A kind of thin film transistor and its preparation method, array substrate, display device

Abstract

Embodiments of the present invention provide a thin film transistor and its preparation method, an array substrate, and a display device, which relate to the field of display technology, can solve the problem of contact resistance between the source, drain and semiconductor active layer, and can reduce the number of patterning processes ,cut costs. The preparation method includes forming a gate, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming a first pattern, a second pattern , the third pattern, and the indium oxide-based binary metal oxide pattern layer in direct contact with the source and drain; the insulating layer formed above the source and drain is used as a barrier layer, and ion implantation technology is used to inject the indium oxide The binary metal oxide pattern layer is implanted with metal doping ions and annealed to convert the binary metal oxide in the third pattern into a multi-component metal oxide semiconductor to form a metal oxide semiconductor active layer. Used in the manufacture of display devices.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof, an array substrate, and a display device. Background technique [0002] With the continuous increase of the size of the display and the continuous increase of the frequency of the driving circuit, the mobility of the existing amorphous silicon thin film transistor has been difficult to meet the demand. [0003] High-mobility thin-film transistors (Thin Film Transistor, TFT) include polysilicon TFTs and metal oxide TFTs. However, the uniformity of polysilicon TFT is poor, the manufacturing process is complicated, and it is limited by equipment such as laser crystallization, which is not conducive to large-scale production; while the metal oxide TFT has high mobility, good uniformity, transparency, and simple manufacturing process, which can be better. It satisfies the needs of large-sized liquid crystal displays (Liquid Cr...

AI Technical Summary

Problems solved by technology

When the energy barrier at the interface is large and a Schottky contact is formed, it is easy to cause signal loss, thereby affecting the performance of the TFT

[0005] In addition, during the preparation process of the existing metal oxide TFT, when the source and drain metal layers above the metal oxide semiconductor active layer are etched in the subsequent process, the metal oxide semiconductor may be damaged. The active layer is damaged, which leads to the deterioration of TFT performance; therefore, an etching stopper layer is also provided above the metal oxide semiconductor active layer to prevent the subsequent preparation process from possibly affecting the metal oxide semiconductor. source damage

However, the increase of the etch barrier layer will complicate the TFT manufacturing process and increase the cost

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