11results about How to "Reduce area occupation" patented technology

The embodiment of the invention discloses a bus timeout monitoring method, device and system based on an AXI protocol, which are applied to the bus timeout monitoring system and comprise at least one AXI host and at least one AXI slave, a plurality of communication channels sharing a watchdog counter are arranged between the AXI host and the AXI slave, and the AXI host and the AXI slave share the watchdog counter. The method comprises the following steps: initiating an access request to a target AXI slave through a target communication channel, and recording request information associated with the access request to a register array in the target communication channel; obtaining a timeout time point corresponding to the access request; if response information of the target AXI slave is not received when the value of the watchdog counter reaches the timeout time point, determining that the access request is timeout; and triggering interruption, and reporting request timeout according to the information recorded by the register array. According to the technical scheme provided by the embodiment of the invention, the overtime problem in AXI transmission can be solved, and the accuracy and the real-time performance of overtime detection are ensured.

The invention relates to the technical field of high-performance computer networks, and discloses a high-performance on-chip cross network structure, which comprises a router group and a small cross line group, the router group comprises an input-stage router, an output-stage router and an intermediate-stage router; the small cross line group comprises cross lines between at least two stages of routers and is used for connecting the routers at all stages; the middle-level router comprises input ports and output ports, the number of the input ports and the number of the output ports are both smaller than or equal to a first threshold value, and the input ports of the middle-level router are connected with the routers of the corresponding number in the upper-level router; each output port of the middle-level router is respectively connected with a corresponding number of routers in the next-level router; the high-performance on-chip cross network structure has at least one connecting line for any pair of input-stage routers and output-stage routers. According to the invention, the problems of overlarge chip area occupation and performance reduction of a cross network structure can be solved.

The embodiment of the invention discloses a memory device, a control method thereof and a memory system, and the memory device comprises a memory array which comprises a plurality of memory planes; the peripheral circuit is coupled with the plurality of storage surfaces and comprises a plurality of first micro control units (MCUs) which are coupled with the plurality of storage surfaces in a one-to-one correspondence manner; and a cache coupled to each of the plurality of first MCUs, wherein each first MCU in the plurality of first MCUs is configured to respond to an operation control signal, acquire an operation parameter from the cache according to a preset access rule, and execute an operation on the storage surface correspondingly coupled with the first MCU according to the operation parameter.

This utility model discloses a folding cabinet door mechanism for narrow compartments, comprising a first cabinet door, a second cabinet door, a first door lock, a second door lock, a hinge, a guide rail, a slider, a lower cabinet door fixing bracket, an upper cabinet door fixing bracket, a guide rail fixing bracket, a rotating shaft, an upper rotating pin, and a lower rotating pin. The first and second cabinet doors are hinged together. The first and second door locks are respectively mounted on the first and second cabinet doors. The upper and lower rotating pins are located at the upper and lower ends, respectively, and are rotatably connected to the upper and lower cabinet door fixing brackets. The guide rail fixing bracket is fixed to the upper end of the opposite side of the compartment opening, and both ends of the guide rail are connected to the upper cabinet door fixing bracket and the guide rail fixing bracket, respectively. The slider slides within the guide rail. The lower end of the rotating shaft is connected to the second cabinet door, and the upper end of the rotating shaft is rotatably connected to the slider. This utility model has a simple structure, few parts, and low cost.

The invention provides a display panel and a display device. The problem that in the prior art, the frame size of a display panel is large is solved. The display panel is provided with a display area and a frame area at least partially surrounding the display area, the frame area comprises a first frame area, an arc angle frame area and a second frame area which are connected in sequence, and the display panel comprises a first gate drive circuit located in the frame area; the first gate drive circuit comprises a plurality of first gate drive units, and the distance between every two adjacent first gate drive units in the second frame area and the arc angle frame area is larger than the distance between every two adjacent first gate drive units in the arc angle frame area.

The application relates to the technical field of low-power consumption of integrated circuits, and discloses a RAM (Random Access Memory) voltage maintaining circuit and method in a sleep mode, which comprises a reference current generating module, a current mirror array module, a core voltage generating module and a digital calibration control module; the reference current generating module generates nanampere reference current; the current mirror array module outputs programmable mirror current; the core voltage generating module converts the mirror current into output voltage VOUT; and the digital calibration control module compares Vto with Vref when the chip is working, and outputs a calibration signal to adjust the mirror current. The core voltage generating module comprises a PVT self-adaptive bias structure composed of NMOS and PMOS tubes, so that the output voltage is automatically adjusted according to process, voltage and temperature. The application adopts an intermittent working mode of "calibration during working and maintaining during sleeping", and combines an open-loop source follower architecture, so that typical static power consumption of 50nA, PVT self-adaptive adjustment, rapid awakening and extremely small chip area are realized, and the application can be widely applied to super-low-power-consumption devices such as the Internet of Things.

The utility model provides a material butt joint device which comprises a base (1), a first sliding rail (11), a second sliding rail (12) and a material butt joint device. The middle frame (2) is in sliding connection with the first sliding rail (11), and a second sliding rail (21) and a driving assembly (4) are arranged on the middle frame (2); the bearing platform (3) is in sliding connection with the second sliding rail (21) and is used for bearing materials; the driving assembly (4) drives the middle frame (2) through a first transmission assembly (5) and drives the bearing platform (3) through a second transmission assembly (6) so as to drive the middle frame (2) and the bearing platform (3) to move in the same direction relative to the base (1). According to the technical scheme provided by the embodiment of the utility model, the occupied area of the material butting device in the gene detection equipment is saved, and the integration level of the gene detection equipment is improved.

The invention relates to the technical field of integrated circuits, and provides an impedance matching circuit and method of a single-branch RRAM resistance network, and the impedance matching circuit of the single-branch RRAM resistance network comprises a positive electrode impedance calibration module, a negative electrode impedance calibration module, a user impedance calibration module and a DCI adjustment module. Each of the positive impedance calibration module, the negative impedance calibration module and the user impedance calibration module comprises an RRAM (Resistance Random Access Memory) resistance network structure; the anode impedance calibration module comprises an accurate matching resistor, a switching tube, a post-stage comparator and the RRAM resistor network structure; the cathode impedance calibration module comprises an accurate matching resistor, a switching tube, a post-stage comparator and the RRAM resistor network structure; the user impedance calibration module comprises a switch tube and an RRAM resistance network structure. According to the invention, the impedance matching resistor network is subjected to circuit simplification, the chip area occupation is reduced, and the circuit power consumption is saved.

This invention discloses a high-bandwidth, notch-free hybrid magnetocurrent sensor circuit, comprising a low-frequency path, a high-frequency path, a differential amplifier, a compensation path, and a dual-to-single converter. The low-frequency path utilizes a Hall effect sensor and auxiliary bias circuitry to detect the low-frequency component of the current, and simultaneously suppresses sensitivity drift and common-mode drift by replicating a negative temperature coefficient voltage. In the high-frequency path, the integrator consists of two paths with the same gain-bandwidth product but different low-frequency gains, and gain flatness is improved through compensation technology. The servo loop employs active capacitor amplification technology, using small-area resistors and capacitors to achieve ultra-low-frequency poles. The outputs of the high- and low-frequency paths are combined via a differential amplifier and then pass through a subtractor and a high-pass filter to form a compensation path for eliminating chopper ripple. Finally, the signals are converged in the dual-to-single converter to obtain a notch-free broadband output. This invention simultaneously solves problems such as chopper notch, gain unevenness caused by pole-zero mismatch, and the use of large-area passive components.

The utility model relates to a three-axis micro-electro-mechanical gyroscope and a micro-electro-mechanical gyroscope. A microelectromechanical gyroscope includes a die of semiconductor material forming a substrate and a detection structure suspended over the substrate. The detection structure has a main extension in a horizontal plane, is symmetric with respect to the central symmetry axis, and is provided for each gyroscope detection axis with: a first pair of detection masses arranged on a first side of the central symmetry axis; and a second pair of proof masses arranged on a second side of the central symmetry axis, the second side being opposite to the first side in the horizontal plane. The proof masses in each pair are capacitively coupled to a respective stator electrode according to a differential detection scheme. The stator electrodes are symmetrically arranged on opposite sides of the central symmetry axis with respect to each other.

The utility model discloses a rubber open mill which comprises a driving motor and a reduction gearbox, the reduction gearbox comprises two input shafts and two output shafts, and the driving motor is in transmission connection with one input shaft through a coupler; the main machine comprises a machine frame, a first roller and a second roller, the first roller and the second roller are rotationally arranged on the machine frame, the first roller and the second roller are arranged at an interval and are in transmission connection through a speed ratio gear, and pull rope emergency stop devices are arranged on the two sides of the top of the machine frame; the number of the main machines is two, and each output shaft of the reduction gearbox is in transmission connection with the first roller in one main machine through a gear coupling. According to the rubber open mill disclosed by the utility model, the reduction gearbox is updated, so that the first rollers in the two main machines are driven by the single driving motor to operate simultaneously, and the rubber open mill has different working modes to correspond to different capacities and does not need to be moved; due to the structure of the driving motor and the reduction gearbox, the occupied space of the rubber open mill is also reduced, and the production cost is reduced.