A kind of thin film transistor drive backplane and its manufacturing method, display panel

A technology for thin film transistors and driving backplanes, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as expensive capital, and achieve the effect of simplifying production steps, reducing the number of patterning processes, and saving production costs.

Active Publication Date: 2015-08-26
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing active matrix organic light-emitting diode panels, especially the thin-film transistor drive backplane used to drive the panel display, its manufacturing process is mainly to form thin-film transistors such as thin-film transistors on each thin-film layer through a patterning process. The graphics required by the device, which requires multiple patterning processes, usually requires more than seven patterning processes to complete, and the capital required for each patterning process is very expensive; therefore, for the production of thin film transistor drive backplanes, Reducing the number of patterning processes is a difficult problem restricting its development

Method used

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  • A kind of thin film transistor drive backplane and its manufacturing method, display panel
  • A kind of thin film transistor drive backplane and its manufacturing method, display panel
  • A kind of thin film transistor drive backplane and its manufacturing method, display panel

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Embodiment 1

[0048] see figure 1 As shown, this embodiment provides a method for manufacturing a thin film transistor driven backplane, including the following steps:

[0049] Step 1. Fabricate a backplane matrix with multiple active device structures; wherein, the backplane matrix includes a substrate substrate, a semiconductor layer, a gate insulating layer, a gate layer, an isolation protection layer, an interlayer dielectric layer, and a contact holes; the semiconductor layer has a plurality of active channels, and the gate layer has a plurality of gates; each active channel and the gate corresponding to its position constitute the active device structure.

[0050] Concretely making the backplane matrix specifically includes the following steps:

[0051] see figure 2 As shown, the base substrate 101 is cleaned, and a buffer layer 102 is provided on the base substrate by plasma-enhanced chemical vapor deposition; wherein, the base substrate is made of glass, transparent plastic, etc....

Embodiment 2

[0073] The TFT driving backplane in this embodiment is made by the manufacturing method described in Embodiment 1. Therefore, the technical content disclosed in Embodiment 1 will not be described repeatedly, and the content disclosed in Embodiment 1 also belongs to this embodiment. public content.

[0074] see Figure 7 As shown, this embodiment provides a thin film transistor driven backplane, which is made by the manufacturing method of the thin film transistor driven backplane as described above; the thin film transistor driven backplane includes a backplane with a plurality of active device structures A base body and an electrode layer arranged on the back plate base body; a plurality of source electrodes, drain electrodes and pixel electrodes integrally arranged with the drain electrodes are formed on the electrode layer.

[0075] The backplane base in this embodiment includes a base substrate, on which a semiconductor layer with multiple active channels, a gate insulati...

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Abstract

The invention relates to the field of display technology, in particular to a thin film transistor driving backplane, a manufacturing method thereof, and a display panel. The manufacturing method includes manufacturing a backplane substrate provided with multiple active device structures; setting an electrode layer on the backplane substrate; making the electrode layer into a source electrode, a drain electrode, and a drain electrode through a patterning process. An integrated pixel electrode. The manufacturing method of the present invention adopts a design in which the electrode layer is made into multiple source electrodes, drain electrodes, and pixel electrodes integrally arranged with the drain electrodes through a patterning process; the source electrodes, the drain electrodes, and the pixel electrodes are all in the same electrode layer; The source, drain and pixel electrodes that need to be formed by two patterning processes in the existing method are simplified to only one patterning process; the thickness of the thin film transistor driving backplane is greatly reduced, the manufacturing steps are simplified, and the savings production cost.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor driving backplane, a manufacturing method thereof, and a display panel. Background technique [0002] With the improvement of people's living standards, people's requirements for display quality are getting higher and higher. Liquid crystal displays (LCDs) have become very mature, and LCDs can be seen in mobile phones, cameras, computers, and televisions. People's large demand for display products objectively promotes the development of display technology, and new display technologies continue to emerge. Active matrix organic light-emitting diode panel (AMOLED) is called the next generation display technology, including Samsung Electronics, LG, Philips all attach great importance to this new display technology. At present, apart from Samsung Electronics, LG, and Philips, whose main direction is to develop large-sized active matrix organic light-emitting d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/124H01L27/1259H10N70/068H01L27/1288H01L28/88H01L29/66757
Inventor 王祖强刘建宏
Owner BOE TECH GRP CO LTD
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