Solar battery slice technology for efficient and low-cost film crystal silicon

Abstract

The present invention is a technique for manufacturing a crystalline silicon solar cell piece, especially a technique for manufacturing a high-efficiency, low cost and thin-sheet solar cell piece, and the invention belongs to the solar energy application field. The technique aims at the thin-sheet crystal silicon chip with thickness less than 200 mu m, by adopting innovated technique and developing the original technique, combines the domestic cell whole equipment which is independently developed, settles the contradiction between the thin sheet and the fraction ratio, finished product rate and the electrical property, and satisfies the request of the cell piece product line to the high efficiency and low cost. The technique for manufacturing crystal silicon solar cell piece is subdivided to seven steps according to the process flow: eliminating the injury and coarsen the surface, diffusing to make a knot, plasma etching for eliminating the edge, PSG eliminating, PECVD depositing Si3N4 film, printing positive back electrode slurry and back field slurry on the silk screen, and co-baking to form an ohm contact. When the technique is adopted for the size 125*125mm<2>, the efficiency of the single crystalline silicon solar cell piece is up to 16.5, and the efficiency of the polycrystalline silicon solar cell is up to 15.0%.

Description

Technical field: [0001] The invention relates to a process for manufacturing crystalline silicon solar cells, in particular to a process for manufacturing thin solar cells with high efficiency and low cost, and belongs to the field of solar energy applications. Background technique: [0002] During the commercialization of crystalline silicon solar cells for more than 20 years, efforts to improve solar cell efficiency and reduce manufacturing costs have not stopped. In recent years, with the rapid expansion of the solar energy industry, the unbalanced supply and demand of raw materials has caused the price of solar-grade silicon materials to soar all the way. The thickness of silicon wafers has dropped from 320 μm, 270 μm, 230 μm, and 220 μm to below 200 μm. Thinning is a double-edged sword Sword, thin slices can reduce the cost, but the fragmentation rate will increase. With the traditional process, it is difficult to guarantee the electrical performance and appearance perf...

AI Technical Summary

Problems solved by technology

[0005] The present invention is aimed at thin crystalline silicon wafers with a thickness of less than 200 μm, overcomes the shortcomings of the existing technology, and develops and designs a set of self-developed equipment by combining the self-developed domestic battery line equipment by adopting innovative technology and reforming the original technology. The production process of each process that is compatible with the specifications and requirements of the company can better solve the contradiction between the flake and fragment rate, yield rate, and electrical performance, and meet the battery efficiency and cost requirements of the cell production line. The cells produced have High efficiency, low cost, excellent electrical performance, high-quality appearance, etc.