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250results about How to "Excellent electrical performance" patented technology

Solar battery slice technology for efficient and low-cost film crystal silicon

The present invention is a technique for manufacturing a crystalline silicon solar cell piece, especially a technique for manufacturing a high-efficiency, low cost and thin-sheet solar cell piece, and the invention belongs to the solar energy application field. The technique aims at the thin-sheet crystal silicon chip with thickness less than 200 mu m, by adopting innovated technique and developing the original technique, combines the domestic cell whole equipment which is independently developed, settles the contradiction between the thin sheet and the fraction ratio, finished product rate and the electrical property, and satisfies the request of the cell piece product line to the high efficiency and low cost. The technique for manufacturing crystal silicon solar cell piece is subdivided to seven steps according to the process flow: eliminating the injury and coarsen the surface, diffusing to make a knot, plasma etching for eliminating the edge, PSG eliminating, PECVD depositing Si3N4 film, printing positive back electrode slurry and back field slurry on the silk screen, and co-baking to form an ohm contact. When the technique is adopted for the size 125*125mm<2>, the efficiency of the single crystalline silicon solar cell piece is up to 16.5, and the efficiency of the polycrystalline silicon solar cell is up to 15.0%.
Owner:BEIJING ZHONGKEXIN ELECTRONICS EQUIP

A method for prepare a nitrogen doped carbon nanotube three-dimensional composite material by in-situ growth of a small lay of titanium carbide

The invention belongs to the technical field of preparation of nano-functional materials, in particular to a method for preparing a nitrogen doped carbon nanotube three-dimensional composite materialby in-situ growth of a few layers of titanium carbide, immersing ternary layered Ti3AlC2 ceramic powder in hydrofluoric acid solution, heating and stirring, centrifugally cleaning with ultrapure waterand absolute ethanol, drying to obtain two-dimensional layered titanium carbide nano-powder, adding it into tetramethylammonium hydroxide solution, heating and stirring, centrifuging with deionized water to obtain a few layers of titanium carbide nano-sheet dispersion; Adding cobalt salt into a dispersion of a few layers of titanium carbide nano-sheets for reaction, adding dicyandiamide, heatingand stirring until dicyandiamide is completely dissolved, freezing, and freeze-drying to obtain precursor powder; Nitrogen-doped carbon nanotubes (CNTs) three-dimensional composites were prepared by in-situ growth of a few layers of titanium carbide after grinding the precursor powder and heat treatment. A three-dimensional composite material is prepared by a simple pyrolysis method using a few layers of titanium carbide as a carrier, cobalt as a catalyst, dicyandiamide as a carbon and nitrogen source, and the electrochemical performance of the few layers of titanium carbide can be improved.
Owner:UNIV OF JINAN

High-temperature-resistant moisture-proof mould-proof environment-friendly cable material and preparation method thereof

The invention discloses a high-temperature-resistant moisture-proof mould-proof environment-friendly cable material and a preparation method thereof. The cable material is composed of a mixture A and a mixture B, wherein the mixture A comprises, by weight, 30-40 parts of high-density vinyl resin, 20-30 parts of polyacrylate, 25-35 parts of maleic anhydride grafted poly ethylene, 20-30 parts of methyl vinyl silicon rubber, 1-3 parts of semi-reinforcing carbon black, 40-60 parts of light calcium carbonate, 1-3 parts of N, N'-m-phenylenedimaleimide, 1.5-2.5 parts of aniline-methyl-triethoxysilane, 1-3 parts of calcium stearate, 3-4 parts of antioxidant DSTP and 10-20 parts of mica powder; the mixture B comprises, by weight, 50-70 parts of chlorinated polyethylene, 30-40 parts of poly(styrene-butadiene-styrene), 20-30 parts of ethylene-ethyl acetate copolymer, 0.3-0.5 part of poly(4-methyl-1-pentene), 1-3 parts of antiager TPPD, 2-4 parts of polyethylene wax, 5-10 parts of polycaprolactone, 2-3 parts of sodium dibutyl naphthalene sulfonate, 1-3 parts of superfine polyvinyl alcohol, 2-4 parts of isooctyl thioglycolate dimethyl tin and 10-15 parts of zinc borate. The preparation method is simple, and the cable material has excellent electric performance, good physical mechanical performance and meets requirements of temperature change of different environments.
Owner:TONGLING CITY TONGDOU SPECIAL CABLE CO LTD

Ceramic dielectric material matched with nickel inner electrode and production method of capacitor produced by ceramic dielectric material

The invention discloses a ceramic dielectric material matched with a nickel inner electrode and a production method of a capacitor produced by the ceramic dielectric material. The ceramic dielectric material consists of a main crystal phase, a property-modifying additive and a sintered fluxing agent, wherein the main crystal phase is MgZrxSi(1-x)O3, and x is more than or equal to 0.05 and less than or equal to 0.15; the property-modifying additive is one or more of MnO2, Al2O3, CaO, Bi2O3 and TiO2; and the sintered fluxing agent is one or more of B2O3, SiO2, ZnO, Li2O, K2O and BaO. The ceramic dielectric material can meet the COG characteristic in the EIA standard, has good uniformity, uniform particle size distribution, high dispersibility, good molding technique and excellent dielectricproperty and meets the environmental requirement. When the material is used for making a multi-layer chip ceramic capacitor (MLCC), the material and the nickel electrode can be matched and sintered under the reducing atmosphere, the crystal particles of a ceramic body after sintering can grow uniformly and densely, the dielectric layer can be well matched with the inner electrode, and the productperformance is stable.
Owner:GUANGDONG FENGHUA ADVANCED TECH HLDG

Preparation method of N-type crystalline silicon double-sided back contact solar cell

The invention discloses a preparation method of an N-type crystalline silicon double-sided back contact solar cell, which comprises the following steps of: (1) cleaning and velvet-making; (2) carrying out local phosphorus doping on the back surface of a silicon chip; (3) carrying out boron diffusion on the front surface of the silicon chip; (4) etching a peripheral junction; (5) passivating the front surface and the back surface of the silicon chip or the front surface of the silicon chip; (6) arranging antireflective films on the front surface and the back surface of the silicon chip; (7) forming a hole on the silicon chip; (8) arranging a hole metal electrode in the hole; and printing metal electrodes on the double sides and sintering to obtain the N-type crystalline silicon double-sided back contact solar cell. The preparation method has the advantages that the local phosphorus doping is carried out on the back surface of the silicon chip, a non-phosphorus doping area on the back surface of the silicon chip is a peripheral area of a hole to be formed on the silicon chip, and the problems of short circuit and electricity leakage at the diffused junction are avoided in the solar cell obtained by the preparation method, so that the remarkable effect is obtained.
Owner:CSI CELLS CO LTD +1

Chip separation method for 3D stacked chip encapsulator

The invention discloses a chip separation method for a 3D stacked chip encapsulator. The method comprises the steps that acoustic scanning micro-detection is conducted on the internal structure of a 3D stacked chip encapsulated ULSI sample to determine a region to be ground and the area of the region to be ground; the 3D stacked chip encapsulated ULSI sample is fixed to a grinding table through hot molten wax; grinding is conducted, wherein a grinding drill bit, the grinding intensity and the grinding direction are selected according to the area of the ground region, an encapsulating material and chips are removed, and the region is ground to a protective layer covering the surface of a target chip; a chemical etching method is adopted to remove the protective layer. According to the chip separation method, grinding is used as a main mode, and chemical etching is used as an auxiliary mode; a specific local region is removed through grinding, and the internal structure of the lower chips and bonding wires of the lower chips are not damaged; the protective layer covering the surface of the target chip or chip binder is removed through the chemical etching method, and then the target chip is exposed; the internal structure of the obtained target chip and the bonding wire on the target chip are complete and not damaged, and therefore subsequent electrical logging analysis is facilitated.
Owner:FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH

Preparation method of polyarylene sulfide film

The invention discloses a preparation method of polyarylene sulfide film, characterized by comprising the following steps of: adding 5-100 parts of auxiliaries, 20-80 parts of catalyst, 1-100 parts of alkali and 200-600 parts of organic solvent to a reaction kettle with a nitrogen inlet/outlet pipe, a water separator, a stirrer and a thermometer; adding 130 parts of 60% sodium sulfide, under nitrogen protection, performing dehydration reaction at the temperature of 160-200 DEG C for 0.5-3 hours; cooling to 80-150 DEG C, adding 147-352 parts of aromatic compound polyhalide, reacting at the temperature of 110-250 DEG C for 1-8 hours; keeping at the temperature of 160-320 DEG C for 1-8 hours; filtering the reactant liquor, separating, washing the polymer, drying, purifying with deionized water and acetone, and drying at the temperature of 120 DEG C and the vacuum degree of 0.09MPa for 24 hours to obtain the high molecular weight polyarylene sulfide film-grade resin; preparing the high molecular weight polyarylene sulfide film-grade resin into polyarylene sulfide resin particles by twin screw extrusion granulation; drying the polyarylene sulfide resin particles at the temperature of 100-120 DEG C for 4-10 hours and extruding to form film of 1-3mm in a casting machine; and laterally stretching the film for 2-10 times and then longitudinally stretching the film for 2-10 times in a two-way film stretching machine to prepare the film with even thickness.
Owner:SICHUAN UNIV

Method for molding via hole of printed circuit board

The invention relates to a method for molding a via hole of a printed circuit board, which comprises the steps of: film attachment, in which the surfaces of upper and lower surface copper layers of an insulating dielectric layer drilled with the via hole are attached with photosensitive films, and the positions, which correspond to the via hole, on the photosensitive films are provided with film openings; hole-sealing electroplating, in which an orifice end, which is near a first surface, of the via hole is closed through a copper electroplating process on the first surface of the insulating dielectric layer; hole-filling electroplating, in which the via hole is completely filled with copper, and the filled copper is connected with the surface copper layer of a second surface of the insulating dielectric layer, namely the connection of solid via holes between upper and lower adjacent line layer patterns is realized; and the post-treatment, in which the two surfaces of the insulating dielectric layer are subjected to subsequent treatment respectively, and a level conducting surface which is convenient for implementing subsequent pattern line production working procedures is obtained by removing the photosensitive films, removing the filled copper higher than the surface copper layers, and leveling the board surface. The method has the advantages of simple, convenient and feasible process, low cost, and small area occupation, and upper and lower corresponding line rackets of the hole are integrally preserved, are not damaged by the via hole and have good electrical properties.
Owner:美龙翔微电子科技(深圳)有限公司

Method for preparing superamphiphobic polysulfone membrane for membrane distillation

The invention discloses a simple efficient method for preparing a superamphiphobic polysulfone membrane, and relates to the field of membrane separation. Firstly, a polysulfone membrane having an interpenetrating network pore structure is prepared by a conventional solvent-induced phase inversion manner, and interpenetrating network pores form a 'concave angle structure' on the surface of the membrane; then a stepwise sol-gel process is used to generate, in an in-situ manner, uniformly distributed silica nanoparticles on walls of the interpenetrating network pores to provide a certain nano-scale roughened structure for the polysulfone membrane; and finally, the roughened polysulfone membrane surface is coated with a fluorosilane compound film having low surface energy to obtain the superamphiphobic polysulfone membrane. Dual infiltration resistant functions for water droplets and organic liquid droplets are achieved, the contact angle of a water droplet can be 150 degrees or above, andthe contact angle of n-hexane can reach 65 degrees or above. The prepared superamphiphobic polysulfone membrane when applied in a membrane distillation process has a salt interception rate of 99.5% or above and has high anti-wetting stability.
Owner:QINGDAO UNIV OF SCI & TECH

Spot coating type high-temperature soldering paste and preparation method thereof

The invention belongs to the technical field of soldering paste, and particularly relates to high-temperature soldering paste used for spot coating type operation and a preparation method of the high-temperature soldering paste. The high-temperature soldering paste comprises soldering flux and Sn/Pb/Ag tin-based alloy powders distributed in the soldering flux; the soldering flux includes the following components by weight percentage: 30 to 40 percent of polymerized rosin, 8 to 15 percent of hydrogenated rosin, 2 to 4 percent of modified hydrogenated castor oil, 2 to 4 percent of hydrogenated castor oil wax, 5 to 6 percent of active agent, 1 to 2 percent of hydroquinone, 1 to 2 percent of ethylene bis stearamide, and solvent; and the soldering paste adopts a syringe type package and is prepared through vacuumizing defoaming process and other process. The soldering paste has the advantages of stable performance, uniform spot coating, no phenomena of hardening and layering during the storage, no phenomenon of surface crusting on the surface in contact with air, long storage life and service life, good expansion rate and good insulation resistance; and particularly, residues after reflow soldering at the high temperature above 340 DEG C is unsintered and is easy to clean.
Owner:东莞市特尔佳电子有限公司

Sheet type LTCC miniaturized 3dB directional coupler

ActiveCN103825076AExcellent electrical performanceStable temperature performanceCoupling devicesFrequency bandOhm
The invention discloses a sheet type LTCC miniaturized 3dB directional coupler which is wide in frequency band, small in size, stable in temperature performance, small in insertion loss, balanced in amplitude and good in phase balance characteristics. The sheet type LTCC miniaturized 3dB directional coupler comprises four ports which are printed at the four corners on the bottom surface of a first bottom substrate and are provided with impedance input of 50 ohms, i.e., an input port, a straight-through port, a coupling port and an isolation port. The input port and the straight-through port are connected with a first coupling band-shaped wire on a second substrate through a first asymmetric band-shaped wire and a third asymmetric band-shaped wire which are arranged on the same substrate. The coupling port and the isolation port are connected with a second coupling band-shaped wire on a third substrate through a second asymmetric band-shaped wire and a fourth asymmetric band-shaped wire which are arranged on the other same substrate. The first coupling band-shaped wire and the second band-shaped wire represent rotary-shaped patterns and are coupled in a band-shaped mode at upper wide edges and lower wide edges. According to the invention, the coupling wires represent the rotary-shaped patterns so that quite large coupling wire length can be obtained on a limited substrate area, thus a quite wide frequency scope is obtained. The sheet type LTCC miniaturized 3dB directional coupler has the advantages of simple structure, high yield, good batch consistency and low cost.
Owner:SHENZHEN SUNLORD ELECTRONICS
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