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160 results about "Laser linewidth" patented technology

Laser linewidth is the spectral linewidth of a laser beam. Two of the most distinctive characteristics of laser emission are spatial coherence and spectral coherence. While spatial coherence is related to the beam divergence of the laser, spectral coherence is evaluated by measuring the laser linewidth of the radiation. Although the concept of laser linewidth can have varied theoretical descriptions, this article provides a simple experimental perspective. One of the first methods used to measure the coherence of a laser was interferometry. An alternative approach is the use of spectrometry.

Frequency-stabilizing device of fiber-optical grating external cavity semiconductor laser and its frequency-stabilizing method

InactiveCN1341986ASolving wavelength tuningAddressing AC ModulationLaser detailsOptical multiplexFrequency stabilizationPartial reflection
The invention relates to a technique field of frequency stabilization of laser light source. It consists of laser source, acetylene gas absorption chamber, and servo-feedback controller. The laser source as a semiconductor laser with optical fiber grating outer cavity is composed of semiconductor laser tube core in quanta trap F-P type and an optical fiber grating. A reflection reducing coating is coated on the coupling end surface of the tube core and optical fiber grating. The other end of the optical fiber grating is linked to a collimator. There are two pieces of piezoelectric ceramics end to end on the two ends of the optical fiber grating. The two input ends of phase locking amplifier in the servo-feedback controller are connected to the output end of light sensor and sine signal source respectively. The one end of the signal source and the high voltage drive are connected to a phase locking amplifier; with the other end connected to said two pieces of piezoelectric ceramics. There is an isolator and a partial reflector located on the optical path between the collimator and the acetylene gas absorption chamber. The invention possesses the advantages of higher stability in frequency, very narrow laser line-width as well as simple structure and higher stability in mechanics.
Owner:TSINGHUA UNIV

Apparatus for measuring ultra narrow laser line width by Brillouin optical fibre ring laser and measuring method

The invention is a device and measuring method for using Brillouin optical fiber circle laser to measure linewidth of ultra-narrow laser, which relates to a measuring device and method for laser linewidth. The output of the laser source is connected to the input of the isolator, the output of the isolator is connected to the input of the fiber coupler, the output of the coupler is connected to the inlet of the fiber coupler, the output of the fiber coupler is connected to the input of the photoelectric diode, the output of the photoelectric diode is connected to the input of the frequency spectrum analyzer, the fiber circular cavity is formed by connection one end of the aperture circle made up of unimodular fiber and the port of the fiber coupler, another end of the aperture circle is connected to the port three of the coupler. The method is: the laser needed to be measured is sent into the fiber circle cavity, when the power of the laser needed to be measured reach the threshold of SBS, it generates a first order Stokes light in the coupler, when the power of the first order stokes light reach the SBS threshold, it generates the second order stokes light in the coupler, then the second order stokes light and the laser needed to be measured frequency are analyzed by the frequency spectrum analyzer, and the linewidth can be acquired.
Owner:HARBIN INST OF TECH

Asymmetric phase shift grating-based narrow linewidth DFB (Described Feedback) semiconductor laser

The invention relates to an asymmetric phase shift grating-based narrow linewidth DFB (Described Feedback) semiconductor laser which comprises a buffer layer, a lower waveguide layer, a multiple-quantum well active layer, a grating layer, an upper waveguide layer, a package layer, a contact layer, a P electrode and an N electrode, wherein the lower waveguide layer is manufactured on the buffer layer, the multiple-quantum well active layer is manufactured on a lower package layer, the grating layer is manufactured on the multiple-quantum well active layer, the upper waveguide layer is manufactured on the grating layer, the package layer is manufactured on the upper waveguide layer, the contact layer is manufactured on the package layer, the P electrode is manufactured on the contact layer, and the N electrode is manufactured on the back surface of the buffer layer. The asymmetric phase shift grating-based narrow linewidth DFB semiconductor laser is capable of overcoming the influence of the outer reflected light to the inside of a laser device; and the laser linewidth is reduced, the frequency stability of the laser is increased and the effect of output power is improved.
Owner:山东中科际联光电集成技术研究院有限公司

Guided mode resonance grating narrow line width vertical-cavity surface emitting laser (VESEL) and preparation method thereof

InactiveCN107257084AHigh anti-bandwidthHigh inverse bandwidthLaser detailsLaser active region structureMicro nanoVertical-cavity surface-emitting laser
The present invention provides a guided mode resonance grating narrow line width vertical-cavity surface emitting laser and a preparation method thereof. According to the present invention, a guided-mode resonant effect of a micro-nano grating is utilized, and a sub-wavelength guided-mode resonant microcavity structure of high reflection and narrow resonance line width is used as a part of the vertical-cavity surface emitting laser, thereby achieving the purposes of narrower laser line width, wider high reflection bandwidth, smaller size and stable polarization control. According to the present invention, by utilizing the guided-mode resonant effect of the micro-nano grating, and by the equivalent medium theoretical calculation, a weak modulated sub-wavelength grating guided-mode resonant microcavity structure of which the resonant wavelength is 852 nm is designed, and a wall used for controlling the mode line width is added between a grating layer and a waveguide layer, so that the mode line width can reach 1 nm or less. Relative to a conventional VCSEL, the narrow line width vertical-cavity surface emitting laser has the narrower laser line width, the wider high reflection bandwidth, the smaller size and the stable polarization control.
Owner:BEIJING UNIV OF TECH

Distributed Brillouin optical fiber sensing system based on coherent detection

A distributed Brillouin optical fiber sensing system based on coherent detection comprises a pump laser and couplers. Lasers emitted by the pump laser are divided into two routes of detecting light through the first coupler. The first route of detecting light enters a Brillouin optical fiber annular laser device of a lower arm light path, and output Brillouin lasers serve as local oscillation light. The second route of detecting light enters a distributed Brillouin optical fiber sensor of an upper arm light path, and obtained backward Brillouin signal light with temperature and strain information serves as scattered light. After frequency mixing is conducted on the Brillouin signal light and the Brillouin lasers through the second coupler, the Brillouin signal light and the Brillouin lasers are connected to a photo-electric detector to undergo photo-electric conversion. The distributed Brillouin optical fiber sensing system based on coherent detection has the advantages that high nonlinearity optical fibers are adopted in the Brillouin optical fiber annular laser device, the output Brillouin lasers are small in line width and stable in frequency, and sensing precision is increased; the distributed Brillouin optical fiber sensor can measure temperature and strain signals at the same time, and therefore high-frequency detection is converted to low-frequency detection, cost is greatly saved, and system complexity is lowered.
Owner:武汉华之洋科技有限公司

Method for detecting emergent laser rays of laser level based on machine vision

The invention discloses a method for detecting the emergent laser rays of a laser level based on machine vision. The method comprises the following steps: 1) acquiring the data of a plurality of images of a plurality of horizontal or vertical laser rays in real time; 2) transmitting the image data to a PC; 3) preprocessing images; 4) detecting the positions of laser rays in every image and determining the information like the width of the laser rays; 5) fusing the related image information of the laser rays and determining whether the positional information of straight laser rays undergo emergent offset along top-to-bottom and left-to-right directions; 6) fusing the width information of the plurality of images of the laser rays and determining whether each laser ray is less than or equal to a prescribed diffraction angle so as to guarantee that width meets production requirements; and 7) displaying information indicating whether the laser level is qualified on a human-computer interface, presenting determination results and bases, and storing the number of the detected laser level and the widths, positions and other information of the detected laser level in every direction into a database. The method can realize precision identification of the positions of the laser rays and accurate measurement of the widths of the laser rays.
Owner:SHANGHAI UNIV

Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor

InactiveCN102324686AEnsure beam qualityThe result is obviousLaser detailsGratingAlkali metal
The invention discloses a semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor, wherein a linewidth compression system, a beam shaping and coupling system, a seed optical system and a power amplification system are sequentially connected; a semiconductor laser linewidth compression system which consists of a fast-axis collimation lens, two plano-convex lenses and a holographic grating is used, meanwhile a buffer gas with a determinate optimized pressure value is charged into a master oscillation pool in the seed optical system and an amplification pool in the power amplification system so as to broaden an alkali metal atomic absorption line; and the linewidth of an LDA (Laser Diode Array) can be effectively compressed to the magnitude of that of the broadened alkali metal atomic absorption line so as to realize the matching of the linewidth of the LDA and the alkali metal atomic absorption line. Pump lights are allocated to two gain medium pools, i.e. the master oscillation pool and the amplification pool, according to the proportion of 1: 4, and as the structures of the two oscillation pools are completely identical, the quality of beams is ensured and meanwhile the heat quantity is dispersed, and the power can be amplified over multiple times.
Owner:ZHEJIANG UNIV

Multi-section-type FP (FabryPerot) cavity single wavelength laser based on deeply etched grooves

ActiveCN102545045AReduce lossSimple and cheap production processLaser detailsLaser active region structureLine widthQuantum well
The invention discloses a multi-section-type (FabryPerot) cavity single wavelength laser based on deeply etched grooves. The laser disclosed by the invention is structurally characterized by at least comprising a laser waveguide, a first deeply etched reflecting surface and a second deeply etched reflecting surface which are respectively positioned at two ends of the laser waveguide, and a deeplyetched groove array arranged between the first deeply etched reflecting surface and the second deeply etched reflecting surface, wherein the deeply etched groove array is composed of 2-6 deeply etched grooves; the laser is manufactured on a semiconductor epitaxial wafer, and respectively comprises a lower cladding layer, a quantum well layer, an upper cladding layer and certain auxiliary layers among the lower cladding layer, the quantum well layer, the upper cladding layer layers from bottom to top; and the laser waveguide is divided into a plurality of sections of independent waveguides by the deeply etched groove array, the first deeply etched reflecting surface and the second deeply etched reflecting surface, each section of waveguide is covered with an electrode, and each electrode is respectively injected with a current so as to control the laser wavelength and power. Compared with the background technology, the laser disclosed by the invention has the advantages that the production process is simpler and cheaper due to only once epitaxial growth, the manufacturing error is smaller, the energy consumption for the apparatus operation is less, and the laser line width is narrower.
Owner:深圳市迅特通信技术股份有限公司 +1

Ultra-narrow-linewidth nonlinear gain amplification multi-wavelength fiber laser

The invention provides an ultra-narrow-linewidth nonlinear gain amplification multi-wavelength fiber laser, belongs to the technical field of photoelectric information and aims at solving the problem that an existing multi-wavelength fiber laser is large in output laser linewidth, complicated in system and poor in stability. The technical scheme is that light emitted by a high-power narrow-linewidthBrillouin pump is irradiated into a port a of an input / output circulator, and a port b of the input / output circulator is connected with a port j of a second coupler. A port m of the second coupler is connected with a polarization controller, and a port k and a port n are respectively connected with a port I and a port o of a single mode fiber. The polarization controller is connected with a reflection circulator. The other two ports of the reflection circulator are connected. A port c of the input / output circulator is connected with an Er-doped fiber, the Er-doped fiber is further connected with a first coupler, and the other two ports of the first coupler are connected. A port d of the input / output circulator is an output port. The ultra-narrow-linewidth nonlinear gain amplification multi-wavelength fiber laser has wide application prospect in the fields of dense wavelength division multiplexing optical communication systems, distributed optical fiber sensing and microwave photonics.
Owner:CHANGCHUN UNIV OF SCI & TECH

Optoelectronic feedback-based short-time delay laser linewidth measurement system and measurement method thereof

ActiveCN106092519AFast Linewidth MeasurementAutomatically adjust drive currentTesting optical propertiesPhase noiseBeam splitter
The invention discloses an optoelectronic feedback-based short-time delay laser linewidth measurement system. According to the thought of the system, the laser is used for acquiring laser signals s(t), an optical power beam splitter converts the laser signals s(t) into two paths of laser signals, reference light signals 0.5 s(t) and measurement light signals 0.5 s(t) are obtained, a time delay optical fiber carries out phase shift on the measurement light signals 0.5 s(t), measurement light signals s1(t) after phase shift are obtained, an optical coupler carries out coupling on the s1(t) and the reference light signals 0.5 s(t) to obtain combined laser signals sc(t), an optoelectronic detector carries out optoelectronic conversion on the sc(t) to obtain combined electric signals Id(t), an amplifier amplifies the Id(t), combined electric signals Vd(t) after amplification are obtained, a low-pass filter carries out low-pass filtering on the Vd(t), combined electric signals Vf(t) after low-pass filtering are obtained, a voltage-current converter contains set preset electric signals Vpre(t), the Vf(t) and the Vpre(t) are added for conversion from voltage to current, current signals are obtained, the current signals serve as working current of the laser to be sent to the laser, phase noise of the laser signals s(t) is acquired, and thus, a 3dB linewidth of a phase noise power spectrum for the laser signals s(t) is further calculated.
Owner:XIDIAN UNIV

Narrow-linewidth distributed feedback semiconductor laser and preparation method thereof

The invention provides a distributed feedback semiconductor laser which sequentially comprises an N-surface electrode layer, a substrate layer, a buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, a secondary epitaxial grating layer, an etching self-stop layer, a cladding layer, an ohmic contact layer, a passivation layer and a P-surface electrode layer from bottom to top. The cladding layer and the ohmic contact layer form a waveguide structure, and the waveguide structure is a ridge waveguide structure. An upper grating structure and a lower grating structure in the vertical direction are used for jointly feeding back mode selection. Secondary epitaxial gratings distributed near the active region are efficiently coupled with a light field so that frequencyselection and line width reduction are realized. The single reflection peak line width of the electrode sampling grating is narrow, the electrode sampling grating is fully coupled with a light field in the waveguide for feedback, the working wavelength can be further stabilized, the side-mode rejection ratio is improved, the line width factor is reduced and the laser line width is effectively narrowed.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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