with a volume ratio of 1:4 (such as Figure 4 c);

[0141] Wherein, the SOI sheet is composed of a silicon device layer with a thickness of 1.5 μm,...

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Abstract

The invention discloses a cantilever trace detection sensor and a preparation method thereof. A metal-silicon Schottky diode subjected to heavy metal diffusion or gamma ray irradiation treatment is embedded into the surface of an appropriate position of a silicon cantilever and is used for converting mechanical signal into electrical signals. A thin precious metal layer is deposited on one surface of the cantilever, and a monomolecular sensitive layer with specific absorptive capacity grows on the metal layer by a self-assembly method. The surface stress difference is produced on upper and lower surfaces of the cantilever when a detected chemical substance is combined with molecules of the sensitive layer to cause the cantilever to be bent, so that the concentrated bending stress is produced at the root of the cantilever; and the stress is detected by the Schottky diode embedded into the surface of the cantilever. The sensor has the advantages of simple structure, simple and convenient manufacturing, high sensitivity and high resolution, can be applied to force sensors, scanning probes and the like, and has important application in the fields such as environmental detection, food safety, military aerospace and the like.

Description

technical field [0001] The invention relates to a cantilever beam micro-detection sensor and a preparation method thereof. Background technique [0002] The micro-cantilever beam structure is the simplest microelectromechanical system (MEMS) device, which is simple in structure and easy to mass-produce. Recently, sensors based on cantilever beam structures have been widely used in the fields of chemical and biological detection. At present, the signal readout methods of the cantilever beam mainly include optical method and piezoresistive method. The optical readout method has the advantages of high sensitivity and simple device structure, but the optical readout method generally requires very expensive equipment and is difficult to debug, and it is difficult to realize array testing due to the problem of optical path debugging. The piezoresistive readout method has the advantages of simple device structure, direct electrical output, etc., is convenient to use, and is easy ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00
Inventor 王建吴文刚郝一龙王阳元
Owner PEKING UNIV
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