Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Distributed feedback injection amplification semiconductor laser

A distributed feedback and semiconductor technology, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve problems affecting the stability of amplified lasers, and achieve the effects of ensuring power stability, beam quality, and convenient operation

Inactive Publication Date: 2008-08-06
WUHAN INST OF PHYSICS & MATHEMATICS CHINESE ACADEMY OF SCI
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this product is quite strict on the current control accuracy of the tapered laser amplifier, and the fluctuation of the current directly affects the stability of the amplified laser.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Distributed feedback injection amplification semiconductor laser
  • Distributed feedback injection amplification semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Below in conjunction with accompanying drawing, the present invention is described in further detail:

[0030] According to Figure 1, it can be seen that the tapered amplified semiconductor laser consists of six main lasers A, the first optical isolator B, the tapered laser amplifier C, the second optical isolator D, the weak light detection laser power stabilization system E and the laser shaping system F Partial composition. The main laser A includes the current temperature control interface 2, the main laser base 4, the main laser adjustment seat 5, the thermoelectric cooling package module 6, the distributed feedback semiconductor laser tube 7, the main laser collimation lens adjustment seat 8, and the main laser collimation lens 9 . The first optical isolator B includes an optical isolator base 10 , a Glan Taylor prism 12 , an optical rotator 11 and a Glan Taylor prism 13 . The conical laser amplifier C includes a conical laser amplifier base 14, a conical laser ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a distributed feedback injection amplifying semiconductor laser, consisting of a main laser, a first light isolator, a taper laser amplifier, a second light isolator, a tiny light exploring laser power stabilization system and a laser shaping system, wherein, the main laser adopts a distributed feedback semiconductor laser tube, the collimated laser beam is injected into a taper laser amplifying chip passing through the first light isolator, the amplified laser adopts the beam splitting technique passing through the second light isolator, an electrophotonic detector detects the fluctuation of power of the amplified laser, the error signal is sent to a current control interface of the taper laser amplifier through a feedback circuit, the power stability of the laser is outputted after the error signal is amplified by a reverse feedback mechanism, the light outputs the collimated Gaussian beam through the laser shaping system. The distributed feedback injection amplifying semiconductor laser has compact structure, convenient adjustment, wide and narrow laser rays, high power, good stability and strong practicability.

Description

technical field [0001] The present invention relates to a semiconductor laser, more specifically to a distributed feedback injection amplification semiconductor laser, the present invention [0002] The invention is applicable to the fields of laser cooling, atom trapping, laser spectroscopy, nonlinear optics, etc. Background technique [0003] In 1917, Einstein proposed the concept of stimulated radiation. In the 1950s, Soviet scientists Basov and Prokhorov published the paper "Realization of Three-level Particle Population Inversion and Suggestions for Semiconductor Lasers", which provided the basis for the development of lasers. Appears to provide a theoretical basis. In 1960, Melo of the Hughes Laboratory in California developed the world's first ruby ​​laser. He used ruby ​​crystals as the luminescent material and pulsed xenon lamps with high luminous density as the laser pump source. After years of hard work Obtained the first laser beam in history with a wavelength ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01S5/12H01S5/026H01S5/06
Inventor 李润兵陈立熊宗元王谨詹明生
Owner WUHAN INST OF PHYSICS & MATHEMATICS CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com