This invention relates to a method and apparatus for testing the polarization
deflection angle of a
semiconductor laser, belonging to the field of
semiconductor laser performance testing technology. It solves the technical problems of low efficiency and cumbersome calculations in testing the polarization
deflection angle of
semiconductor lasers. The testing method includes the following steps: installing and starting the semiconductor
laser; testing the power of the light emitted after passing through the Glan-Taylor
prism PBS and the power of the light emitted without passing through the Glan-Taylor
prism PBS; adjusting the fixture to a
fixed angle and testing the power of the light emitted through and without passing through the Glan-Taylor
prism PBS; and calculating the polarization
deflection angle of the semiconductor laser based on the power of the emitted light at different angles. The testing apparatus includes a fixture, a convex lens, a Glan-Taylor prism PBS, and an
optical power meter. The laser sequentially enters the convex lens and the Glan-Taylor prism PBS, and the
optical power meter is used to test the power of the light emitted after and without passing through the Glan-Taylor prism PBS.