69results about How to "Avoid contact resistance" patented technology

Disclosed is a thin film transistor manufacturing method in which the process for opening contact holes has been simplified. Due to the removal in advance of a gate insulating film (115) which is formed on a gate electrode (110) not covered by a channel layer (120) of a TFT (100), the film thickness of the insulating film formed on the gate electrode (110) which is not covered by the channel layer (120) is the same as the film thickness of the insulating film formed on the source region (120a) and the drain region (120b). Therefore, it is possible to simultaneously open a contact hole (155) which reaches the surface of the gate electrode (110), a contact hole (135a) which reaches the surface of the source region (120a), and a contact hole (135b) which reaches the surface of the drain region (120b).

The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.

The invention relates to a composite-insulating-material frequency-domain dielectric spectroscopy testing apparatus comprising a shielding box, an electrode system and a frequency-domain dielectric spectroscopy instrument. The electrode system consists of a high-voltage electrode assembly, a measuring electrode assembly and a supporting assembly. When being tested, a sample is clamped and installed at one end of a support rod. The sample is arranged between a first electrode and a second electrode, wherein the first electrode, the second electrode, and the sample are spaced; the space among the first electrode, the second electrode, and the sample is filled with air dielectrics. The frequency-domain dielectric spectroscopy instrument applies voltages signals with different frequencies on the sample by the first electrode; and the second electrode is used for measuring a current signal flowing through the sample. Because the direct contact between the sample and surfaces of the first electrode and the second electrode is avoided, the contact resistance is avoided, so that the measurement error is reduced. The first electrode and the second electrode do not need to apply pressures on the surface of the sample, so that the sample deformation during measurement is avoided and thus the measurement accuracy of the complex dielectric constant of the sample is improved. With the shielding box, the interference signal from the electrode system is shielded to guarantee the high accuracy of the measurement result.

The present invention provides a method for fabricating a semiconductor device capable of preventing a contact resistance from increasing in a region contacted to an N-type conductive region during forming a conductive pattern directly contacted to the N-type conductive region including a conductive pattern and silicon, and preventing an increase in a parasitic capacity of the conductive pattern according to an increase in a thickness of a barrier layer.

The invention discloses a display panel and a manufacturing method thereof. In the display panel, an anode and a drain are integrated so as to avoid contact resistance between the anode and the drain,thereby reducing a metal annealing process. Moreover, the anode is made of a zinc oxide material superior to ITO in resistivity and light transmittance and easy to be subsequently etched, thereby reducing the on-resistance of the display panel and increasing the light reflection of the anode.

The invention discloses a turnbuckle type anti-side leakage hydrogen sensor outer shell structure which belongs to the air sensor field. The outer shell of the invention uses the turnbuckle type structure. The outer shell of the sensor and a flow combine plate are separately designed. The sandwich structure of a membrane electrode of two flow combine plates is positioned in the concave groove of the anode end of the outer shell, the cathode end of the outer shell is screwed in the concave groove of the anode end to close the shell body of the outer shell, and the flow combine plates and the membrane electrode are correspondingly clamped tightly. The structure of the sensor is screwed tightly and closed with each point stressed evenly, prevents the membrane electrode from being damaged and reduces contact resistance; furthermore the structure effectively prevents the tested air from side leaking without using two side sealing rings of the membrane electrode, simplifies the structure of the sensor, reduces production cost and improves the test precision. Moreover, the different materials of the outer shell and the flow combine plate can avoid a short circuit and the use of an independent flow combine plate facilitates the maintenance and replacement of components.

A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4) provided in the silicon carbide layer (2); an ohmic electrode (9) electrically connected with the high-concentration impurity region (4); a channel region electrically connected with the high-concentration impurity region; a gate insulating layer (14) provided on the channel region; and a gate electrode (7) provided on the gate insulating layer (14). The ohmic electrode (9) contains an alloy of titanium, silicon and carbon, and the gate electrode (7) contains titanium silicide.

The invention relates to a method for producing a silica-based condenser microphone. The method comprises the following steps of: A. providing a silicon substrate, and depositing an etching barrier layer on the silicon substrate; B. depositing a stress balancing layer on the etching barrier layer; C. depositing a vibrating diaphragm on the stress balancing layer; D. depositing a sacrificial layer on the silicon substrate, and etching latent images; E. depositing a backplate; F. caying out doping on the backplate to form a conductor; G. etching the backplate; and H. depositing an electrode, and performing ohmic contact.

A word line structure with a single-sided partially recessed gate structure. The word line structure includes a gate structure, a first gate spacer, and a second gate spacer. The gate structure includes a gate dielectric layer, a first gate layer, a second gate layer, and a gate capping layer and has a recess region adjacent to one of opposing sidewalls of the second gate layer. The first gate spacer is disposed over opposing sidewalls of the gate dielectric layer and the first gate layer. The second gate spacer is disposed over opposing sidewalls of the gate structure and covers the first gate spacer. A method for forming a word line structure with a single-sided partially recessed gate structure is also disclosed.

According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

The invention discloses a resistivity testing device capable of regulating the temperature, atmosphere and density of a powder material. Firstly, the equipment is small in volume and convenient, temperature regulation is performed through a constant-temperature zone of a tubular furnace, different electrodes are changed for connection at different temperatures and in different atmospheres, and direct contact resistance between the powder and a wire as well as the redox of an electrode at different temperatures and in different atmospheres is reduced, so that the accuracy of the test data is high; secondly, by adopting a straight-blowing gas supply way at the sealed bottom, direct contact between the gas and the powder as well as uniform gas distribution can be guaranteed, and uniform gas distribution is guaranteed and the problem of powder particle loss is solved through different numbers of gas guide plates; and finally, by adopting a screw type central pressurizing way and increasing the length of a pressurizing screw, uniform pressure distribution between the powder and the electrode can be guaranteed, the fixing stability is high, and the pressure is kept unchanged in the case of material expansion at a high temperature; and moreover, with the same powder mass, the resistivity of the powder of the same material and at different compaction densities is measured according to the rotation number of turns of the screw.

The invention provides a method for forming a micro-pattern in a semiconductor device. The method comprises the following steps: providing a substrate, forming a hard mask layer on the substrate, forming a first sacrificial layer on the hard mask layer, forming a second sacrificial layer on the first sacrificial layer, and forming a third sacrificial layer on the second sacrificial layer; firstly,forming a first dot pattern; forming a second dot pattern; forming a third dot pattern; and finally, etching the first sacrificial layer to form a micro-pattern. According to the method, the overlayprecision in the capacitor pattern manufacturing process is improved, the problems of contact resistance and parasitic capacitance are avoided, the product yield is greatly improved, and meanwhile themethod is simple in operation process, low in cost and short in period.

The invention discloses a turnbuckle type anti-side leakage hydrogen sensor outer shell structure which belongs to the air sensor field. The outer shell of the invention uses the turnbuckle type structure. The outer shell of the sensor and a flow combine plate are separately designed. The sandwich structure of a membrane electrode of two flow combine plates is positioned in the concave groove of the anode end of the outer shell, the cathode end of the outer shell is screwed in the concave groove of the anode end to close the shell body of the outer shell, and the flow combine plates and the membrane electrode are correspondingly clamped tightly. The structure of the sensor is screwed tightly and closed with each point stressed evenly, prevents the membrane electrode from being damaged andreduces contact resistance; furthermore the structure effectively prevents the tested air from side leaking without using two side sealing rings of the membrane electrode, simplifies the structure ofthe sensor, reduces production cost and improves the test precision. Moreover, the different materials of the outer shell and the flow combine plate can avoid a short circuit and the use of an independent flow combine plate facilitates the maintenance and replacement of components.