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3results about How to "Reduce field strength" patented technology

Magnetic recording head and magnetic disk storage apparatus mounting the magnetic head

InactiveUS20050141142A1reduce distanceImprove recording densityHeads using thin filmsManufacture of flux-sensitive headsContact positionUltimate tensile strength
Embodiments of the invention provide a write head for perpendicular recording in which the magnetic field intensity applied at a read element is reduced with larger write-field gradients and the distance between a write element and a read element is small. In one embodiment, a pair of magnetic bodies for shielding a read element are provided on the leading and trailing sides of the read element respectively and whichever one of the two shields is the longer in the length from the air bearing surface is shorter than the length up to the back contact position PBK at which a main pole and an auxiliary pole are connected.
Owner:WESTERN DIGITAL TECHNOLOGIES INC

High voltage direct current gil / gis eccentric bus

ActiveCN117038231BIncrease the insulation distance along the surfaceIncrease insulation distance
The application discloses a high-voltage direct-current GIL / GIS eccentric bus, a standard unit of which comprises a metal shell, a current-carrying conductor, a high-voltage shielding conductor, a support insulator and a concentric insulator, the concentric insulator is installed at both ends of the metal shell, and the current-carrying conductor is arranged in the metal shell; the current-carrying conductor comprises an eccentric section and a concentric current-carrying conductor, the eccentric section is connected with the concentric current-carrying conductor at both ends, and the axis of the concentric current-carrying conductor is coaxial with the axis of the metal shell; the eccentric section comprises a plurality of eccentric current-carrying conductors, the axis of the eccentric current-carrying conductor is parallel to and located above the axis of the metal shell, the plurality of eccentric current-carrying conductors are connected into the eccentric section through the high-voltage shielding conductor, the eccentric current-carrying conductor at the end of the eccentric section is connected with one end of a concentric current-carrying conductor through a corner unit, the other end of the concentric current-carrying conductor is connected with the concentric insulator, and the high-voltage shielding conductor is connected with the metal shell through the support insulator. The application can inhibit the surface charge accumulation of the support insulator.
Owner:XI AN JIAOTONG UNIV +3

Graphene material and preparation method and device thereof

ActiveCN117800325BControllable typesThe content is easy to controlCellsGrapheneElectrolytic agentCarbon layer
The application relates to the technical field of graphene, in particular to a graphene material and a preparation method and a preparation device thereof, the preparation method comprises the following steps: preparing an electrolysis system, including an anode, a cathode and an electrolyte, a first extension direction of the anode intersects with a second extension direction of the cathode; graphite is used as the anode to perform an electrolysis reaction, and the graphite is driven to move along the first extension direction to adjust the distance between the anode and the cathode; as the distance between the anode and the cathode decreases, the current density on the surface of the graphite gradually increases; the graphite is first subjected to electrochemical intercalation and then subjected to electrolytic exfoliation to obtain a graphene dispersion liquid; the graphene dispersion liquid is subjected to purification treatment to obtain graphene. In the preparation method, the electrochemical intercalation and the electrolytic exfoliation reaction on the graphite are performed in sequence, the prepared graphene material has a high few-layer (carbon layer number is less than or equal to 5) rate, and the types and contents of oxygen-containing functional groups can be controlled.
Owner:SHENZHEN BTR SODIUM BATTERY NEW MATERIAL TECHNOLOGY CO LTD