50results about How to "Prevent breakdown" patented technology

The invention provides a fireproof leaky cable and a preparation method thereof, and relates to the technical field of cables. The fire-resistant leaky cable sequentially comprises a conductor wire core, an insulating layer, an outer conductor layer, a fire-resistant layer and a sheath layer from inside to outside, the fire-resistant layer is a mica tape, the mica tape comprises an adhesive, and the adhesive is organic silicon resin. The sheath layer is of a double-layer structure and comprises a ceramic polyolefin layer and a flame-retardant polyolefin layer, the ceramic polyolefin layer wraps the outer side of the fireproof layer, and the flame-retardant polyolefin layer wraps the outer side of the ceramic polyolefin layer. According to the technical scheme, the fire-resistant layer, the ceramic polyolefin layer and the flame-retardant polyolefin layer are sequentially coated outside the outer conductor layer to construct an echelon synergistic fire-resistant system, so that the fire-resistant leaky cable has excellent mechanical performance and relatively high fire-resistant capability.

The application provides a semiconductor device and a manufacturing method thereof. The method comprises: forming a drift layer on a substrate; forming a first epitaxial layer on the drift layer, doping a partial region of the first epitaxial layer to form a shielding region, and the first epitaxial layer not doped is a first doped region; forming a second epitaxial layer on the first epitaxial layer, doping a partial region of the second epitaxial layer to form a first contact region, and the second epitaxial layer not doped is a second doped region; forming a third epitaxial layer on the second epitaxial layer, doping a first region of the third epitaxial layer to form a second contact region, doping a second region of the third epitaxial layer to form a source region, and the third epitaxial layer not doped is a body region; forming a trench gate structure, an interlayer dielectric layer and a source metal layer. The application makes the shielding region electrically connected with the source metal layer, so that the shielding region potential is clamped by the source, thereby effectively inhibiting the electric field peak at the trench corner in the blocking state.

The utility model provides a butt joint assembly, a butt joint device and cable maintenance equipment, the butt joint assembly can be at least used for butt joint and separation of an inspection robot and a high-altitude cable, and the butt joint assembly comprises a frame which is provided with a containing space for containing the inspection robot and a side opening allowing the high-altitude cable to enter the containing space; the butt-joint frame is arranged on the frame-shaped frame and used for guiding the aerial cable to enter the containing space from the side opening and positioning the aerial cable at the butt-joint position of the aerial cable and the inspection robot; and the connecting frame is connected to the frame-shaped frame, located above the frame-shaped frame and used for being connected with an aircraft. According to the butt joint assembly of the structure, lateral butt joint with a high-altitude cable is achieved through translation, when an inspection robot is put into the two lower wire harnesses in the three wire harnesses distributed in the shape like the Chinese character'pin ', the unmanned aerial vehicle can be prevented from being too close to the upper wire harnesses, the unmanned aerial vehicle cannot be broken down by an electromagnetic field of the upper wire harnesses any more, and the inspection robot can be put into the inspection robot. And the working safety of the unmanned aerial vehicle and the inspection robot is remarkably improved.

The utility model discloses a composite armored semi-rigid dust cover for an automobile constant velocity universal joint. The universal joint dust cover mainly solves the problem that the universal joint dust cover is poor in physical damage resistance. The protective cover is characterized in that a protective layer (2) made of metal is connected with the hoop and arranged on the circumferential outer side of the cover body; and the surface coating (3) is arranged on the outer wall of the cover body and is used for reflecting infrared rays. The utility model provides a composite armored semi-rigid dust cover for a constant velocity universal joint of an automobile, which is provided with a protective layer made of metal to prevent flying stones on a road surface and prevent the dust cover from being broken down; and the ceramic-based reflecting coating is sprayed on the surface, so that the infrared wave band is mainly prevented, the infrared radiation absorption rate of the cover body is reduced by 40% to the maximum, and the cover body failure caused by excessive heat absorption of the cover body is avoided.

This invention relates to a substrate clamping circuit for a bidirectional power device, wherein the sources of a first switching transistor and a second switching transistor are connected together and to the substrate of the bidirectional power device; the drain of the first switching transistor is connected to the first source of the bidirectional power device, and the drain of the second switching transistor is connected to the second source of the bidirectional power device; the gate of a third switching transistor is connected to its own source through a third resistor, its drain is connected to the second source, and its source is connected to the gate of the first switching transistor; the gate of a fourth switching transistor is connected to its own source through a fourth resistor, its drain is connected to the first source, and its source is connected to the gate of the second switching transistor; the source of the third switching transistor is also connected to the substrate of the bidirectional power device through a first resistor, and the source of the fourth switching transistor is also connected to the substrate of the bidirectional power device through a second resistor. This invention enables the substrate potential to be maintained near the lower potential of the source.

This utility model relates to the field of filter element clogging and flushing, specifically to a waste oil precision filter element clogging and flushing assembly. It includes a flushing filter tank, a main body for flushing the filter element, an inner sliding groove formed on the inner wall of the flushing filter tank, and an inner sliding plate for internal sliding connection. Each inner sliding plate has a positioning groove on its upper surface, and a positioning block is embedded inside the positioning groove. This utility model includes a waste oil filter element, a tank cover, a vacuum pump, a self-cleaning air rod, an inner flushing chamber, an outer flushing chamber, a chemical tank, and a cleaning water tank. When using this waste oil precision filter element clogging and flushing assembly, the vacuum pump first provides a certain amount of gas to the self-cleaning air rod. The self-cleaning air rod passes through the inner cleaning head inside the waste oil filter element, impacting some of the dirt adhering to the filter element. The gas impact removes loose dirt from the filter element surface, reducing the load on subsequent processing.

The invention provides a multi-suspension shield grid MOSFET and a preparation method thereof, a shield grid is divided into a left part, a middle part and a right part, the left part and the right part are symmetrically distributed along the middle part, the upper part width of the middle part is larger than the lower part width, and the top of the middle part is higher than the tops of the left part and the right part. The middle part of the shield gate is connected with a source electrode, the left and right parts are floating, in a blocking state, the left and right floating shield gates can improve electric field distribution in the middle of a drift region, the thicker field oxide layer at the bottom can bear a higher electric field, and device breakdown at the bottom of the shield gate electrode is avoided. The output capacitance Coss contributed by the shield gate electrode is reduced while the reliability is improved, the switching loss is reduced, and the on-resistance is lower when the withstand voltage is the same.

An electromagnetic device belongs to the technical field of low-voltage apparatuses. Comprising a frame, a coil framework and a coil, the coil is wound on the coil framework, the coil framework is contained in the frame, the frame axially limits the coil framework through cooperation of a top plate and a bottom plate, the side, facing the top plate, of the coil framework is provided with a top disc, and the side, facing the bottom plate, of the coil framework is provided with a bottom disc. A positioning piece for preventing the coil framework from rotating is arranged between the top disc and the top plate, an isolation area is arranged on the coil framework, the isolation area is arranged on the top disc, and the edge of the isolation area extends out of the top plate, or the isolation area is arranged on the bottom disc, and the edge of the isolation area extends out of the bottom plate. The side face, facing the coil, of the isolation area is provided with a wire groove for wiring of outgoing lines of the coil. The coil framework has the advantages that on the basis of preventing the coil framework from rotating relative to the framework, the isolation area is arranged at the position of the coil outgoing line so as to effectively guarantee the distance between the outgoing line and the framework, and product miniaturization is facilitated while the working reliability is improved.

This application discloses an array substrate and a mobile terminal. The array substrate includes a substrate, a first metal layer, an insulating layer, and a second metal layer. The first metal layer includes a gate, a first metal trace connected to the gate, and a first electrode. One end of the first metal trace includes a connection portion, which is disposed opposite to one end of the first electrode. The insulating layer has multiple adapter holes located above the connection portion. The second metal layer includes a source / drain electrode corresponding to the gate and a second metal trace. One end of the second metal trace is connected to a driving circuit, and the second metal trace is connected to the first metal trace through the adapter holes. A shielding trace is disposed between the connection portion and the first electrode, and the shielding trace partially surrounds the end of the first metal trace. This application can effectively prevent the accumulation of charge between long traces with opposite ends during the manufacturing process. When the charge accumulates too much, ESD occurs, causing the released charge to break down the insulating layer and cause a short circuit between the originally unconnected lines.

This utility model provides an anti-breakdown corona silicone roller, comprising: a roller body, a support tube for quick installation of a silicone sleeve fixed to the outer side of the roller body by a fixing ring, a fixing ring respectively provided at the left and right ends of the roller body, a silicone sleeve fixed to the outer wall of the support tube, the support tube including two arc plates for fixing and supporting the silicone sleeve, and a connecting plate fixed to the upper and lower sides between the two arc plates respectively. Compared with the prior art, this utility model has the following beneficial effects: by setting a ceramic layer with a thickness of 0.2-0.5mm on the outer wall of the silicone sleeve, it helps to improve the service life of the silicone sleeve; by adding a support tube and fixing rings between the roller body and the silicone sleeve, the installation and removal of the silicone sleeve becomes simple, eliminating the need to spend a lot of time and multiple people to complete the installation and removal of the silicone sleeve, thus improving the convenience of installation and removal of the silicone sleeve.

The utility model provides a battery end cover structure, a battery and electric equipment, the battery end cover structure comprises: an end cover body provided with a pole mounting hole; at least part of the pole component is arranged in the pole mounting hole in a penetrating manner; the connecting piece is connected with the end cover body and the pole assembly; when the battery is in a normal working state, the connecting piece is connected with the end cover body and the pole assembly in an insulating manner; and when the battery is in a reverse high-voltage loading state, the connecting piece is conductively communicated with the end cover body and the pole assembly. Therefore, the connecting piece presents different characteristics in different states, so that the connecting piece presents a conductive characteristic in a reverse high-voltage loading state of the battery, the end cover body is conductively communicated with the pole assembly, and reverse high voltage is transmitted to the end cover body through the connecting piece by the pole assembly; therefore, the insulation between the electrode assembly and the battery shell is prevented from being broken down after high voltage is borne in the battery, and safety accidents such as battery fire and the like are further avoided.

The application discloses a manufacturing method of a high-heat-dissipation-efficiency pouring type driving transformer, and belongs to the technical field of power electronic equipment manufacturing. The method aims to solve the technical problems of low heat dissipation efficiency and insufficient long-term reliability of the existing driving transformer caused by the limited heat conduction performance of the pouring material, the simple surface heat dissipation structure and the difficult coordination of internal thermal stress. The method comprises the following steps: constructing a three-dimensional digital model of a reinforced heat dissipation structure with a boss array and a groove array and preparing a corresponding forming die; positioning a magnetic core and a winding as an insert in a die cavity; pouring insulating colloid with different mechanical and heat conduction properties in batches in a vacuum environment; through a segmented curing process, the flexible colloid is fully filled in the internal gap and buffers the stress, and at the same time, the high-heat-conduction rigid colloid forms an external main body and a heat dissipation structure, thereby forming an integrated pouring body. The method is used for manufacturing the driving transformer suitable for high-power-density and high-heat-dissipation scenes, and can significantly improve the heat dissipation capacity and operation reliability of the driving transformer.

The utility model discloses a secondary voltage withstanding tester for high-voltage power equipment, which is used for secondary voltage withstanding test. The ceramic shell is of a box body structure with a top opening, and the top opening of the ceramic shell extends towards the side face of the ceramic shell to form a notch; the support assembly is rotationally arranged on the side, away from the opening, of the ceramic shell, the support assembly comprises a rotary disc connected with the ceramic shell and a mounting disc arranged on the side, away from the ceramic shell, of the rotary disc, and a plurality of support units annularly and evenly arranged in the circumferential direction of the mounting disc at intervals are arranged on the side, away from the rotary disc, of the mounting disc; through the arrangement of the ceramic shell, an enough insulation effect can be provided without influencing personnel operation, and through the arrangement of the support assembly, the device can be effectively arranged outdoors or indoors needing to be installed.

This utility model discloses a crash beam structure that improves MPDB compatibility, including a main crossbeam with a B-shaped cross-section. The main crossbeam consists of a first cavity, a second cavity, and a third cavity. The first and second cavities are located at the upper and lower parts of the main crossbeam, respectively, and are closed cavities. The third cavity is located in the middle of the main crossbeam and is an open cavity with its opening facing rearward. A first reinforcing member is provided in the third cavity at the connection between the main crossbeam and the energy-absorbing box. The first cavity has an upward sloping surface at the rear of its cross-section, and the second cavity has a downward sloping surface at the rear of its cross-section. Two connecting plates are provided at the rear of the main crossbeam, and the energy-absorbing box is connected to the main crossbeam through the connecting plates. MPDB brackets are provided at both ends near the main crossbeam, and the MPDB brackets are located below the main crossbeam. This utility model improves MPDB compatibility and features structural stability and good safety.

The utility model discloses a special installation pipe fitting for stainless steel corrugated hose for gas delivery, which is designed based on GB / T26002-2025 standard and used for connecting indoor gas delivery pipeline of commercial and residential users. The pipe fitting is composed of a threaded connecting piece, a long-life sealing gasket, a fastening snap ring and a compression sleeve. Except the sealing gasket, the rest components are made of metal material, which can form low-resistance electrical connection of the gas pipeline and reduce the risk of failure caused by leakage of the burner. The fastening snap ring is connected at three equal points of a circular ring. After installation and fastening, the point connection points are automatically separated, which makes the pipe fitting not be disassembled again. This can prevent users from disassembling the pipe fitting privately and causing safety accidents, and ensure the reliability and safety of the connection of the gas delivery pipeline.

The invention relates to a printing machine (01) designed as a sheet-fed printing press (01), having at least one printing head (09) and a roll unwinding device (24), wherein the printing machine (01) is provided with a transport path for transporting a printing substrate (02), and wherein the printing machine (01) has a central cylinder (07) as a printing substrate guide element (07), the printing head (09) being arranged pointing towards the central cylinder, and wherein the printing machine (01) has a charging device (03) having at least one charging electrode (04) designed as a DC voltage electrode (04), and wherein the region of the transport path for transporting the printing substrate (02) which is adjacent to the charging electrode (04) is arranged before the printing point (11) defined by the printing head (09), and wherein the central cylinder (07) is earthed, and wherein the printing head (09) is earthed, and wherein the minimum distance (c) between at least one spray opening (12) of the printing head (09) and at least one charging electrode (04) is at least 20 mm.

This utility model relates to the field of low-voltage electrical appliance technology and discloses a circuit breaker. The circuit breaker provided by this utility model has a first partition and a second partition overlapping, increasing the creepage distance between the L-pole conductive system and the N-pole conductive system, preventing the circuit breaker from being broken down, and improving the dielectric properties of the L-pole conductive system and the N-pole conductive system. The first partition has a first groove on the side facing the N-pole mounting cavity, and the second partition has a second groove on the side facing the N-pole mounting cavity. The second groove communicates with the first groove to form a mounting groove. Two spaced-apart baffles are provided on the inner side of the base, and the two baffles are inserted into the mounting groove. The N-pole conductive arc-leading angle passes through the space enclosed by the baffles and the mounting groove, increasing the creepage distance between the N-pole conductive system and the L-pole conductive system. The circuit breaker provided by this utility model improves the internal insulation performance of the circuit breaker while meeting the installation width requirements of common distribution boxes, thereby ensuring user safety.

This application relates to a display panel, a backplane, and a display device. The display panel includes: a packaging structure and a driving backplane; the packaging structure includes: a first substrate, the first substrate including a first side and an opposing second side; a light-emitting unit disposed on the first side of the first substrate; a contact structure formed on the second side of the first substrate; the contact structure includes a plurality of concentrically arranged annular pins, the plurality of annular pins being connected to a plurality of pins of the light-emitting unit through a plurality of conductive vias in the first substrate; the driving backplane includes: a second substrate, one side of the second substrate having a plurality of first limiting portions; the second substrate having a first through hole in the axial direction of the first limiting portions; and first pad structures disposed within the plurality of first limiting portions and formed on the side of the second substrate near the first limiting portions. Using this display panel can reduce the difficulty of mass transfer of light-emitting chips.

The invention discloses a bias circuit suitable for high-voltage work, and relates to the technical field of integrated circuits. The bias circuit comprises a high-voltage clamping module, a starting control module and a bias generation module, wherein the high-voltage clamping module is connected with the starting control module; the starting control module is connected with the bias generation module; the high-voltage clamping module is used for receiving a power supply voltage and outputting a control voltage to the starting control module, and the control voltage is clamped to the sum of a gate-source voltage of an NMOS (N-channel Metal Oxide Semiconductor) tube and a break-over voltage of a triode through an NMOS tube and triode connecting structure of the high-voltage clamping module; the starting control module is used for receiving the control voltage and outputting starting current to the bias generation module according to the bias voltage; the bias generation module is used for receiving the starting current and constructing a current generation loop so as to generate bias current through the current generation loop; wherein the current generation loop is constructed at least based on a PMOS (P-channel Metal Oxide Semiconductor) tube structure of the bias generation module, and the grid voltage of the PMOS tube connected with the power supply is clamped in a mode that the grid and the drain of the PMOS tube are connected.

This invention belongs to the technical field of silicon-based piezoresistive high-pressure sensors, and specifically relates to a dual-island beam membrane high-pressure sensor chip and its fabrication method. The chip features a dual-island beam on a sensitive membrane; a set of piezoresistive strips are arranged on the upper surface of the dual-island beams, positioned along two center lines of the chip body; the dual-island beams include an island and an island, with their ends connected to the device layer, insulating layer, and support layer via a beam body; the upper surfaces of the islands are flush with the upper surface of the beam body; this significantly enhances the lateral and longitudinal stress difference in the stress concentration area, making the stress concentration effect more pronounced, improving the sensor's sensitivity, and ensuring reliable measurement results under various operating conditions.

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes: a semiconductor substrate comprising an active region and a termination region, the termination region surrounding the active region; wherein the termination region comprises: a first field-limiting ring located within the semiconductor substrate and surrounding the active region; and a cutoff structure comprising a second field-limiting ring and a metal field plate located on the second field-limiting ring, the second field-limiting ring being located within the semiconductor substrate and surrounding the outside of the first field-limiting ring, the second field-limiting ring having the same ion doping type as the first field-limiting ring. The semiconductor device provided by this invention can balance the requirements of low cost and high reliability.

The application discloses an overhead insulated cable with an anti-icing coating layer and relates to the technical field of insulated cables, which comprises a cable body and a connecting terminal. The anti-pulling mechanism comprises a plurality of anti-pulling ropes, a cylindrical cage formed by the plurality of anti-pulling ropes and a plurality of arc-shaped ropes, and the cylindrical cage is axially straightened by being extruded and fixed with the aluminum conductor through the connecting terminal. The anti-pulling mechanism further comprises two semicircular blocks which are linked through an outer ring, an inner ring and the semicircular blocks, and are further matched with protrusions and connecting blocks to form secondary extrusion locking of the anti-pulling ropes and the aluminum conductor. The anti-pulling mechanism can realize the cooperative fixing and force transmission of the aluminum alloy core and the cylindrical cage. When the overhead insulated cable is subjected to external forces such as wind load and icing in a long-term process, the overhead insulated cable will not have hidden troubles such as loose fixing, disengagement of the aluminum alloy core, the added anti-pulling structure and the terminal, the service life of the overhead insulated cable is prolonged, and the high requirements of the safe operation of the power grid are met.

This utility model discloses a control circuit for a smart door lock, a smart door lock, and a door. The control circuit includes a USB interface, a charging circuit, and a control unit. The USB interface includes a charging port and a communication port. The charging port is connected to the charging circuit, and the communication port is connected to the control unit. When the charging port is connected to a solar panel, the solar panel charges the smart door lock. When the communication port is connected to a testing device, the testing device tests the smart door lock. This technical solution, by setting up a USB interface with both a charging port and a communication port, allows the smart door lock to be functionally tested without disassembling the outer casing. This effectively avoids the risk of dust and moisture entering the control board and causing short circuits during testing, improving the convenience of testing and the reliability of the equipment.

The utility model provides a semiconductor device and electronic equipment. The semiconductor device includes a substrate and a gate structure. Wherein the substrate is provided with active regions and isolation regions, the isolation regions are arranged between the adjacent active regions, and the active regions are arranged between the adjacent isolation regions; the active region is provided with a groove, and the groove is filled with a semiconductor material for forming a source electrode or a drain electrode. The gate structure is arranged on the surface of the substrate and is arranged in the active region, and the end part of the gate structure extends to the isolation region connected with the active region. The gate structure comprises a gate and a side wall arranged on the side surface of the gate, an insulating protection layer is arranged on the surface of the isolation region, and the insulating protection layer covers the residual surface of the substrate except the gate structure in the isolation region; and the side wall extending to the isolation region is connected with the substrate. The insulating protection layer can protect the isolation region from being corroded, so that the side wall of the gate structure can keep higher integrity, and the semiconductor device can keep higher reliability and longer service life.

The invention provides a 2.5 D interposer exposed copper preparation process and a packaging structure, and relates to the technical field of semiconductor packaging. The process comprises the following steps: providing a substrate with a conductive column; wherein the substrate comprises a first surface and a second surface which are oppositely arranged, and one end, close to the first surface, of each conductive column protrudes out of the first surface of the substrate; the substrate is provided with a module mounting area and a framework area. And forming a protective layer on the first surface, wherein the protective layer covers the first surface and the conductive columns. Forming a first opening in the protective layer in the module mounting area; forming an insulating layer in the first opening; and forming a first dielectric layer covering the insulating layer and the protective layer. Grinding the first dielectric layer and the insulating layer to expose the end face of the conductive column; and forming salient points electrically connected with the conductive columns. The protection of the conductive column is facilitated, the fracture of the conductive column is prevented, the risks of layering and subfissure of the insulating layer in the cutting process are reduced, and the product quality is improved.

This application belongs to the field of semiconductor technology and provides an LDMOS device and its fabrication method. The LDMOS device includes: a semiconductor substrate, a buried oxide region, a P-type well region, a source region, a P-type base region, a drain region, a drift region, a gate oxide layer, a gate region, a source electrode, a drain electrode, a gate electrode, and a gate extension region. By setting a gate extension region between the gate region and the drain electrode, a low-resistance, high-concentration electron channel from the drain region to the source region can be formed above the drift region, thereby reducing the on-resistance of the LDMOS device. Furthermore, by alternating the semiconductor substrate and the drift region, breakdown caused by electric field spikes formed within the device is avoided. Thus, while increasing the breakdown voltage of the LDMOS device, the on-resistance is reduced, solving the problem of existing LDMOS devices failing to achieve a balance between breakdown voltage and on-resistance.

This utility model relates to the field of current transformer manufacturing technology, and in particular to an auxiliary support component for fixing current transformer coils and its manufacturing mold. It includes a support body main body, positioning holes, an outer limiting part, an inner limiting part, a slot, and multiple support points. The support points form point contact support with the inner cavity of the mold, and the positioning holes and cylindrical pins have a clearance fit, optimizing insulation distance and installation accuracy. The manufacturing mold includes: a left mold part, a right mold part, a slot forming part, a positioning hole forming part, a support point forming part, an adjustment component, an injection port, and a mold base, which can adapt to different size requirements. This application can avoid the breakdown problem caused by traditional support methods, improve the product's appearance quality and electrical performance, while simplifying the production process, increasing efficiency, and reducing costs.

This invention discloses a non-destructive transfer and positioning stacking method and apparatus for large-size thin electrode sheets, belonging to the field of energy storage device manufacturing technology. It solves the core problems of existing stacking technologies, such as friction damage to the electrode active layer and electrode displacement caused by tooth pulling. The apparatus includes a transfer receiving tooth mechanism, a clamping mechanism with an edge, a non-contact positioning and detection mechanism, and a stacking support platform. The method includes: suspended loading positioning, non-contact positioning, edge clamp locking, frictionless tooth pulling, and precise placement cycle. This invention, by only supporting and clamping the electrode insulation edge area, combined with a suspended frictionless tooth pulling design, achieves zero contact with the active layer and zero friction damage throughout the process, with a stacking accuracy of ±0.05mm. It is suitable for the mass production of large-size thin electrodes from 0.5 to 1.2m, perfectly meeting the manufacturing requirements of high-voltage multilayer series energy storage devices, and significantly improving the yield, cycle life, and operational stability of energy storage devices.

The utility model discloses an invisible body armor which comprises a body armor main body, and the body armor main body sequentially comprises a textile layer and a thermal infrared shielding layer from inside to outside. Containing bags are arranged on the front side and the rear side of the bulletproof vest body, bulletproof pieces are inserted into the containing bags, and each bulletproof piece is sequentially provided with a self-repairing coating, a buffering layer and an anti-impact layer from outside to inside. The bullet-proof sheet adopts the self-repairing layer, the buffer layer and the impact-resistant layer, has a certain self-repairing function, can effectively repair bullet holes, has a certain buffer effect, reduces damage, improves hardness, enhances impact resistance and prevents breakdown. In addition, the thermal infrared shielding layer is arranged on the outer layer, the similar surface temperature difference between the thermal infrared shielding layer and the external environment can be maintained, infrared detection is prevented, and the stealth effect is achieved.

The application provides a ferroelectric transistor structure and a preparation method thereof. The ferroelectric transistor structure comprises a bottom substrate, a ferroelectric layer, an insulating dielectric layer and a top substrate which are sequentially arranged on the surface of the bottom substrate in a direction away from the bottom substrate, a field effect transistor on the top substrate, and a control electrode penetrating through the top substrate and electrically connected with the ferroelectric layer, wherein the control electrode is used for controlling the ferroelectric layer. The application can improve the integration of the ferroelectric transistor, and reduce the structural complexity and the preparation difficulty of the ferroelectric transistor.