1405results about How to "Prevent breakdown" patented technology

In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".

A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.

The invention provides a direct-current power supply hot plug slow starting control circuit, which comprises a discrete component slow starting circuit, power resistance circuits and a metal oxide semiconductor (MOS) tube drain-source electrode detecting circuit. The power resistance circuits are connected in parallel between MOS tube drain-source electrodes and a drain electrode of the discrete component slow starting circuit. The MOS tube drain-source electrode detecting circuit is connected with the power resistance circuits and the discrete component slow starting circuit and used for detecting voltage values of the power resistance circuits. When the voltage values are in a range of set values, MOS tubes of the power resistance circuits are connected. When the voltage values are beyond the range of set values, the MOS tubes of the power resistance circuits are disconnected. The invention further provides a control method for direct-current power supply hot plug slow starting. The direct-current power supply hot plug slow starting control circuit and the control method can effectively avoid MOS breakdown due to avalanche, simultaneously can effectively reduce voltage stress of the MOS tube drain-source electrodes and facilitates economic selection.

The bottom layer of invention uses aluminium baseboard; the intermediate layer is a heat conduction insulation layer; the surface layer is an electric conduction layer. It features the following: the heat insulation layer is a ceramic-like thin film layer with 10-400 micron thick and >=100Momega insulation resistance, which chemical composition is aluminium oxide. The preparation method comprises: making pretreatment, de-oiling and washing for the surface of the aluminium baseboard using mechanical method or chemical method to form a clean workpiece plane; using the microarc oxide treatment and the microplasma surface ceramic method to make a heat conduction insulation layer on the workpiece surface; finally, overlapping an electric conduction layer on the heat conduction insulation layer; etching circuit pattern.

This invention discloses a surface treatment method for Mg-based material. The method comprises: (1) performing micro-arc oxidation treatment on Mg or Mg alloy work piece as the anode in a Cl--free alkaline micro-arc oxidation electrolyte; (2) activating; (3) performing preliminary chemical plating of Ni; (4) performing chemical plating of Ni; (5) performing thermal treatment. The micro-arc oxidation treatment comprises: (1) applying a positive pulse with an average current density of 5-20 A / dm2 until the voltage is automatically elevated to a critical value, and applying a constant working voltage of 50-80 V (total time = 5-30 min); (2) applying a positive pulse of 30-300 V and a negative pulse of 0-200 V with an average current density of 0.5-15 A / dm2 (total time = 10-60 min). The activation comprises: (1) performing anode alkaline coarsening treatment for 3-10 min; (2) performing surface activation treatment; (3) performing cathode alkaline electrification reduction activation treatment; (4) performing cathode acidic electrification dispergation activation treatment. The treated Mg alloy work piece has high corrosion resistance of ceramic materials and the properties and touch sense of metal materials.

Provided is a battery pack that can uniformly cool a plurality of electric cells, prevent a breakdown of the electric cells, and provide high performance of all electric cells. The battery pack includes a packaging case in which: each adjacent ones of a plurality of electric cells in the first direction define a ventilation space; first and second passages are defined that extend in the first direction and that are arranged to have the plurality of electric cells located between the first and second passages in a second direction intersecting the first direction, wherein gas supplied to the first passage flows through the ventilation spaces to the second passage; and a flow rate limitation device is provided that is arranged in an upstream area of the first passage and that limits a flow rate of the gas flowing through one of the plurality of ventilation spaces, which leads to the upstream area of the first passage, to a predetermined flow rate.

A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.

The invention provides a 3D NAND storage device and a manufacturing method thereof. After a stacked layer is formed, a sacrificial layer in the stacked layer is replaced with a gate layer by a gate line slit, secondly, a dielectric material is filled in the gate line slit, and an array co-source doped region is extracted from a back side of a substrate. The dielectric material is filled in the gate line slit, common source contact is formed on the back side of the substrate, a parasitic capacitor between the gate line slit and a word line is eliminated, breakdown between the word line and the common source contact is avoided, and device performance is improved.

The invention relates to a solution to a working power supply and the power of a two-wire-system electronic switch, relating to the field of illuminating electronic switches. The two-wire-system electronic switch comprises an off-state electrification circuit, a switch executive circuit, an on-state electrification circuit, and the like, wherein when loads are closed, the off-state electrification circuit supplies working electric energy for the electronic switch and also eliminates the sparkling phenomenon of a load lamp; the switch executive circuit is used for executing the starting or the closing of the loads, not only has low power consumption, but also provides the switch state indication; and when the loads are started, the on-state electrification circuit provides a heavy current path for the loads and also supplies the working electric energy for the electronic switch. The invention not only solves the problem on the working power supply of the two-wire-system electronic switch, but also enhances the loading capacity of the two-wire-system electronic switch.

The invention discloses Beidou and GPS (Global Positioning System) dual-mode timing embedded time synchronization equipment and a software design method. The Beidou and GPS (Global Positioning System) dual-mode timing embedded time synchronization equipment takes a programmable logic device, a Beidou receiver, a GPS receiver and an embedded microcontroller as a core, and is also provided with an external hardware circuit integrated serial port, an IRIG-B (Inter-Range Instrumentation Group) code input isolation module, an IRIG-B (DC(Direct Current)) code differential output module, an IRIG-B (AC(Alternating Current)) code hardware output module and an IRIG-B (AC) code input decoding module, wherein the embedded microcontroller is connected with an embedded key and a liquid crystal display; an IRIG-B code system is designed by utilizing the programmable logic device and the embodied microcontroller; the current modes, the current time information and the mode states of the five modes, namely, GPS, Beidou, DC code decoding, AC code decoding and time keeping are integrated into a code stream, is transmitted to the embedded microcontroller, is subjected to serial port processing, and is displayed on the liquid crystal display; the requirement on integrating the functions of multi-satellite timing, high-precision time synchronous code encoding outputting and inputting decoding, as well as real-time time information display and mode switching is met.

A vacuum high temperature heater tube includes a refractory steel outer guard tube and a hot wire, in which, a mixed filling layer is set between the surrounding of the hot wire and the guard tube, a seal casing cap is set at the line end, an insulation porcelain base is set out of the seal casing cap, a screw cutting sleeve is set at the outer end of the insulation porcelain base and the back of the cutting sleeve is fixed to the outer wall of the guard tube. The production technology includes: cleaning the guard tube, drying, removing hydrogen, winding the carbon hot wire on a stainless steel rod in twist and putting it at the center of the guard tube, filling a matched MgO compound material uniformly and vibrating it to draw out the stainless steel rod steadily to be filled, shrinking the tube, heating it to 150deg.C for 1 hour to be vacuumed and removing moisture till 500Kohm insulation resistance, filling a seal casing cap, pressing tightly the insulation porcelain base with the screw cutting sleeve to be welded with the outer wall of the guard tube, shaping, testing and verifying and packing the product.

The invention discloses an IGBT active clamping protection circuit, and the circuit is a part of an IGBT drive protection circuit. The circuit comprises an IGBT (insulated gate bipolar transistor) and a push pole connected with a gate pole of the IGBT. The circuit also comprises a capacitor clamping circuit, a dynamic feedback circuit, and a static feedback circuit, and a collector electrode of the IGBT is connected with the positive electrode of a DC bus. The dynamic feedback circuit mainly consists of a first transient voltage inhibition diode, a feedback capacitor, and a first diode, and the static feedback circuit is connected between an output end of a clamping capacitor and the gate pole of the IGBT. The circuit guarantees that a switching-off voltage peak value of the IGBT is less than a maximum allowable value of an collector electrode during overcurrent switching-off and short-circuit protection. The circuit not only can accurately clamp an overvoltage, but also can guarantee the dynamic and static balance of voltage of an active circuit, is smaller in loss, is high in response speed, is simple in structure, is high in reliability, and can be used for the design of an IGBT drive protection circuit under various working conditions.

An apparatus for sensing leakage current of a battery includes a voltage distribution node installed on a first conductive line connecting both terminals of a battery; first and second switches installed between the voltage distribution node and positive / negative terminals of the battery; an insulation resistance and a current sensing resistance installed on a second conductive line connecting the voltage distribution node to a ground; a DC voltage applying unit for applying positive / negative DC voltage to a ground-side end of the current sensing resistance to induce potential difference between the voltage distribution node and the DC voltage applying node; and a leakage current determining unit for sensing magnitude of electric current flowing through the current sensing resistance according to the induced potential difference in turning-on state of the switches, and then determining leakage current by checking whether the magnitude of electric current is out of standard level over threshold value.

The invention discloses a liquid crystal display and a control method thereof. A time schedule controller is used for detecting an external frequency signal of the liquid crystal display, and a switching control signal is output according to the external frequency signal to start a power-off switching circuit, so that the power-off switching circuit controls the output voltages of a gamma voltagegenerator and a common voltage circuit according one of the messages of the switch control signal respectively; thus, the voltage difference between a pixel electrode of a pixel and a common electrode is regulated to reach zero to completely release the pixel loads after the power off so as to realize the aim of instantly eliminating shutdown images.

The invention discloses a biasing circuit suitable for a low noise amplifier. The biasing circuit is connected with a common source NMOS (N-channel metal oxide semiconductor) pipe in the low noise amplifier and two pins externally connected with a grid electrode on a common gate NMOS pipe. The biasing circuit is characterized by being formed by connecting and combining 1-12 MOS (metal oxide semiconductor) pipes (401-406, 410-415), 1-8 resistors (416-423) and 1-3 diodes (407-409). The biasing circuit suitable for the low noise amplifier has an enabling control function and can provide two modes of output bias, wherein in the first mode, the bias is provided in a working mode of the low noise amplifier, temperature compensation and voltage compensation of superwide range are realized, namely the condition that noise coefficients and gains of the low noise amplifier do not fluctuate along with the temperature and power voltage; and in the second mode, the other bias is provided in an idle mode of the low noise amplifier, reliability compensation is realized, so that the condition that a transistor is broken down is prevented. With the adoption of the biasing circuit suitable for the low noise amplifier, the complexity of the circuit can be greatly reduced, and the chip area and cost are reduced.

The invention relates to an improved method for manufacturing a bamboo / wood recombined material. The method comprises the following steps of: (1) forming the parallel connection between the load of bamboo wood and a high-frequency oscillation circuit of a high-frequency generator; (2) placing a bamboo recombined material or wood recombined material board blank 7 in the space formed among middle pressure boards 5 and among the middle pressure boards, a lower machine frame 1 and a pressure head 10 in the event of processing; and (3) thermally pressing and gluing at high frequency, specifically comprising: (1) preparing for unit materials; (2) drying the unit materials; (3) gumming and drying again; (4) assembling; (5) pre-pressing and packaging; and (6) heating and gluing at high frequency.The method disclosed by the invention has the advantages that: the problem that surface adhesive becomes fragile because of being excessively solidified or the poor gluing phenomenon because core adhesive is not solidified can be avoided; the good gluing quality is achieved by using lower pressure; the formation gluing pressure of the bamboo / wood recombined material is less than or equal to 8 MPa; and the thermal pressing and gluing period is short.

An object of the invention is to prevent breakdown of a decoder buffer, and shorten a time required for a multiplexing operation. A multiplexing pattern generator 56 generates a multiplexing pattern signal indicating the order of types of data to be multiplexed. A video remaining size calculator 33 and an audio remaining size calculator 43 calculate, as a remaining size, the size of multiplexable data of an elementary stream. A video packet generator 32 and an audio packet generator 42 generate a multiplex packet containing transmission data of a predetermined size, based on the multiplexing pattern signal and the remaining size. A multiplexer 51 generates a multiplexed stream. The video remaining size calculator 33 and the audio remaining size calculator 43 calculate the remaining size, based on the data size per access unit and the transmission size of transmission data. The video packet generator 32 and the audio packet generator 42 generate a multiplex packet, if the data type indicated by the multiplexing pattern signal shows matching, and the remaining size is equal to or larger than the transmission size.

A light source driving circuit for driving a light emitting element comprises a power supply circuit, a light adjusting circuit, and a feedback circuit / control circuit, wherein the power supply circuit is coupled with one end of a light emitting element; the light adjusting circuit is coupled with the other end of the light emitting element; and the feedback circuit / control circuit is coupled between the power supply circuit and the light adjusting circuit. When the light source drive circuit turns off the power supply circuit to stop supplying power to the light emitting element, the feedbackcircuit / control circuit delays the time point for switching off the light adjusting circuit so as to prevent the light adjusting circuit from being broken down by over-high voltage.

A multilayer circuit board and a manufacturing method for producing the board via simple manufacturing processes employing a droplet jetting method, where the inter-layer insulating film can be easily made flat. The multilayer circuit board includes at least two wiring layers, an inter-layer insulating film provided between every adjacent two of the wiring layers, and conductive posts for providing electrical conductivity between the wiring layers. The manufacturing method includes the step of forming the inter-layer insulating film by changing the film thickness of the inter-layer insulating film according to a concavo-convex shape of an area where the inter-layer insulating film is formed, so as to level an upper surface of the inter-layer insulating film. The concavo-convex shape may be computed based on design data of a circuit pattern for forming the wiring layers and the conductive posts, or may be measured before the inter-layer insulating film is formed.

The invention discloses an array substrate, a liquid crystal display device and a repairing method of the liquid crystal display device, relates to the liquid crystal display field and aims at improving the yield of products. The array substrate comprises an active display area and a peripheral lead area. Leads are formed at the peripheral lead area; a repair line is formed at the relevant position of each lead in the peripheral lead area; all the repair lines are electrically connected with a public electrode; and an insulating layer is arranged between the layer on which the leads are located and the layer on which the repair lines are located. The scheme disclosed by the invention is suitable for the production of liquid crystal display panels and liquid crystal display monitors.

The invention discloses a dust-removing air purifier with double functions of anion sedimentation and high-voltage electrostatic adsorption. The dust-removing air purifier comprises a casing as well as an anion emission needle plate, a stacked high-voltage electrostatic cell, a positive pole filtering body and a fan which are sequentially arranged, wherein anion emission needles which discharge towards the positive pole filtering body and form potential difference with the positive pole filtering body are arranged on the anion emission needle plate, the stacked high-voltage electrostatic cell comprises negative plates and positive plates, an air channel is formed between each negative plate and the adjacent positive plate, each negative plate comprises two insulators with high resistance and high voltage resistance and a conductor which is located between the two insulators and has low resistance, and the positive plates have electrical conductivity and can lead out charges carried by electronegative particles directly contacted with the positive plates in the air channels. According to the dust-removing air purifier, the wind resistance is low, the use noise is small, frequent cleaning is not required, single air purification efficiency is high, bacteria and viruses in air can be killed, the problems about wall blackening and influence on human health are solved, and secondary pollution caused by starting up is avoided.

A flyback power converter and electronic apparatus suitable for synchronous rectification are disclosed. The flyback power converter includes a voltage transformer, a main switch, a synchronous rectification switch, a synchronous rectification control circuit, a sampling circuit and an operation circuit. A control end of the main switch receives a main switch signal so as to control the main switch. The synchronous rectification control circuit transmits control signal to control end of the synchronous rectification switch according to sensing signal received. The sampling circuit samples the state of the synchronous rectification switch so as to generate first logic signal and second logic signal. The operation circuit executes timing for charging / discharging according to the first and the second logic-signal, so as to output switch cut-off pulse signal to a voltage-dividing circuit. If voltage of the sensing signal is lower than predetermined threshold voltage, the synchronous rectification switch enters into cut-off state according to the control signal.

The invention provides a sample heating apparatus used for a rock impact experiments as rock SHB and combined static-dynamic load and the like. and belongs to the rock mechanics study field. The apparatus comprises an adjusting slideway (9), a locating bolt (10), a resistance wire (11), leveling bolts (12), a bracket (13), a power-supply switch (14), an adjustable insulation bin-door (15), a thermocouple access hole (16), a heating cavity (17), a carbon-fiber reinforced alloy cylinder (18) and an insulation bin (19). The invention adopts the anti-impact and anti-high-temperature carbon-fiber reinforced alloy cylinder, the adjustable insulation bin-door and four leveling bolts at the seat of the apparatus to realize the synchronous processes of preserving the constant high temperature and the loading of impact stress wave during the rock impact experiment. The invention provides a special experimental apparatus for the further rock mechanics study.

The invention relates to a digital intelligent driving device of a high-power IGBT (insulated gate bipolar translator). The digital intelligent driving device comprises a DC / DC (direct-current) conversion circuit, a CPLD (complex programmable logic device) logic control module, an active clamping feedback module, a retreating-protection over-current feedback module and a two-stage di / dt detecting module, wherein the output end of the DC / DC conversion circuit is connected with an undervoltage protection module; the output end of the undervoltage protection module is connected with the CPLD logic control module; and the input end of the CPLD logic control module is connected with a PWM (pulse-width modulation) pulse-width modulator, and the output end of the CPLD logic control module is connected with a variable-gate resistance module. The digital intelligent driving device provided by the invention has the advantages that the protection functions such as power isolation, over-current protection, di / dt and active clamping are integrated, the logic control is realized by adopting the programmable logic device CPLD, the ideal driving performance is achieved by real-time variable-gate resistance driving, and soft shut-off is realized by selecting proper shut-off resistance according to the over-current degree, so that the switching loss is effectively reduced and a Miller effect is weakened.

An embodiment of the invention provides an array substrate, a display panel and a display device, aiming to solve the problem that when the existing display panel is squeezed or rubbed, a great quantity of electric charges can be accumulated in integrated circuits thereof to be even possible to break down the same, thereby resulting damages to the integrated circuits in the display panel. The array substrate comprises multiple data lines and multiple gate lines; at least one data line is connected with a first lead on the array substrate through at least one first electrostatic discharger, each first electrostatic discharger is connected with one data line only; or at least one gate line is connected to a second lead on the array substrate through at least one second electrostatic discharger, and each second electrostatic discharger is connected one gate line only.

An amplifier system is provided that has a first balun with an input and an output, and a second balun with an input and an output. A first set of amplifiers is coupled in series and to the output of the first balun. A second set of amplifiers is coupled in series and to the output of the second balun. The first and second sets of amplifiers are in series or parallel. A load impedance of the first and second sets of amplifiers does not substantially change at an output of any amplifier that is switched on when another amplifier is switched off.

The invention provides a switch control circuit, a chip, an adaptor and a switch control method. The switch control circuit is used for generating a power supply control signal and controlling a switch circuit to be connected in a delay way by detecting a first electrical signal reflecting power supply of a load and controlling the control switch circuit to be disconnected by detecting a second electrical signal reflecting an electrical signal in a power conversion circuit, and a part of electrical devices in the switch control circuit are maintained working according to the power supply control signal. By controlling the switch circuit to be connected in the delay way and starting power supply of a part of electrical devices in the switch control circuit within a delay period, light-loadpower supply can be timely and reliably achieved by employing a low-power consumption mode during a light-load period of the adaptor.

A low side control circuit and a high side control circuit are disposed in first and second n type well regions, respectively. A third n type well region is formed around the second n type well region. The first n− type well region is formed outside the second n− type well region. A p type well region is formed around the third n− type well region. The third n− type well region and the p type well region constitute an HVJT between the first and second n type well regions. A p+ type contact region and a first electrode supplied with GND potential are formed in the p type well region. In the p type well region, an n+ type contact region and a second electrode supplied with L-VDD potential higher than the GND potential are formed between the HVJT and the p+ type contact region.

The invention provides a micro-fluid chip and a biology detection device and method, and relates to the field of biology detection. The micro-fluid chip comprises a first substrate, a second substrate, a first electrode, a second electrode, a first dielectric layer, a second dielectric layer, a first hydrophobic layer and a second hydrophobic layer, wherein the first substrate and the second substrate are opposite, the first electrode and the second electrode are opposite between the first substrate and the second substrate, the first electrode comprises multiple spaced first electrode units,the second electrode comprises multiple spaced second electrode units, each first electrode unit is opposite to the corresponding second electrode unit, the first dielectric layer and the second dielectric layer are located between the first electrode and the second electrode, the first hydrophobic layer and the second hydrophobic layer are located between the first dielectric layer and the seconddielectric layer, and a gap is formed between the first hydrophobic layer and the second hydrophobic layer. Compared with the prior art, driving voltage applied to the micro-fluid chip can be lower,and therefore, the risk that the chip is broken down can be reduced.