This invention belongs to the field of
semiconductor technology, specifically providing a
gallium oxide insulated-gate bipolar
transistor (IGBT) power device, including a vertical device and a horizontal device. This invention uses
nickel oxide,
copper oxide, or
diamond as the P-type region, forming a
heterojunction structure with N-type
gallium oxide. During device operation, the
heterojunction on the high-potential side is forward-biased, allowing a large number of holes to be injected into the N-type
gallium oxide drift region. This introduces a
conductivity modulation effect in the drift region, achieving
high current density and low on-state
voltage drop, thus realizing the basic working principle of the IGBT device. Simultaneously, the horizontal IGBT introduces P-type
nickel oxide or
diamond with N-type
gallium oxide to form a superjunction structure with a high-
voltage drift region, achieving higher
breakdown voltage with the same drift region length, thus improving device performance. In summary, this invention, based on the principle of
heterojunction, proposes the concept of
gallium oxide IGBT for the first time, providing a new approach for the research of
gallium oxide high-
voltage, high-current power devices.