Electrostatic discharge protection structure and forming method and working method thereof
A technology of electrostatic discharge protection and gate structure, which is applied in the direction of circuits, electrical components, and electric solid devices, can solve the problems of poor performance of MOS tube electrostatic protection circuits, and achieve the effect of reducing the number of times and improving performance
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[0027] As described in the background art, the performance of the ESD protection structure in the prior art is poor.
[0028] figure 1 It is a schematic cross-sectional structure diagram of an electrostatic discharge protection structure, please refer to figure 1 , The electrostatic discharge protection structure includes: a substrate 100 having a well region in the substrate 100, the well region having first ions, the concentration of the first ions is a first concentration; a gate structure on the surface of the substrate 100 110; respectively located in the drain doped region 131 and source doped region 132 in the substrate 100 on both sides of the gate structure 110, the drain doped region 131 and the source doped region 132 have second ions, the The conductivity type of the second ion is opposite to that of the first ion; the electrostatic protection doped area 140 located at the bottom of the drain doped region 131, the electrostatic protection doped area 140 has the first i...
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