Array substrate, preparing method thereof and display device

Abstract

The invention provides an array substrate, a preparing method thereof and a display device, wherein the preparing method comprises the steps of: forming a pattern and a gate electrode insulating layer on a substrate, wherein the pattern comprises an active layer; forming a metal film on the gate electrode insulating layer, patterning the metal film through a primary composition process for forming the pattern which comprises a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the substrate; patterning the passivation layer through the primary composition process for forming a source electrode contact hole, a drain electrode contact hole and an over-bridge structure contact hole; and forming a transparent conductive film on the substrate, eliminating partial transparent conductive film through a film peeling process for forming a source electrode contact part, a drain electrode contact hole, a pixel electrode and an over-bridge structure. According to the preparing method, number of times in using the composition process is reduced. The array substrate has advantages of simple preparing process, high production efficiency and high yield rate.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] The Active Matrix display device is a display device that uses thin film transistors (Thin Film Transistor, TFT for short) for pixel display driving. It has many advantages such as light and thin, low power consumption, low radiation, and low cost. The most mainstream display technology. [0003] Active matrix display devices all include a TFT array substrate. According to the different materials for the formation of the TFT active layer, the TFT array substrate can be divided into amorphous silicon (a-Si: H), low temperature polysilicon (Low Temperature Poly-Silicon, LTPS for short), high temperature polysilicon (High Temperature Poly-Silicon, HTPS for short), oxide semiconductor and other types. Among them, the LTPS TFT array substrate has become one of the researc...

AI Technical Summary

Problems solved by technology

[0006] It is not difficult to find from the above-mentioned production methods that at least 8 to 9 patterning processes are required in the entire production process, and each patterning process needs to go through multiple processes such as gluing, exposure, development, cleaning, etc., which leads to arrays in the prior art. The manufacturing steps of the substrate are very complicated, and the production efficiency is low; in addition, high alignment accuracy is required in the patterning process, and high-precision alignment is very difficult. Once the alignment is not accurate, the yield rate of the product will directly decrease

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