259results about How to "Prevent breakdown" patented technology

The invention discloses a semiconductor device and a manufacturing method thereof, a power module, a power conversion circuit, and a vehicle. The semiconductor device comprises a semiconductor body which comprises a well region, a first region and a second region; the first surface is also provided with a groove comprising a first sub-groove and a second sub-groove; the conduction type of the first region and the conduction type of the well region are the same and opposite; the first sub-groove comprises a first side wall and a second side wall which are overlapped in vertical projection on the first surface, and the second region surrounds the first side wall, the second side wall and a part of the bottom, connected with the second side wall, of the second sub-groove; the conduction type of the second region is the same as that of the well region, and the doping concentration of the second region is greater than that of the well region; the pressure-resistant filling layer is located in the second sub-trench; the source electrode is located on the first surface. According to the technical scheme provided by the embodiment of the invention, the specific on-resistance and the peak electric field at the bottom of the gate structure are reduced, so that the electrical performance of the semiconductor device is improved.

The invention discloses a barium strontium titanate-based high-entropy energy storage ceramic with a core-shell structure, the barium strontium titanate-based high-entropy energy storage ceramic comprises SiO2 serving as a shell part and high-entropy ceramic powder serving as a core part, and the high-entropy ceramic powder comprises barium strontium titanate serving as a main phase and sodium potassium bismuth titanate serving as a high-entropy doping phase. The invention also discloses a preparation method of the barium strontium titanate-based high-entropy energy storage ceramic with the core-shell structure, which comprises the following steps: mixing and dissolving a carbonate raw material of a main phase and carbonate or oxide of a high-entropy doping phase, and stirring to form gel; removing organic components in the gel; calcining to form a perovskite phase to obtain high-entropy ceramic powder; sequentially dispersing in an acidic activator, a weakly acidic buffer agent and a weakly alkaline surfactant, adding a silicon source precursor, and heating to form a coating phase SiO2; and after sintering, annealing to obtain a final product. According to the barium strontium titanate-based high-entropy energy storage ceramic with the core-shell structure, the polarization intensity and the breakdown field strength of the ceramic can be improved at the same time.

The invention discloses a hybrid DC circuit breaker, a control and protection device and a control and protection method. Three independent merging units of the device are used to collect the line current of the total outgoing line at one end of the hybrid DC circuit breaker, the main branch current, the transfer branch current, the total current of the energy-consuming branch and the branch current of the energy-consuming branch; the communication module of the control and protection host realizes the communication between the main branch, the transfer branch, the converter station control equipment and the converter station protection equipment; the protection judgment module performs overcurrent judgment of the circuit breaker according to the current of the merging unit; the three-out-of-two logic module performs three-out-of-two logic judgment of overcurrent according to the judgment result of the protection judgment module; the control module realizes the circuit breaker opening and closing timing and equipment fault judgment, and sends the control and protection instructions to the main branch commutation component and the semiconductor component of the transfer branch through the communication module and the interface unit; the protection method based on the device can quickly execute the opening and closing process, quickly detect the equipment status and implement effective protection.

The utility model discloses a novel double-layer pure metal transmission array antenna used for wave beam scanning, compared with a traditional transmission array, a dielectric substrate which is easily influenced by environmental factors is not used, but a pure metal structure is adopted, so that the dielectric substrate is prevented from being damaged in some extreme environments. Meanwhile, two groups of first double-end cross-shaped slot structures and second double-end cross-shaped slot structures which are different in length and parallel to the y direction are etched on the transmission unit, and the first double-end cross-shaped slot structures and the second double-end cross-shaped slot structures are alternately arranged on the transmission unit. Compared with a Huygens pure metal unit, the unit has the functions of low transmission loss and meeting the 360-degree phase change range, the unit structure is simple, large-scale multi-parameter scanning is not needed, the design difficulty is low, the expandability and universality of the unit are improved, meanwhile, an additional structure such as a metal column is not introduced, and the cost is low. And relatively low processing complexity is maintained, and the processing cost is relatively low.

The invention discloses a driving circuit and a half-bridge driving circuit which are used for driving a target power tube, and the circuit comprises a floating rail circuit which is connected between a first node and a second node and is used for generating a floating voltage and a clamping voltage; the control signal generating circuit is connected between the first node and the floating voltage and generates a control signal based on the PWM signal. The gate driving circuit is connected between the first node and the second node, is connected with the clamping voltage, and is used for generating a target driving signal based on the plurality of control signals so as to drive the target power tube. Floating voltage is generated through the floating rail circuit, so that the control signal generation circuit works in a floating voltage domain, and the risk that a high-voltage tube is broken down is avoided; a clamping voltage is generated through the floating rail circuit, so that an output tube of the gate drive circuit can adopt a low-voltage tube, and the reaction speed of the gate drive circuit is increased; half-bridge driving can be realized based on two groups of floating rail circuits, and the circuit area is saved.

The invention relates to a trench gate super-junction MOS structure and a preparation method thereof. The trench gate super-junction MOS structure comprises a first conductive type substrate; the first conductive type epitaxial layer is arranged on the front surface of the first conductive type substrate; the second conductive type body region is arranged on the front surface of the first conductive type epitaxial layer and is positioned in the first conductive type epitaxial layer; the number of the second conductive type columns is at least two, and the second conductive type columns extend from the front face of the first conductive type epitaxial layer to the first conductive type epitaxial layer. The trench gate structure is arranged between two adjacent second conductive type columns and extends from the front surface to the back surface of the second conductive type epitaxial layer; the second conductive type doped column is arranged corresponding to the trench gate structure and is arranged on the back surface of the trench gate structure; and the first conductive type source region is arranged on the front surface of the second conductive type body region and is positioned in the second conductive type body region. The semiconductor device has the effects of further reducing the on resistance, reducing the electric field in the gate oxide layer and protecting the gate oxide layer.

The invention discloses an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof, and the MOSFET device comprises a substrate, an epitaxial layer located above the substrate, a drain electrode located below the substrate, a current expansion region located in the epitaxial layer, a well region located above the current expansion region, a source region located in the well region, and a body region located in the source region, the grooves are formed in the two ends of the epitaxial layer, the gate groove is formed in the center of the epitaxial layer, the gate dielectric layer is located in the grooves and the gate groove, the polycrystalline silicon is located on the surface of the gate dielectric layer, and the passivation layer is located on the upper surface of the epitaxial layer. The trench gate injection region is introduced into the MOSFET device and can be used for modulating an internal electric field of the device, so that gate-oxide breakdown is protected, meanwhile, the effective conduction area of the device can be increased, and the conduction capability of the device is improved. The device structure and the preparation method are simple, the effect is remarkable, high-performance and batch preparation and production of the groove type SiC MOSFET device can be achieved, and the device has huge market potential and wide application prospects.

The invention discloses a gallium oxide junction barrier Schottky diode and a preparation method thereof, and relates to the technical field of Schottky diodes. The diode comprises a cathode, a gallium oxide substrate and a gallium oxide drift layer which are sequentially stacked from bottom to top, wherein the upper surface of the gallium oxide drift layer is of a boss structure; the boss structure comprises a convex part and a shoulder part; the first dielectric layer comprises a dielectric layer A of which the relative dielectric constant is greater than or equal to 9 and a dielectric layer B of which the breakdown electric field intensity is greater than or equal to 8MV / cm, which are stacked from bottom to top; the anode is positioned on the surface of the lug boss; the second dielectric layer is positioned on the surface of the lug boss and on the side surface of the anode; the metal field plate is located on the second dielectric layer; the P-type semiconductor layer covers the metal field plate, the second dielectric layer, the side surface of the convex part, the surface of the shoulder part and the surface of the first dielectric layer; and the third dielectric layer covers the side surface of the anode part, the surface of the P-type semiconductor layer and the surface of the first dielectric layer part. The device can bear higher reverse breakdown voltage.

The invention relates to the technical field of submarine cables, in particular to a high-toughness and cold-resistant submarine cable, which comprises a core wire, an insulating layer sleeved outside the core wire, a water-blocking tape sleeved outside the insulating layer, a metal shielding layer arranged outside the water-blocking tape, and a PE sheath sleeved outside the metal shielding layer. According to the high-toughness and cold-resistant submarine cable, the rubber layer is extruded behind the outer sheath, so that the outer sheath can be protected, submarine cable breakdown caused by damage of the outer sheath is prevented, and meanwhile, a heat preservation effect on the submarine cable can be achieved; a rubber layer is extruded on each steel wire, so that the tensile strength of the armor layer can be improved; and the rubber layer can fill gaps among the steel wires in the steel wire armoring, so that a certain water blocking effect is achieved, heat preservation is further performed on the submarine cable, and the service life of the submarine cable is prolonged.

The invention discloses a semiconductor device, a power module, a power conversion circuit, and a vehicle. The semiconductor device comprises a semiconductor body which comprises a first surface and a second surface which are oppositely arranged; the semiconductor body further comprises a well region and a first region; the first surface is also provided with a first groove and a second groove; the voltage-withstanding layer is located in the second groove, and the voltage-withstanding layer covers the first bottom and the second side wall of the first groove; the gate structure is located in the first groove; the insulation resistance of the voltage-withstanding layer is greater than that of the insulating layer of the gate structure, and the voltage-withstanding layer is used for reducing a peak electric field at the bottom of the gate structure; the source electrode is located on the first surface. According to the technical scheme provided by the embodiment of the invention, the specific on-resistance of the semiconductor device and the peak electric field at the bottom of the gate structure are reduced, and the electrical performance of the semiconductor device is further improved.

The invention discloses an air-locking feeding device, an air-locking feeding method and an air-locking feeding system.According to the air-locking feeding device, air distributors are evenly arranged at the bottoms in any feeding cavity and any discharging cavity in a multi-point-position mode, and an adjusting valve is independently arranged on an air supply branch pipe connected with each air distributor; therefore, the fluidization state of the materials in each material cavity can be adjusted and controlled by automatically adjusting and controlling the opening degree of each adjusting valve, accurate material distribution according to the proportion can be achieved, and the air locking effect is reliable. Wherein each air distributor is provided with an independent adjusting valve, accurate regulation and control of the air supply flow in the material cavity can be achieved, the adjusting fineness and precision are high, the air locking performance is good, the situation that the interior of the material cavity reaches a fluidization critical state, consequently, locked air is broken down can be avoided, and it can be guaranteed that the air locking feeding device operates efficiently, stably, safely and reliably. The whole device is simple in structure and good in integration, and has the advantages of low equipment investment, high automation degree and the like.

The utility model discloses a protective shed for constructional engineering, and relates to the technical field of protective sheds. Lower supporting plates are hinged to the upper ends of the left side wall and the right side wall of the middle frame, upper connecting frames are rotationally connected to the front sides and the rear sides of the ends, away from the middle frame, of the lower surfaces of the two lower supporting plates, lower connecting frames are hinged to the lower ends of the upper connecting frames, height adjusting mechanisms are arranged at the lower ends of the lower connecting frames, and upper buffering plates are arranged above the lower supporting plates. Falling sundries are buffered through arrangement of an upper buffering plate and a soft cushion, the stability and the buffering effect of the protective shed are enhanced, height adjustment of a lower supporting plate is achieved through cooperation of a lifting lead screw and a height adjusting rod, and therefore it is guaranteed that the device can meet the requirements of different conditions; fixing inserting rods are pulled out, the two lower supporting plates and the upper buffering plate can be folded in the direction of the middle frame, meanwhile, the four height adjusting mechanisms are folded in the direction of the lower side walls of the lower supporting plates, and the device is smaller in size and more convenient to store after being folded.

The invention relates to an image sensor and a preparation method thereof, and electronic equipment, the image sensor comprises a substrate, a plurality of isolation structures and a plurality of photodiodes, the isolation structures are arranged in the substrate at intervals, the photodiodes are arranged between the adjacent isolation structures, and each isolation structure comprises a first isolation layer located in the substrate; the first high-dielectric-constant dielectric layer is located on the side, away from the substrate, of the first isolation layer; the reflecting layer is located on the side, away from the first isolating layer, of the first high-dielectric-constant dielectric layer; the second high-dielectric-constant dielectric layer is located on the side, away from the first high-dielectric-constant dielectric layer, of the reflecting layer; wherein the reflecting layer and at least one of the first high-dielectric-constant dielectric layer and the second high-dielectric-constant dielectric layer have the same element. According to the image sensor, the situation that the second high-dielectric-constant dielectric layer is gathered at the bottom of the isolation structure can be avoided, the uniformity of the side wall of the isolation structure is improved, and therefore the reflection efficiency is improved.

The utility model relates to the technical field of batteries, and discloses a battery top cover assembly, a battery and a power device. The battery top cover assembly comprises a cover plate and an insulating part, the cover plate is provided with a pole; the insulating part is of a flat plate structure, a first avoiding hole is formed in the position, corresponding to the pole, of the insulating part, one end of the pole penetrates through the first avoiding hole, and the pole is suitable for being conductively connected with a pole lug of a pole group; the peripheral edge of the insulating part is recessed from the peripheral edge of the cover plate to form a step structure. According to the battery top cover assembly provided by the utility model, the insulating part is of a flat plate structure, the structure is simple, the processing is easy, the battery top cover assembly can be quickly obtained only through die cutting, the processing technology is simple, and the cost is low. As the peripheral edge of the insulating part is sunken in the peripheral edge of the cover plate to form a step structure, when the cover plate and the shell of the battery are welded, the insulating part is prevented from being scalded and warped, or welding laser is prevented from leaking into the interior to sweep the insulating part, and the insulating part is prevented from being burnt.

The invention provides a fireproof leaky cable and a preparation method thereof, and relates to the technical field of cables. The fire-resistant leaky cable sequentially comprises a conductor wire core, an insulating layer, an outer conductor layer, a fire-resistant layer and a sheath layer from inside to outside, the fire-resistant layer is a mica tape, the mica tape comprises an adhesive, and the adhesive is organic silicon resin. The sheath layer is of a double-layer structure and comprises a ceramic polyolefin layer and a flame-retardant polyolefin layer, the ceramic polyolefin layer wraps the outer side of the fireproof layer, and the flame-retardant polyolefin layer wraps the outer side of the ceramic polyolefin layer. According to the technical scheme, the fire-resistant layer, the ceramic polyolefin layer and the flame-retardant polyolefin layer are sequentially coated outside the outer conductor layer to construct an echelon synergistic fire-resistant system, so that the fire-resistant leaky cable has excellent mechanical performance and relatively high fire-resistant capability.

The application discloses the technical fields of measurement, and particularly discloses a kind of measurement circuit for detecting weak current in multi-channel nanopore system, it includes: overcurrent protection module, switch matrix module, R-TIA module, overvoltage protection module, signal processing module, signal acquisition module, DAC module;Overcurrent protection module input port is connected with nanopore, overcurrent protection module output port is connected with the input port of switch matrix module in series, the output port of switch matrix module is connected with the negative input port of R-TIA module in series, the output of R-TIA module is connected with the input port of overvoltage protection module, the output port of overvoltage protection module is connected with the negative input of operational amplifier OPA2 of signal processing module, signal processing module is connected with signal acquisition module;The output of DAC module is connected with the positive input of operational amplifier OPA2 in R-TIA module and signal processing module respectively.

The application provides a semiconductor device and a manufacturing method thereof. The method comprises: forming a drift layer on a substrate; forming a first epitaxial layer on the drift layer, doping a partial region of the first epitaxial layer to form a shielding region, and the first epitaxial layer not doped is a first doped region; forming a second epitaxial layer on the first epitaxial layer, doping a partial region of the second epitaxial layer to form a first contact region, and the second epitaxial layer not doped is a second doped region; forming a third epitaxial layer on the second epitaxial layer, doping a first region of the third epitaxial layer to form a second contact region, doping a second region of the third epitaxial layer to form a source region, and the third epitaxial layer not doped is a body region; forming a trench gate structure, an interlayer dielectric layer and a source metal layer. The application makes the shielding region electrically connected with the source metal layer, so that the shielding region potential is clamped by the source, thereby effectively inhibiting the electric field peak at the trench corner in the blocking state.

The invention relates to a high electric field breakdown resistant packaging process, which is characterized by comprising three parts, namely chip manufacturing, substrate processing and laminating process, in the chip manufacturing process, a sacrificial material is manufactured on the surface of a wafer, a metal electrode connected with the wafer is arranged after the sacrificial material is etched, and in the substrate processing process, a metal electrode connected with the wafer is arranged after the sacrificial material is etched. A functional material is arranged on the surface of the substrate, finally, in the laminating process, the sacrificial material between the substrate and the chip is removed, and then an insulating material is filled. The process has the advantages that the cleanness between the substrate and the chip is greatly ensured, contamination and residues are avoided, the pollution of a bonding interface can be effectively reduced, the breakdown problem of a device during working is solved, and the breakdown resistance of the device is improved.

This application provides an array substrate, a display panel, and a display device, relating to the field of display technology, for improving the reliability of the array substrate. The array substrate includes a substrate, a first conductive layer, an insulating layer, an active layer, and a second conductive layer. The first conductive layer is disposed on the substrate and includes a first signal line and a second signal line, with the end of the first signal line close to the second signal line. The insulating layer is disposed on the side of the first conductive layer away from the substrate, and includes a through-hole. The orthographic projection boundary of the through-hole on the substrate is connected to the orthographic projection boundary of the first signal line on the substrate, and also connected to the orthographic projection boundary of the second signal line on the substrate. The active layer is disposed on the side of the insulating layer away from the substrate, and the active layer is made of an oxide semiconductor material. The second conductive layer is disposed on the side of the active layer away from the substrate.

The invention discloses a battery, which comprises a battery protection board, and the battery protection board comprises a controller, a battery protection switch and a system detection pin; the second connecting piece is arranged on the battery protection plate and is in signal connection with the system detection pin; one end of the first connecting piece is detachably connected with the second connecting piece, and the other end of the first connecting piece is connected with electric equipment and is grounded; the controller is in signal connection with the battery protection switch and the system detection pin. The battery protection board has the beneficial effects that the second connecting piece is arranged on the battery protection board, and the controller monitors the voltage value of the second connecting piece in real time and identifies the state of the battery according to the voltage value, so that the battery can be disconnected from an external circuit in time, and the battery cannot be charged and discharged; therefore, the breakdown or short circuit problem caused by the contact of the battery output port with other conductors is avoided.

The utility model provides a butt joint assembly, a butt joint device and cable maintenance equipment, the butt joint assembly can be at least used for butt joint and separation of an inspection robot and a high-altitude cable, and the butt joint assembly comprises a frame which is provided with a containing space for containing the inspection robot and a side opening allowing the high-altitude cable to enter the containing space; the butt-joint frame is arranged on the frame-shaped frame and used for guiding the aerial cable to enter the containing space from the side opening and positioning the aerial cable at the butt-joint position of the aerial cable and the inspection robot; and the connecting frame is connected to the frame-shaped frame, located above the frame-shaped frame and used for being connected with an aircraft. According to the butt joint assembly of the structure, lateral butt joint with a high-altitude cable is achieved through translation, when an inspection robot is put into the two lower wire harnesses in the three wire harnesses distributed in the shape like the Chinese character'pin ', the unmanned aerial vehicle can be prevented from being too close to the upper wire harnesses, the unmanned aerial vehicle cannot be broken down by an electromagnetic field of the upper wire harnesses any more, and the inspection robot can be put into the inspection robot. And the working safety of the unmanned aerial vehicle and the inspection robot is remarkably improved.

The utility model discloses a composite armored semi-rigid dust cover for an automobile constant velocity universal joint. The universal joint dust cover mainly solves the problem that the universal joint dust cover is poor in physical damage resistance. The protective cover is characterized in that a protective layer (2) made of metal is connected with the hoop and arranged on the circumferential outer side of the cover body; and the surface coating (3) is arranged on the outer wall of the cover body and is used for reflecting infrared rays. The utility model provides a composite armored semi-rigid dust cover for a constant velocity universal joint of an automobile, which is provided with a protective layer made of metal to prevent flying stones on a road surface and prevent the dust cover from being broken down; and the ceramic-based reflecting coating is sprayed on the surface, so that the infrared wave band is mainly prevented, the infrared radiation absorption rate of the cover body is reduced by 40% to the maximum, and the cover body failure caused by excessive heat absorption of the cover body is avoided.

This invention relates to a substrate clamping circuit for a bidirectional power device, wherein the sources of a first switching transistor and a second switching transistor are connected together and to the substrate of the bidirectional power device; the drain of the first switching transistor is connected to the first source of the bidirectional power device, and the drain of the second switching transistor is connected to the second source of the bidirectional power device; the gate of a third switching transistor is connected to its own source through a third resistor, its drain is connected to the second source, and its source is connected to the gate of the first switching transistor; the gate of a fourth switching transistor is connected to its own source through a fourth resistor, its drain is connected to the first source, and its source is connected to the gate of the second switching transistor; the source of the third switching transistor is also connected to the substrate of the bidirectional power device through a first resistor, and the source of the fourth switching transistor is also connected to the substrate of the bidirectional power device through a second resistor. This invention enables the substrate potential to be maintained near the lower potential of the source.

The utility model provides a double-end flyback circuit and a power supply. The double-end flyback circuit comprises a first absorption unit, a second absorption unit and a transformer, the transformer comprises a secondary winding, a first primary winding and a second primary winding, wherein the first primary winding and the second primary winding are connected in series. The second end of the first absorption unit is in one-way conduction with the first end of the first absorption unit and is used for freewheeling of the first primary winding when the path is disconnected; the second end of the second absorption unit is unidirectionally conducted to the first end of the second absorption unit and is used for freewheeling the second primary winding when the path is disconnected; the first absorption unit and the second absorption unit are further used for being connected in series when the access is disconnected and jointly form follow current for the first primary winding and the second primary winding. Three follow current loops can be formed when the access is disconnected, the peak voltage of the transformer can be well absorbed through the three follow current loops, the difference of the number of turns of the two primary windings does not affect the absorption of the peak voltage, and the performance of the circuit is effectively improved.

The embodiment of the present invention discloses a data request processing method, device, server and storage medium, the method comprising: receiving a target data request sent by a client, the target data request including a target request identifier; detecting whether there is target cache data corresponding to the target request identifier in a cache having a preset cache structure; if there is target cache data, obtaining a target forced expiration identifier and a target logical expiration time corresponding to the target request identifier from the target cache data; if the target forced expiration identifier is a first identifier, obtaining target response data corresponding to the target request identifier from the target cache data, and asynchronously updating the target cache data when the current request time is greater than or equal to the target logical expiration time. The technical solution of the embodiment of the present invention can solve the problem of performance degradation caused by cache breakdown.

This utility model relates to the field of filter element clogging and flushing, specifically to a waste oil precision filter element clogging and flushing assembly. It includes a flushing filter tank, a main body for flushing the filter element, an inner sliding groove formed on the inner wall of the flushing filter tank, and an inner sliding plate for internal sliding connection. Each inner sliding plate has a positioning groove on its upper surface, and a positioning block is embedded inside the positioning groove. This utility model includes a waste oil filter element, a tank cover, a vacuum pump, a self-cleaning air rod, an inner flushing chamber, an outer flushing chamber, a chemical tank, and a cleaning water tank. When using this waste oil precision filter element clogging and flushing assembly, the vacuum pump first provides a certain amount of gas to the self-cleaning air rod. The self-cleaning air rod passes through the inner cleaning head inside the waste oil filter element, impacting some of the dirt adhering to the filter element. The gas impact removes loose dirt from the filter element surface, reducing the load on subsequent processing.

The utility model discloses a double-arc-extinguishing type multi-pole circuit breaker, which comprises a circuit breaker, an actuating mechanism is arranged in the middle of the circuit breaker, an L-pole moving contact assembly and an N-pole moving contact assembly are respectively arranged on two sides of the actuating mechanism, an L-pole arc-extinguishing chamber is arranged outside the L-pole moving contact assembly, an L-pole protective cover is arranged in the L-pole arc-extinguishing chamber, and an N-pole protective cover is arranged in the N-pole moving contact assembly. An N-pole arc extinguish chamber is arranged outside the N-pole moving contact assembly, an N-pole arc extinguish cover is arranged in the N-pole arc extinguish chamber, the L-pole arc extinguish chamber and the N-pole arc extinguish chamber are separated from each other through a partition plate, and guide rib sets connected with the partition plate are arranged on the sides, away from the executing mechanism, of the L-pole arc extinguish cover and the N-pole arc extinguish cover. The guide rib set comprises a plurality of guide ribs arranged at intervals, and guide channels allowing airflow to penetrate through are formed in the two sides of the guide ribs. According to the utility model, the arc extinguishing effect of the arc extinguishing chamber on the arc can be improved, the smoothness of discharging the arc gas out of the arc extinguishing chamber is improved, and the temperature of the arc extinguishing chamber is reduced.

The embodiment of the invention discloses a plasma generation assembly and an electric gas stove. The plasma generation assembly comprises a plasma needle, a plasma cylinder and a cyclone groove. The plasma cylinder is of a hollow structure and is arranged at one end of a groove opening of the cyclone groove, an air cavity is formed after the inner side wall of the plasma cylinder and the cyclone groove are assembled, the bottom wall of the cyclone groove extends into the air cavity to form a limiting pipe, one end of the plasma needle is located in the air cavity, and the other end of the plasma needle is located in the air cavity. The other end of the rotating shaft penetrates through the limiting pipe and then penetrates out of the bottom wall of the cyclone groove; a plurality of through holes communicated with the air cavity and the outside are formed in the side wall of the cyclone groove, and an annular boss is arranged at the end, away from the nozzle, of the cyclone groove. According to the embodiment of the invention, the cyclone groove is arranged, so that the effects of preventing the plasma needle or the plasma cylinder from being punctured and preventing water are achieved.

The utility model relates to an auxiliary contact mechanism and a relay comprising the same, and the auxiliary contact mechanism comprises an outer cover, and a plurality of static contacts and a plurality of auxiliary leading-out terminals which are connected with the outer cover. The auxiliary contact mechanism further comprises an auxiliary reed fixing block connected with the outer cover, an auxiliary movable reed and an auxiliary static reed, the auxiliary movable reed and the auxiliary static reed are integrally connected with the auxiliary reed fixing block, and the length of the auxiliary movable reed is different from that of the auxiliary static reed. The ends, extending out of the auxiliary reed fixing block, of the auxiliary movable reed and the auxiliary static reed are respectively connected with an auxiliary leading-out terminal, and the other ends, extending into the auxiliary reed fixing block, of the auxiliary movable reed and the auxiliary static reed abut against each other or are far away from each other. The auxiliary reed fixing block is integrally connected with the auxiliary movable reed and the auxiliary static reed, so that the auxiliary movable reed and the auxiliary static reed are not assembled with the movable reed fixing block any more, and assembling procedures are greatly reduced.