Electrode of p-type gallium nitride-based device as well as preparation method and application thereof

A gallium nitride-based and gallium nitride technology, which is applied to the electrode of p-type gallium nitride-based device and its preparation field, can solve the problems of increasing the height of the Schottky barrier, and solve the problem of increasing the height of the Schottky barrier. High, improve performance, reduce the effect of ohmic contact resistance

Pending Publication Date: 2021-10-08
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The electrode of the p-type gallium nitride-based device provided by the present invention is used for the source and drain of the p-type gallium nitride-based device, which solves the problem of oxidation of the metal layer in the electrode and also reduces the metal/semiconductor contact in the device. The Schottky barrier height of the surface, and through ultra-high vacu

Method used

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  • Electrode of p-type gallium nitride-based device as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Such as figure 1 As shown: this embodiment provides an electrode 4 of a p-type GaN-based device, the electrode 4 includes a nickel oxide layer 41, a platinum layer 42 and a gold layer 43 stacked in sequence, wherein the nickel oxide layer 41 It is a p-type structure, the platinum layer 42 is located in the middle of the nickel oxide layer 41 and the gold layer 43, the nickel oxide layer 41 is an ohmic contact layer of a p-type gallium nitride-based device, and the electrode is used for the device source and drain.

[0053] Wherein, the total thickness of the source electrode is 115nm, the thickness of the nickel oxide layer 41 is 10nm, the thickness of the platinum layer 42 is 30nm, and the thickness of the gold layer 43 is 75nm;

[0054] The total thickness of the drain electrode is 115 nm, the thickness of the nickel oxide layer 41 is 10 nm, the thickness of the platinum layer 42 is 30 nm, and the thickness of the gold layer 43 is 75 nm.

[0055] The preparation met...

Embodiment 2

[0062] The difference between this embodiment and Embodiment 1 is that in this embodiment, the electrodes are etched, a pit is formed in the electrode area, and then metal is deposited on the pit.

[0063] The preparation method of described electrode is as follows:

[0064] (1) Deposit a layer of 100nm thick silicon oxide on the p-type gallium nitride epitaxial structure as a hard mask, and spin-coat a layer of photoresist on the p-type gallium nitride included in the p-type gallium nitride epitaxial structure , and then after exposure and development, the source and drain regions of the p-type GaN-based device are exposed;

[0065] (2) Remove the silicon oxide covering the source and drain regions by ICP dry etching, then rinse the sample in step (1) with deionized water for 3 minutes, and finally dry it with nitrogen to clean off the photoresist;

[0066] (3) Soak the sample treated in step (2) in BEO for 3 minutes, then rinse with deionized water for 3 minutes, and blow d...

Embodiment 3

[0071] The difference between the electrode provided in this embodiment and Embodiment 2 is that, after the electrode is patterned, it will appear as etching holes distributed in a matrix with intervals in the electrode area.

[0072] The difference between this embodiment and embodiment 2 also includes, between step (2) and step (3), adding a step, the added step is:

[0073] After cleaning in step (2), spin-coat a layer of photoresist on the source and drain regions, and then expose and develop, so that the source and drain regions have multiple rectangles;

[0074] All the other preparation methods and parameters are consistent with Example 2.

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Abstract

The invention provides an electrode of a p-type gallium nitride-based device as well as a preparation method and application thereof. The electrode comprises a nickel oxide layer, a platinum layer and a gold layer which are sequentially stacked, wherein the nickel oxide layer is of a P-type structure, the platinum layer is located between the P-type nickel oxide layer and the gold layer, and the nickel oxide layer is an ohmic contact layer of the p-type gallium nitride-based device. The electrode of the p-type gallium nitride-based device is used for a source electrode and a drain electrode of the p-type gallium nitride-based device, more carriers flow between metal and a semiconductor by introducing a Schottky barrier height of the P-type NiO layer, the transition metal and the semiconductor interface, and meanwhile, by means of ultrahigh vacuum heat treatment, the problem that the height of the Schottky barrier is increased due to a Ga2O3 pollution layer is solved, the ohmic contact resistance of the source electrode and the drain electrode of the device is reduced, the performance of a p-type gallium nitride-based transistor is improved, the p-type gallium nitride-based device can play a greater role in a CMOS circuit, and the defect is changed into the advantage.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to an electrode of a p-type gallium nitride-based device, a preparation method and application thereof. Background technique [0002] Wide bandgap (WBG) semiconductors, such as silicon carbide SiC and gallium nitride GaN, are considered to be the most promising materials for next-generation power electronic devices. They rely on extraordinary physical properties, such as band gap >3ev, high critical electric field (2-4MV / cm) and low intrinsic carrier concentration (-〖10〗^(-10)〖cm〗^(-3) ), which can be used to make devices that can work at high pressure, high temperature and high frequency better than silicon materials. As the mainstream material of wide-bandgap semiconductor materials, GaN material has a special aspect that it can grow AlGaN / GaN heterostructures, and generate two-dimensional electron gas (2DEG) at the interface through piezoelectric polarization grad...

Claims

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Application Information

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IPC IPC(8): H01L29/45H01L29/417H01L21/28H01L29/778
CPCH01L29/452H01L29/401H01L29/4175H01L29/778
Inventor 唐楚滢杜方洲于洪宇汪青王祥卢宏浩武占侠
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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