10results about How to "Reduce field strength" patented technology

Embodiments of the invention provide a write head for perpendicular recording in which the magnetic field intensity applied at a read element is reduced with larger write-field gradients and the distance between a write element and a read element is small. In one embodiment, a pair of magnetic bodies for shielding a read element are provided on the leading and trailing sides of the read element respectively and whichever one of the two shields is the longer in the length from the air bearing surface is shorter than the length up to the back contact position PBK at which a main pole and an auxiliary pole are connected.

The invention relates to a microwave source device in the technical field of high-power microwaves, in particular to an L-band compact relativistic Cerenkov microwave generating device, and belongs to the technical field of high-power microwaves. Comprising a cathode structure, an external electromagnetic structure and an internal electromagnetic structure, and the cathode structure comprises a cathode seat and a cathode; the external electromagnetic structure comprises an anode outer cylinder, an outer cut-off neck, outer conductor ripples, a collector, a collector baffle and a solenoid coil; the internal electromagnetic structure comprises an inner cut-off neck, an inner conductor ripple, a short circuit block and a microwave output port; the whole structure is rotationally symmetrical about a central axis; through reasonable design of an electromagnetic structure, a coaxial non-uniform double-ripple slow-wave structure is adopted to enhance beam-wave coupling, a high-efficiency beam-wave effect is realized in a relatively short period, and a coaxial collector structure is adopted to improve the resonance characteristic of the slow-wave structure to reduce the axial size, so that miniaturization and compactness of the device are realized.

The utility model relates to the field of high-voltage electrical equipment, and provides an isolating contact, which comprises a moving contact, a shielding cover and an insulating cylinder, the shielding cover and the insulating cylinder are sleeved outside the moving contact, a screw rod mechanism is arranged in the moving contact, a conductor with high voltage is connected outside the moving contact, the shielding cover is arranged in the insulating cylinder, and the insulating cylinder is arranged in the insulating cylinder. The shielding case comprises a first shielding case, a second shielding case and a third shielding case which are arranged at intervals; the first shielding case is connected with the conductor in a high-voltage mode, the lead screw mechanism drives the moving contact to move towards or away from the second shielding case and the third shielding case, so that the moving contact is connected with the second shielding case and the third shielding case in a high-voltage mode, the field intensity in the air cavity is effectively reduced, partial discharge is reduced, and the compression strength is improved. The gap between the second shielding cover and the first shielding cover and the gap between the second shielding cover and the third shielding cover form a shielding fracture, the function of circuit breaking is achieved, and the electric field can be effectively shielded by setting the reasonable fracture length.

The invention provides a separated terminal structure and a preparation method thereof, and the method comprises the steps: forming a first field plate and a second field plate in a first groove and a second groove respectively through a substrate, a first groove disposed in the substrate, and a second groove spaced from the first groove by a preset distance; the first field plate comprises a first oxide layer and a first polycrystalline silicon layer which are sequentially deposited in the first groove, the second field plate comprises a second polycrystalline silicon layer located in the middle area of the second groove and a third polycrystalline silicon layer symmetrical about the second polycrystalline silicon layer, and the second polycrystalline silicon layer, the third polycrystalline silicon layer and the substrate are isolated through isolation parts. The isolation part is an oxide, and in the epitaxial growth direction, the length of the second polycrystalline silicon layer is smaller than that of the third polycrystalline silicon layer, specifically, the second polycrystalline silicon layer is connected with the source electrode to work, so that the field intensity of a trench oxide layer of a terminal field plate can be effectively reduced, the depletion effect is improved, and a depletion line in a terminal region is smoother.

The invention provides a high-frequency transformer which comprises a magnetic core, a primary winding and a secondary winding, the magnetic core is provided with a frame body and a wrapping post located in the middle of the frame body, the primary winding and the secondary winding are wrapped by an insulation structure, the primary winding is composed of a plurality of first turns which are connected in series, and the secondary winding is composed of a plurality of second turns which are connected in series. The secondary winding is composed of a plurality of second turns which are connected in series, the first turns and the second turns are arranged around the wrapping post in an alternate stacking mode, and the first turns and the second turns are arranged in a staggered mode on the section perpendicular to the winding direction; by arranging the turns of the adjacent layers in a staggered mode, the inter-turn distance can be increased, stray capacitance and field intensity are further reduced, the semi-conductive layer is further arranged outside the insulation structure, the voltage or field intensity of the area is further reduced, and the requirement of the high-frequency transformer is met.

The invention discloses an anti-radiation power field effect transistor and a manufacturing method thereof.The field effect transistor comprises a gate structure layer, an epitaxial layer and a substrate layer which are arranged in a stacked mode in the first direction, and a plurality of first conductive structure regions, a plurality of JFET regions and a plurality of second conductive structure regions are arranged on the side, close to the gate structure layer, in the epitaxial layer; in the first direction and the second direction, the thickness and the width of the second conductive structure regions are smaller than those of the first conductive structure regions, each JFET region is arranged between the adjacent first conductive structure regions, and each second conductive structure region is correspondingly arranged in each JFET region; wherein the epitaxial layer and the JFET region have a first conductive type, and the first conductive structure region and the second conductive structure region both have a first conductive type region and a second conductive type region. According to the anti-radiation power field effect transistor and the manufacturing method thereof, the manufacturing process of the field effect transistor is relatively simple, the field effect transistor has relatively strong anti-radiation capability, and the performance of the field effect transistor can be ensured.

The application discloses a high-voltage direct-current GIL / GIS eccentric bus, a standard unit of which comprises a metal shell, a current-carrying conductor, a high-voltage shielding conductor, a support insulator and a concentric insulator, the concentric insulator is installed at both ends of the metal shell, and the current-carrying conductor is arranged in the metal shell; the current-carrying conductor comprises an eccentric section and a concentric current-carrying conductor, the eccentric section is connected with the concentric current-carrying conductor at both ends, and the axis of the concentric current-carrying conductor is coaxial with the axis of the metal shell; the eccentric section comprises a plurality of eccentric current-carrying conductors, the axis of the eccentric current-carrying conductor is parallel to and located above the axis of the metal shell, the plurality of eccentric current-carrying conductors are connected into the eccentric section through the high-voltage shielding conductor, the eccentric current-carrying conductor at the end of the eccentric section is connected with one end of a concentric current-carrying conductor through a corner unit, the other end of the concentric current-carrying conductor is connected with the concentric insulator, and the high-voltage shielding conductor is connected with the metal shell through the support insulator. The application can inhibit the surface charge accumulation of the support insulator.

The present invention relates to the field of semiconductor device packaging, and in particular to a high-voltage silicon carbide photoconductive switch with eccentrically facing circular electrodes. The photoconductive switch provided by the present invention comprises a silicon carbide semi-insulating wafer, an input electrode and an output electrode. The input electrode and the output electrode are arranged eccentrically facing each other on both sides of the wafer, and a plurality of concentric circular annular grooves of different diameters are arranged around the electrodes, respectively, and a passivation layer is provided on the annular grooves. The present invention prolongs the edge distance between the input electrode and the output electrode on the wafer surface by setting the annular grooves, greatly reduces the risk of flashover breakdown along the wafer edge, reduces the field strength at the electrode edge, and improves the electric field uniformity by setting the electrodes facing each other, avoiding electric field distortion at the moment of conduction, thereby improving the voltage resistance and reliability of the photoconductive switch.

The application relates to the technical field of graphene, in particular to a graphene material and a preparation method and a preparation device thereof, the preparation method comprises the following steps: preparing an electrolysis system, including an anode, a cathode and an electrolyte, a first extension direction of the anode intersects with a second extension direction of the cathode; graphite is used as the anode to perform an electrolysis reaction, and the graphite is driven to move along the first extension direction to adjust the distance between the anode and the cathode; as the distance between the anode and the cathode decreases, the current density on the surface of the graphite gradually increases; the graphite is first subjected to electrochemical intercalation and then subjected to electrolytic exfoliation to obtain a graphene dispersion liquid; the graphene dispersion liquid is subjected to purification treatment to obtain graphene. In the preparation method, the electrochemical intercalation and the electrolytic exfoliation reaction on the graphite are performed in sequence, the prepared graphene material has a high few-layer (carbon layer number is less than or equal to 5) rate, and the types and contents of oxygen-containing functional groups can be controlled.

The present invention relates to a C4F7N environmentally friendly gas ring main unit, comprising a gas box, the gas box is filled with a mixed gas of C4F7N and CO2, a busbar insulator, a main busbar, a load switch, a branch busbar and an outgoing line insulator are installed in the gas box, the busbar insulators are two, the two busbar insulators are respectively installed on two opposite inner walls of the gas box, the two busbar insulators are connected through the main busbar, the main busbar is connected to the load switch, the load switch is connected to a plurality of branch busbars, and each branch busbar is connected to an outgoing line insulator. The C4F7N environmentally friendly gas ring main unit is mainly matched with the insulation and breaking performance of the C4F7N and CO2 mixed gas, and the structural design and arc extinguishing grid load switch design are performed to meet the safe operation of the switchgear.