Thin film transistor and manufacturing method thereof, array substrate and display device

Abstract

The embodiment of the invention provides a thin film transistor and a manufacturing method of the thin film transistor, an array substrate and a display device, and relates to the technical field of display. The thin film transistor can solve the problem that the contact resistance exists between a source electrode and a semiconductor active layer and exists between a drain electrode and the semiconductor active layer, reduce the number of times of the picture composition technology and reduce the cost. The manufacturing method comprises the steps of forming a grid electrode, a grid insulating layer, the metal-oxide semiconductor active layer, the source electrode and the drain electrode on a substrate, wherein the formed metal-oxide semiconductor active layer comprises an indium-oxide series binary metal-oxide pattern layer making direct contact with the source electrode and the drain electrode, and a first pattern, a second pattern and a third pattern are included in the indium-oxide series binary metal-oxide pattern layer; using the insulating layer formed above the source electrode and the drain electrode as a barrier layer, adopting the ion implantation technology to implanting metal doping ions into the indium-oxide series binary metal-oxide pattern layer, conducting annealing treatment, converting the binary metal oxide of the third pattern into a polybasic metal-oxide semiconductor, and forming the metal-oxide semiconductor active layer. The thin film transistor is used for manufacturing the display device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof, an array substrate, and a display device. Background technique [0002] With the continuous increase of the size of the display and the continuous increase of the frequency of the driving circuit, the mobility of the existing amorphous silicon thin film transistor has been difficult to meet the demand. [0003] High-mobility thin-film transistors (Thin Film Transistor, TFT) include polysilicon TFTs and metal oxide TFTs. However, the uniformity of polysilicon TFT is poor, the manufacturing process is complicated, and it is limited by equipment such as laser crystallization, which is not conducive to large-scale production; while the metal oxide TFT has high mobility, good uniformity, transparency, and simple manufacturing process, which can be better. It satisfies the needs of large-sized liquid crystal displays (Liquid Cr...

AI Technical Summary

Problems solved by technology

When the energy barrier at the interface is large and a Schottky contact is formed, it is easy to cause signal loss, thereby affecting the performance of the TFT

[0005] In addition, during the preparation process of the existing metal oxide TFT, when the source and drain metal layers above the metal oxide semiconductor active layer are etched in the subsequent process, the metal oxide semiconductor may be damaged. The active layer is damaged, which leads to the deterioration of TFT performance; therefore, an etching stopper layer is also provided above the metal oxide semiconductor active layer to prevent the subsequent preparation process from possibly affecting the metal oxide semiconductor. source damage

However, the increase of the etch barrier layer will complicate the TFT manufacturing process and increase the cost

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