TFT LCD device having multi-layered pixel electrodes
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[0023]The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which a preferred embodiment of the invention is shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiment set forth herein. Like numbers refer to like elements throughout.
[0024]FIG. 3 is a top plan view showing a layout of pixel portions of a top gate type polysilicon TFT LCD device in accordance with one embodiment of the present invention. Referring to FIG. 3, it can be appreciated that in the top plan view, the pixel portions of the TFT LCD device of the present invention has the same structure as a general reflective or transmissive TFT LCD device. Namely, the TFT LCD device has an active region pattern 13 formed on a substrate, a gate insulating layer (15 of FIG. 4) formed on the active region pattern 13, and thin film transistors formed on the gate insulating layer 15. The thin film tran...
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