The application provides a preparation method of a flat
femtosecond laser oversaturated
doping device, a method and a
detector, and belongs to the technical field of photoelectricity, comprising a
femtosecond laser, an electro-optic
shutter, a second half-wave plate, a second Gartai Taylor
prism, a focusing lens and a closed
processing cavity arranged in sequence,
sulfur film is plated on the surface of
silicon as a
dopant by using a thermal
evaporation method, and the number of
processing pulses is accurately controlled by using the electro-optic
shutter, so that arbitrary
pulse number processing is realized, and uncontrollable random influences caused by
surface energy localization and
hatching effect are inhibited. The surface of the flat oversaturated
doping silicon material prepared by the application is compatible with modern
semiconductor industrial technology, is beneficial to the development of
silicon-based series photoelectric devices and promotes the development of CCD and
CMOS focus plane devices. In addition, the light
responsivity of the flat oversaturated
doping silicon detector prepared by the application exceeds 1A / W in the 350-1200nm
wave band, and
ultraviolet enhancement and sub-bandgap
infrared detection are simultaneously realized.