Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor

A semiconductor and alkali metal technology, used in lasers, laser parts, electrical components, etc., can solve problems such as cavity mode and pump light imbalance, unstable output power, thermal lens effect, etc., to ensure beam quality and disperse heat. Effect

Inactive Publication Date: 2012-01-18
ZHEJIANG UNIV
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, there are two kinds of pumping methods for DPALs: horizontal pumping and longitudinal pumping, and both have achieved good results in experiments. However, when these two methods are pumped at high power, there are radial temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor
  • Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] Embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0015] As shown in the figure, the pumping light emitted by the semiconductor laser array 1 passes through the fast axis collimating mirror 2, the first plano-convex lens 3, the first half glass 4, and the second plano-convex lens 5, and then is reflected by the holographic grating 6 to the first plano-convex lens. After being reflected by a reflector 7, the pumping light is divided into two paths through the cylindrical lens 8, the third plano-convex lens 9, the fourth plano-convex lens 10 to the beam splitter 11, and the pumping light after passing through the beam splitter 11 passes through the first A convex lens 12 to the first polarization beam splitter 13, through the main oscillation pool 14 to the high reflection mirror 16, the light reflected by the high reflection mirror is incident on the first polarization beam splitter 13 after passing throu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor, wherein a linewidth compression system, a beam shaping and coupling system, a seed optical system and a power amplification system are sequentially connected; a semiconductor laser linewidth compression system which consists of a fast-axis collimation lens, two plano-convex lenses and a holographic grating is used, meanwhile a buffer gas with a determinate optimized pressure value is charged into a master oscillation pool in the seed optical system and an amplification pool in the power amplification system so as to broaden an alkali metal atomic absorption line; and the linewidth of an LDA (Laser Diode Array) can be effectively compressed to the magnitude of that of the broadened alkali metal atomic absorption line so as to realize the matching of the linewidth of the LDA and the alkali metal atomic absorption line. Pump lights are allocated to two gain medium pools, i.e. the master oscillation pool and the amplification pool, according to the proportion of 1: 4, and as the structures of the two oscillation pools are completely identical, the quality of beams is ensured and meanwhile the heat quantity is dispersed, and the power can be amplified over multiple times.

Description

technical field [0001] The invention relates to an alkali metal vapor laser, in particular to a MOPA system for a semiconductor pumped alkali metal vapor laser. Background technique [0002] Diode-pumped alkali vopor lasers (DPALs) pumped by diode laser arrays (LDA) are new laser devices that have aroused great interest and achieved rapid development in recent years. They have the advantages of small quantum loss and high thermal management performance. , is expected to obtain efficient high-power near-infrared laser output with high beam quality. These near-infrared lasers have broad application prospects in laser cooling, directional energy transfer, material processing, etc. Rubidium (Rb) and Cesium (Cs) are widely used as gain media. On the one hand, in order to obtain a high-power alkali metal vapor laser, it is necessary to use a high-power semiconductor laser array as a pump source, but the line width of the pump source is generally 3-4 times larger than the line wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S3/0941H01S3/00
Inventor 杨静潘佰良王亚娟
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap