7results about How to "Avoid breakdown phenomenon" patented technology

The invention discloses a driving circuit of a light-emitting fiber array and light-emitting fabric equipment, and relates to the technical field of light-emitting fabric equipment, the driving circuit comprises a power supply module, a control module, a boost circuit, an H-bridge circuit and a switch array, and the switch array is connected with the light-emitting fiber array; the power supply module is connected with the boost circuit and the control module. The boost circuit is connected with the H-bridge circuit. The boost circuit is connected with the H-bridge circuit and is used for boosting input voltage to target voltage and inputting the target voltage into the H-bridge circuit; the control module is connected with the H-bridge circuit and is used for driving the H-bridge circuit to generate positive and negative alternating voltage according to the voltage inversion frequency corresponding to the target overall brightness; and the H-bridge circuit is connected with the luminous fiber array and is used for outputting positive and negative alternating voltage to the luminous fiber array, so that the luminous fiber array emits light according to the target overall brightness. The technical problem that an existing driving circuit for the light-emitting fiber array is low in reliability is solved.

The invention discloses a high-dielectric low-loss dielectric material for a high-voltage ceramic capacitor, and relates to the technical field of dielectric materials, which comprises the following steps: S1, preparing bismuth stannate; step S2, preparation of bismuth titanate; step S3, preparation of barium zirconate; step S4, compression molding and sintering; and S5, printing an electrode. The high-dielectric low-loss dielectric material for the high-voltage ceramic capacitor is high in dielectric constant and low in dielectric loss, and meets N4700 temperature characteristics and environmental protection requirements.

The utility model discloses a junction box and a photovoltaic assembly. The junction box comprises a box body part, a diode, connecting parts and connecting supports, the diode, the connecting parts and the connecting supports are arranged in the box body part, the connecting supports are arranged on the two sides of the diode respectively, the connecting supports and the diode are connected to form an access, and the access is connected with the box body part. The connecting supports are higher than the diodes, the connecting supports are respectively connected with the connecting parts, and the connecting parts are led out of the box body part to be electrically connected with an external circuit. The photovoltaic module comprises the junction box. The junction box is simpler in structure and beneficial to popularization and use, laser welding is more reasonable and more convenient in the preparation process of the junction box, the diode can be effectively protected from being affected by laser, and the thermal breakdown phenomenon of the diode chip is avoided.

The invention discloses a brightness control method, light-emitting fabric equipment, a storage medium and a program product, and relates to the technical field of electroluminescence, the brightness control method is applied to the light-emitting fabric equipment, and the light-emitting fabric equipment comprises a driving device and a light-emitting fiber array which are electrically connected; the brightness control method comprises the following steps: acquiring target brightness information for a light-emitting fiber array, wherein the target brightness information comprises target overall brightness of the light-emitting fiber array; determining a corresponding voltage inversion frequency according to the target overall brightness; and controlling the driving device to invert the voltage output to the light-emitting fiber array according to the voltage inversion frequency, so that the light-emitting fiber array emits light according to the target overall brightness. The technical problem that an existing brightness control mode for the light-emitting fiber array is low in reliability is solved.

The invention discloses an insulating material for ultrahigh-voltage cable accessories, and belongs to the technical field of cable accessory materials. The insulating material for the ultrahigh-voltage cable accessory comprises the following raw material components: a rubber base material, a filler composition for adjusting the volume resistivity of the insulating material, an activating agent, zinc oxide, an accelerant composition and a vulcanizing agent composition, wherein the rubber base material is ethylene propylene diene monomer; the filler composition can be prepared from the following components in parts by weight: 40 to 55 parts of filling material, 4 to 5 parts of carbon nano tube and 0.5 to 1 part of graphite micro powder; the filler composition can also comprise the following components in parts by weight: 50-65 parts by mass of a filling material, 2-3 parts by mass of nano zinc oxide and 16-18 parts by mass of copper calcium titanate.

The present application is applicable to the field of display technology, and provides a thin film transistor and a preparation method thereof, and an array substrate. The thin film transistor includes a copper gate, an active layer, and an insulating layer group located between the active layer and the copper gate. The insulating layer group includes at least three low-speed deposited gate insulating layers, and the at least three low-speed deposited gate insulating layers are sequentially covered on the copper gate layer by layer; a medium-speed deposited gate insulating layer and / or a high-speed deposited gate insulating layer are arranged between the two low-speed deposited gate insulating layers. A medium-speed deposited gate insulating layer and / or a high-speed deposited gate insulating layer are arranged between the two low-speed insulating layers to improve processing efficiency. On the one hand, the denser characteristics of the lower low-speed deposited gate insulating layer are utilized to effectively block the diffusion of metallic copper. On the other hand, the denser characteristics of the upper low-speed deposited gate insulating layer are utilized to fully contact with the active layer, thereby ensuring the cleanliness of the interface between the insulating layer and the active layer, reducing the concave-convex phenomenon of the interface, and improving the electron mobility.

The utility model discloses a cable with a high-temperature-resistant structure, which comprises an inorganic fireproof layer, a metal fireproof layer arranged inside the inorganic fireproof layer, a heat insulation layer arranged inside the metal fireproof layer, copper conductors uniformly distributed inside the heat insulation layer, a protective sleeve arranged outside the copper conductors, and a steel belt layer arranged outside the metal fireproof layer. And a connecting layer is arranged between the steel belt layer and the inorganic fireproof layer. According to the utility model, through the arrangement of the inorganic fireproof layer, the metal fireproof layer and the heat insulation layer, when the cable is used in high-temperature industries such as smelting, heat treatment, glass manufacturing and the like, the cable is not easy to be melted and damaged due to accidental encountering of high-temperature objects, so that the high-temperature-resistant effect of the cable is better, and the inorganic fireproof layer is made of low-cost glass fibers, so that the service life of the cable is prolonged. And the manufacturing cost of the high-temperature-resistant cable is reduced.