37results about How to "Reduce the number of patterning processes" patented technology

The invention provides an array substrate, a preparing method thereof and a display device, wherein the preparing method comprises the steps of: forming an active material layer, a gate electrode insulating layer and a metal film on a substrate, forming a pattern which comprises an active layer and a pattern that comprises a gate electrode, a source electrode, a drain electrode, a gate line and a data line through a primary composition process; forming a passivation layer on the substrate, forming a source electrode contact hole, a drain electrode contact hole and an over-bridge structure contact hole through a secondary composition process; and forming a transparent conductive film on the substrate, eliminating partial transparent conductive film through a film peeling process for forming a source electrode contact part, a drain electrode contact hole, a pixel electrode and an over-bridge structure. According to the preparing method, number of times in using the composition process is reduced. The array substrate has advantages of simple preparing process, high production efficiency and high yield rate.

The invention belongs to the technical field of display and discloses an array substrate and a manufacture method of the array substrate. Source electrode patterns, drain electrode patterns, pixel electrode patterns and active layer patterns of the array substrate are formed through the once picture composition process. Compared with the traditional manufacture process of the array substrate, the manufacture method of the array substrate is simple in process, shortens production time, reduces product cost and improves product quality.

The invention provides an array substrate, a preparing method thereof and a display device, wherein the preparing method comprises the steps of: forming a pattern and a gate electrode insulating layer on a substrate, wherein the pattern comprises an active layer; forming a metal film on the gate electrode insulating layer, patterning the metal film through a primary composition process for forming the pattern which comprises a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the substrate; patterning the passivation layer through the primary composition process for forming a source electrode contact hole, a drain electrode contact hole and an over-bridge structure contact hole; and forming a transparent conductive film on the substrate, eliminating partial transparent conductive film through a film peeling process for forming a source electrode contact part, a drain electrode contact hole, a pixel electrode and an over-bridge structure. According to the preparing method, number of times in using the composition process is reduced. The array substrate has advantages of simple preparing process, high production efficiency and high yield rate.

The embodiment of the invention provides a thin film transistor and a manufacturing method of the thin film transistor, an array substrate and a display device, and relates to the technical field of display. The thin film transistor can solve the problem that the contact resistance exists between a source electrode and a semiconductor active layer and exists between a drain electrode and the semiconductor active layer, reduce the number of times of the picture composition technology and reduce the cost. The manufacturing method comprises the steps of forming a grid electrode, a grid insulating layer, the metal-oxide semiconductor active layer, the source electrode and the drain electrode on a substrate, wherein the formed metal-oxide semiconductor active layer comprises an indium-oxide series binary metal-oxide pattern layer making direct contact with the source electrode and the drain electrode, and a first pattern, a second pattern and a third pattern are included in the indium-oxide series binary metal-oxide pattern layer; using the insulating layer formed above the source electrode and the drain electrode as a barrier layer, adopting the ion implantation technology to implanting metal doping ions into the indium-oxide series binary metal-oxide pattern layer, conducting annealing treatment, converting the binary metal oxide of the third pattern into a polybasic metal-oxide semiconductor, and forming the metal-oxide semiconductor active layer. The thin film transistor is used for manufacturing the display device.

The invention relates to the technical field of display, in particular to a thin film transistor driving backplane, a manufacturing method and a display panel. The manufacturing method of the thin film transistor driving backplane comprises the following steps that a backplane substrate provided with a plurality of active device structures is manufactured; an electrode layer is arranged on the backplane substrate; the electrode layer is made into source electrodes, drain electrodes and pixel electrodes by the adoption of the one-time picture composition technology, wherein the pixel electrodes and the drain electrodes are arranged in an integrated mode. According to the manufacturing method, the electrode layer is made into the source electrodes, the drain electrodes and the pixel electrodes by the adoption of the one-time picture composition technology, wherein the pixel electrodes and the drain electrodes are arranged in the integrated mode; therefore, the source electrodes, the drain electrodes and the pixel electrodes are located on the same electrode layer; the prior art that the source electrodes, the drain electrodes and the pixel electrodes are formed through two-time picture composition technology is simplified into the manufacturing method that the source electrodes, the drain electrodes and the pixel electrodes can be formed only through the one-time picture composition technology; the thickness of the thin film transistor driving backplane is greatly reduced, the manufacturing steps are simplified, and the manufacturing cost is saved.

The invention provides an array substrate manufacturing method, an array substrate and a display device. The array substrate manufacturing method includes the steps of forming patterns of an active layer, a grid insulation layer, a grid and a grid line with the once layout technology; forming a passivation layer on a substrate where the active layer, the grid insulation layer, the grid and the grid line are formed, and forming a via hole in the passivation layer with the once layout technology; forming patterns of a data line, a source, a drain and a pixel electrode on the substrate where the passivation layer is formed with the once layout technology, wherein the drain makes contact with the active layer through the via hole. By means of the array substrate manufacturing method, the array substrate and the display device, the number of times of the layout technology adopted in the low temperature polycrystalline silicon array substrate manufacturing technology process is decreased, the technology complexity is accordingly lowered, and the technology cost is reduced while the manufacturing technology time is shortened.

The embodiment of the invention provides an upper substrate for the touch display panel, and a preparation method thereof, a touch display panel and a preparation method thereof, relating to the technical field of display and aiming at preventing the increase of picture composition times, and lowering the production cost. The preparation method of the upper substrate comprises the following steps: forming a black matrix through one-time composition technology, wherein the black matrix in the display area corresponds to a gap between the two adjacent touch electrodes; forming a negative photosensitive type organic resin thin film on the substrate of the black matrix, exposing and developing by taking the black matrix as a mask, removing the organic resin thin film corresponding to the black matrix so as to form an organic resin layer; forming a transparent conductive thin film above the organic resin layer, wherein the transparent conductive thin films respectively positioned above the organic resin layer and the black matrix are separated, the touch electrode is formed on the transparent conductive thin film above the organic resin layer, and a retention pattern is formed on the transparent conductive thin film above the black matrix. The preparation methods are used for manufacturing the upper substrate for the touch display panel, and the touch display panel.

The present invention provides an array substrate and a manufacturing method thereof as well as a display device, and belongs to the technical field of display. The manufacturing method of the array substrate comprises the following steps: forming a gate electrode, a gate line, a data line, a source electrode and a drain electrode on an insulation layer through a one-step patterning process; and installing the gate electrode, the gate line, the data line, the source electrode and the drain electrode in the same layer by using the same material. The technical solution of the present invention can reduce the number of times of patterning process when the array substrate is prepared, increase the production efficiency, reduce the manufacturing cost, and can also reduce a coupling capacitance among the source electrode, the drain electrode and the grate electrode of the array substrate, thereby reducing the power consumption of the array substrate.

The embodiment of the invention discloses an array substrate and a preparation method thereof, and a display device, relates to the technical field of display, and aims to prevent an active layer frombeing over-etched and reduce the process frequency and the manufacturing cost. The array substrate comprises an underlayer substrate, a light shading pattern, a buffer pattern, an active layer, a gate insulating layer, a first passivation layer and source and drain electrodes, wherein the orthographic projection of the buffer pattern on the underlayer substrate covers the orthographic projectionof the active layer on the underlayer substrate, the orthographic projection of the buffer pattern on the underlayer substrate is within the orthographic projection range of the light shading patternon the underlayer substrate, the area of the orthographic projection of the buffer pattern on the underlayer substrate is smaller than that of the orthographic projection of the light shading patternon the underlayer substrate, a first via hole, a second via hole and a third via hole are formed in the gate insulating layer and the first passivation layer, one of the source electrode and the drainelectrode is coupled with the active layer through the first via hole, and the other one is coupled with the active layer through the second via hole and is coupled with the light shading pattern through the third via hole. The array substrate is applied to the display device, so that the display device displays a picture.

The invention discloses an array substrate and a manufacture method thereof and a display device, and relates to the technical field of display. The times of a picturing technology adopted in the manufacture process of the array substrate can be decreased. The array substrate comprises an underlayment substrate and a gate, a gate insulation layer and an active layer, and further comprises a passivation layer arranged on the active layer and a source electrode, a drain electrode, a first electrode and a second electrode which are arranged on the passivation layer in a same-layer mode; the passivation layer is provided with a first via hole which comprises two oppositely arranged inclined side surfaces; the first electrode at least partially covers one side surface of the first via hole, the second electrode at least partially covers the other side surface of the first via hole, and the second electrode is in electronic connection with a lead of a common electrode; the passivation layer is further provided with a second via hole, the source electrode and the drain electrode are connected with the active layer through the second via hole, and the first electrode is in electronic connection with the source electrode or the drain electrode. The array substrate can be applied to the display device.

The invention provides a photoelectric detection substrate, a preparation method thereof, and a photoelectric detection device. The photoelectric detection substrate comprises a thin film transistor and a photodiode having coplanar structure, and the thin film transistor is a vertical channel structure. By forming a coplanar structure of the thin film transistor with a vertical channel structure and the photodiode, the invention effectively reduces the overall thickness of the photoelectric detection substrate, reduces the deformation of the substrate caused by stress, avoids damage caused bythe deformation of the substrate, and improves the yield of the product. At the same time, because of the coplanar structure, the thin film transistor and the photodiode can be fabricated simultaneously, the number of times of the patterning process are reduced, the preparation process is simplified, and the production cost is reduced. As the occupied area of the vertical channel structure thin film transistor is small, the photodiode photosensitive area can be increased, so that the detection efficiency can be improve and the resolution of the product can be improved.

The invention relates to an electrostatic discharge protection structure and a forming method and a working method thereof. The forming method comprises steps that a substrate is provided, and the substrate includes a first region, a second region and a third region; a first well region is formed in the substrate, and the first well region has first ions with the first concentration; a first gatestructure is formed on a surface of the second region; a first doping region is formed in the first region, and the first doping region has second ions having a conductivity type opposite to the firstions; a second doping region is formed in the third region, the second doping region has second ions with the second concentration, and the second concentration is greater than the first concentration; a third doping region is formed in the third region, the second doping region and the third doping region are arranged parallel to the first direction, the second doping region is adjacent to the third doping region, the three doping region has third ions with the third concentration, a conductivity type of the third ions is opposite to the second ions, and the third concentration is greater than the first concentration. The method is advantaged in that performance of the electrostatic discharge protection structure is improved.

The invention provides a thin film transistor and a manufacturing method thereof, a display substrate and a display device, and belongs to the technical field of display. According to the manufacturing method of the thin film transistor, a source electrode, a drain electrode and a grid electrode of the thin film transistor are formed through a one-time composition process. According to the technical scheme, the composition process times in manufacturing the thin film transistor can be reduced, and the production cost of the thin film transistor is reduced.