Method for manufacturnig silicon high-speed semiconductor switch device

Abstract

The method is applicable to manufacture silicon semiconductor binistor with at least one PN junction such as GTO, IGBT etc. General manufacturing steps is carried out till the step of making metalized electrode. Platinum-silicon alloy is made on surface of silicon. Using proton or particle injection forms local high density defect area. Heating and annealing makes the defect area absorb platinum to convert to platinum impurity range. Then, General manufacturing steps is carried out till manufacturing completion. The performances of the invention are better than present life control technique. The parts made by the invention possesses higher switching speed and backward recovery speed, but the forward voltage drop and reverse leakage are not increased visibly.

Description

Technical field: [0001] The invention relates to a manufacturing method of a silicon high-speed semiconductor switching device, which is suitable for manufacturing a silicon semiconductor switching device containing at least one pn junction, such as a fast recovery diode, a thyristor, a gate turn-off thyristor (GTO), an insulated gate bipolar Fabrication of transistors (IGBTs) and bipolar switching transistors. Background technique: [0002] In power electronic devices, such as switching power supplies, inverters, etc., various semiconductor switching devices are used. An important requirement for switching devices is that the power loss of the device is small. This requires a fast switching speed of the device (in the current recovery time t during the turn-off process r small to mark) to reduce switching loss, reverse leakage I R small to reduce off-state losses, the forward voltage drop V on small to reduce on-state losses. In addition, the fast recovery diode also r...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the above technical problems, and provide a method for manufacturing a silicon high-speed semiconductor switching device containing at least one pn junction, which can solve the poor reverse blocking characteristics (leakage current) of devices existing in the existing local lifetime control technology. increase and decrease in breakdown voltage), better exert the theoretical advantages of the concept of local lifetime control, and manufacture silicon semiconductor switching devices with better performance than the existing technology, which is manifested in faster switching speed and soft The degree factor is larger but has basically the same reverse blocking performance (I R and V on ); or have a lower I R and V on while having essentially the same switching speed and softness

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