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6 results about "Gamma ray irradiation" patented technology

Co60 Gamma Ray Irradiation. The Radiation Science and Engineering Center has two gamma-ray irradiation facilities, which provide flexibility for research and industry projects. The Center has a pool irradiator with movable sources that can be configured to suit the researcher.

Depth filter medium

This invention provides an improved depth filtration medium with reduced extractant for DSP filtration and clarification applications. Furthermore, it provides an improved depth filtration medium that is compatible with gamma irradiation-based filter sterilization processes. [Solution] A depth filtration medium is provided for clarifying the recovered material from a feed stream of a cell culture containing therapeutic biomolecules. The depth filtration medium is composed of a sintered mixture of a polymer adsorbent and a thermoplastic binder, has extremely low extractability, and does not require pre-washing before use. Furthermore, the constituent materials used in the sintered depth filter medium exhibit high stability to gamma rays and are compatible with gamma-based pre-use sterilization processes.
Owner:MERCK PATENT GMBH

Method for degrading resistant genes in penicillin fermentation residue

PendingCN122298783ABiotechnologyResistant genes
This application provides a method for degrading antibiotic resistance genes in penicillin fermentation residue, comprising: Step S1, providing penicillin fermentation residue to be treated. The penicillin fermentation residue contains at least one target antibiotic resistance gene. Step S2, subjecting the penicillin fermentation residue to gamma ray irradiation treatment. This application addresses the problems of low removal rate of antibiotic resistance genes (ARGs), easy rebound, high treatment cost, and high risk of secondary pollution in existing penicillin fermentation residue treatment technologies by subjecting the penicillin fermentation residue to gamma ray irradiation treatment.
Owner:TSINGHUA UNIVERSITY

A device for simulating a mixed field of microgravity, irradiation and temperature for extraterrestrial bodies and a method of using the same

PendingCN122409399AStarwispGamma ray
A friction device and its application method for simulating a hybrid field of microgravity, radiation, and temperature on an extraterrestrial body can meet the demand for simulating material damage under extreme conditions in the cosmic environment (high radiation, extreme temperature, and extreme gravity). This invention uses high-permeability magnetic materials, a vacuum pump, and a gamma radiation source to simulate the cosmic environment. Traditional "stretching suspension" methods are designed for medium or large spacecraft and robotic arms, but cannot balance the partial gravity on small particles by stretching and suspending them. This device overcomes the gravity of small molecular particles by constructing Maxwell coil pairs to achieve a gradient magnetic field, improving the reliability of the simulated environment. Simultaneously, this invention can simulate the extremely cold or hot climate conditions, vacuum conditions, and high-energy gamma-ray radiation conditions of the lunar surface. Furthermore, it can be used to conduct wear tests on high-performance aerospace materials under hypergravity or weightlessness conditions caused by Martian dust and interstellar dust.
Owner:HARBIN INST OF TECH

A method for preparing high-performance oxygen evolution electrocatalysts based on gamma-ray irradiation

This invention discloses a method for preparing high-performance oxygen evolution electrocatalysts based on gamma-ray irradiation. The method includes pretreating a foamed metal substrate; dissolving at least one of an iron salt, cobalt salt, and nickel salt in ultrapure water to obtain an iron / cobalt / nickel salt solution; in-situ growing an iron / cobalt / nickel catalyst precursor on the pretreated metal foam substrate using a hydrothermal method or a combination of hydrothermal and high-temperature calcination; and irradiating the iron / cobalt / nickel catalyst precursor with gamma rays to obtain the oxygen evolution electrocatalyst. The molar ratio of the iron salt, cobalt salt, and nickel salt is x:y:z, where x, y, and z are independently selected from 0 to 1, and x, y, and z are not simultaneously zero. This invention can successfully synthesize iron-cobalt-nickel-based OER electrocatalysts with excellent activity and stability, thereby accelerating the efficiency of water electrolysis. This preparation method has good versatility and provides a new approach for the preparation of non-precious metal OER catalysts.
Owner:TAIZHOU UNIV

A method for improving the defects of perovskite quantum dots by irradiation

The application discloses an irradiation method for improving defects of perovskite quantum dots, and the method comprises pretreatment, optional low-energy electron irradiation or low-energy proton irradiation or low-dose gamma ray irradiation, and post-treatment: firstly, washing and drying glass embedded with ABX3 type perovskite quantum dots; and then, irradiating the glass by low-energy electrons or low-energy protons or low-dose gamma rays with specific parameters, so as to improve defects and improve performance. The method has strong pertinence, can improve photoluminescence quantum yield of perovskite quantum dots, improves photoelectric conversion efficiency of a solar cell prepared based on the perovskite quantum dots, is suitable for aerospace application scenarios, is simple to operate and can be scaled up, and provides key technical support for application of perovskite solar cells in the field of spaceflight.
Owner:YANGZHOU UNIV

A gamma-ray based semiconductor substrate conditioning method

PendingCN122161353APhysical chemistryGamma ray
The present application relates to a kind of semiconductor substrate regulation method based on gamma ray, belong to semiconductor processing technical field.The method includes: the detection parameter of the semiconductor substrate to be handled is obtained;Based on the detection parameter of semiconductor substrate and target resistivity, determine gamma ray irradiation parameter;The detection parameter of semiconductor substrate and gamma ray irradiation parameter are input to the defect state evaluation model that is constructed in advance, output defect concentration prediction value, and defect concentration prediction value is input to target optimization function and is calculated, determine vacuum annealing process parameter;Target optimization function is associated with target resistivity;Based on gamma ray irradiation parameter control gamma ray radiation source, semiconductor substrate is irradiated;Based on the vacuum annealing process parameter to the semiconductor substrate is carried out vacuum annealing treatment.By this way can significantly improve the precision and process robustness of irradiation and annealing synergic regulation, can improve the precision of regulation (such as resistivity precision and lattice integrity).
Owner:CHENGDU GAOTONG ISOTOPE CO LTD