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3results about How to "High side mode suppression ratio" patented technology

Narrow linewidth laser based on external cavity grating waveguide and DFB chip

PendingCN121965291ASalient filtering adequacySignificant line width compression effectLaser optical resonator constructionGratingLine width
The invention relates to the technical field of semiconductor lasers, in particular to a narrow linewidth laser based on an external cavity grating waveguide and a DFB chip. The high-reflection film is arranged on the left end surface of the DFB laser chip in a plating manner; the first antireflection film is arranged on the right end surface of the DFB laser chip in a plating manner; the grating optical waveguide chip is arranged on the right side of the DFB laser chip, and the left end face of the grating optical waveguide chip abuts against the right end face of the DFB laser chip; the second antireflection film is plated on the left end surface of the grating optical waveguide chip; the third antireflection film is plated on the right end surface of the grating optical waveguide chip; the grating optical waveguide chip comprises a waveguide substrate, and the waveguide substrate is made of an insulating transparent material. The method has the following beneficial effects: 1, the filtering sufficiency and the line width compression effect are remarkable; 2, the advantages of low loss and low power consumption are outstanding; 3, mode regulation and control are flexible, and stability and tunability are both considered; and 4, the compatibility is high.
Owner:JUGUANG KEXIN (HEFEI) OPTOELECTRONICS CO LTD

A filter based on a multimode subwavelength grating

ActiveCN117471608Breduce lossFlexible bandwidth adjustment rangeOptical waveguide light guideSpectral responseGrating
The application discloses a filter based on a multi-mode subwavelength grating. The filter comprises a mode demultiplexer for multiplexing and demultiplexing of a base mode and a high-order mode, a subwavelength grating for weakly binding regulation of a mode field of the base mode and the high-order mode, and a straight-through waveguide for output of the base mode. The application introduces a structure of the subwavelength grating and weakly binding regulation of the mode field, and by virtue of excellent flat dispersion regulation characteristics, the application realizes apodization of the grating while keeping consistent local refractive index of the grating, thereby obtaining the filter with high side mode suppression ratio and no free spectral range limitation, and the filter can realize flat and low-loss spectral response, meets the next-generation large-capacity and high-speed wavelength division multiplexing transmission demand, and has the advantages of simple structure, simple process, excellent performance and the like.
Owner:ZHEJIANG UNIV

Tunable surface emitting laser array and manufacturing method

ActiveCN115085010BTunable wavelength outputHigh side mode suppression ratioOptical wave guidanceLaser details
The invention discloses a tunable surface emitting laser array and a manufacturing method, comprising an N-surface electrode layer; an active epitaxial component is arranged on the N-surface electrode layer, two opposite sides of the top of the active epitaxial component are etched to form a ridge waveguide, the ridge waveguide comprises a convex portion located in the middle of the active epitaxial component and a concave portion located on both sides of the convex portion; an electrical isolation layer is grown on the upper surface of the concave portion and on both sides of the convex portion; and a P-surface electrode layer is grown on the active epitaxial component and the electrical isolation layer, the P-surface electrode layer is provided with a light-emitting hole, a plurality of photonic crystal holes are arranged in the light-emitting hole, and the plurality of photonic crystal holes are distributed in an array and penetrate the ridge waveguide; wherein the N-surface electrode layer, the active epitaxial component, the electrical isolation layer and the P-surface electrode layer form a plurality of array-distributed crystal units, the P-surface electrode layer at adjacent positions of two crystal units is etched to form an electrical isolation region, the spacings of the photonic crystal holes of different crystal units are different, so as to realize tunable wavelength output and provide a large-scale high-efficiency light source.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI