470 results about "Stress effects" patented technology

A method and apparatus for orchestrating multiple fractures at multiple well locations in a region by flowing well treatment fluid from a centralized well treatment fluid center is disclosed that includes the steps of configuring a well treatment fluid center for fracturing multiple wells, inducing a fracture at a first well location, measuring effects of stress fields from the first fracture, determining a time delay based in part upon the measured stress effects, inducing a second fracture after the time delay at a second location based upon the measured effects, and measuring the stress effects of stress fields from the second fracture. Sensors disposed about the region are adapted to output effects of the stress fields. Location and orientation of subsequent fractures is based on the combined stress effects of the stress fields as a result of the prior fractures which provides for optimal region development.

Strained channel transistors including a PMOS and NMOS device pair to improve an NMOS device performance without substantially degrading PMOS device performance and method for forming the same, the method including providing a semiconductor substrate; forming strained shallow trench isolation regions in the semiconductor substrate; forming PMOS and NMOS devices on the semiconductor substrate including doped source and drain regions; forming a tensile strained contact etching stop layer (CESL) over the PMOS and NMOS devices; and, forming a tensile strained dielectric insulating layer over the CESL layer.

The invention provides a display panel and a display device. The display panel comprises a flexible display substrate and a protective cover plate. The display substrate is covered with the protective cover plate, the protective cover plate comprises a flexible area, and the flexible area corresponds to a folding area located on the flexible display substrate, and is made from a material with the elasticity modulus smaller than 100 MPa and the tensile strength larger than 50 MPa. When the display panel is bent, a neutral layer (namely, a film layer with the stress of 0 in the bending process) can move towards a device layer (namely, a luminescent device layer) in the flexible display substrate, and is closer to the device layer in the flexible display substrate accordingly, the stress of the device layer in the flexible display substrate is reduced, the strain after the device layer in the flexible display substrate suffers from the stress effect is further reduced, the display panel is bent and then can further recover the smooth stage in the short time, and finally, damage to all the film layers in the display-panel bending process is reduced or avoided.

System and method for compact model algorithms to accurately account for effects of layout-induced changes in nitride liner stress in semiconductor devices. The layout-sensitive compact model algorithms account for the impact of large layout variation on circuits by implementing algorithms for obtaining the correct stress response approximations and layout extraction algorithms for obtaining the correct geometric parameters that drive the stress response. In particular, these algorithms include specific information from search “buckets” that are directionally-oriented and include directionally-specific distance measurements for analyzing in detail the specific shape neighborhood of the semiconductor device. The algorithms are additionally adapted to enable the modeling and stress impact determination of a device having single stress liner film and dual-stress liners (two different liner films that abut at an interface).

Micromachined disc resonator gyroscopes (DRGs) are disclosed designed to be virtually immune to external temperature and stress effects. The DRG is a vibratory gyroscope that measures angular rate which is designed to have reduced sensitivity to external thermal and mechanical stress. The DRG features an integrated isolator that may be fabricated on the same wafer as the electrode wafer forming a plurality of integrated isolator beams. In addition, the DRG may include a wafer level hermetical vacuum seal, flip chip ball grid array (BGA), and vertical electrical feedthrough to improve reliability and to reduce manufacturing cost. An additional carrier layer may be used with shock stops, vertical electrical feedthrough, and the flip chip BGA. A pyrex or quartz cap with embedded getter and shock stops can be employed.

The invention discloses an organic light-emitting display panel and an organic light-emitting display device. The organic light-emitting display panel comprises a substrate, an organic light-emitting structure and at least one barricade, wherein the barricades surround the organic light-emitting structure and point to the edge along the geometric center of the substrate, and the barricades are sequentially arranged. In the direction perpendicular to the stacking direction of the substrate and the organic light-emitting structure, the barricade closest to the edge of the substrate is the first barricade, and the first barricade is formed by connecting one or more nonlinear sub barricades, so that the stress area of the first barricade is increased, the effect of dispersing stress generated on the edge when the organic light-emitting display device is bent is achieved, and then the phenomenon that cracks generated by the stress effect stretches to a display region is avoided.

A bond pad is located over active circuitry formed within an integrated circuit device. A barrier film forms the bottom surface of the upper portion of a bond pad opening which also includes vias extending through the bottom surface to form a dual damascene structure. The bond pad is resistant to stress effects such as cracking, which can be produced when bonding an external wire to the bond pad, and therefore prevents leakage currents between the bond pads and the underlying circuitry.

A method and system for operating a pixel array having at least one pixel circuit is provided. The method includes repeating an operation cycle defining a frame period for a pixel circuit, including at each frame period, programming the pixel circuit, driving the pixel circuit, and relaxing a stress effect on the pixel circuit, prior to a next frame period. The system includes a pixel array including a plurality of pixel circuits and a plurality of lines for operation of the plurality of pixel circuits. Each of the pixel circuits includes a light emitting device, a storage capacitor, and a drive circuit connected to the light emitting device and the storage capacitor. The system includes a drive for operating the plurality of lines to repeat an operation cycle having a frame period so that each of the operation cycle comprises a programming cycle, a driving cycle and a relaxing cycle for relaxing a stress on a pixel circuit, prior to a next frame period.

The invention discloses a display panel, a bending method of the display panel and a display device. The display panel includes a display region, a wire arrangement region, and a bending region used for connecting the display region with the wire arrangement region. The bending region includes a first edge and second edges, the first edge refers to the edge on which the bending region is connectedwith the display region or the wire arrangement region, and the second edges refer to the edges, besides the first edge, of the bending region; at least one second edge includes inflection points, and the second edges are concaved toward the inside of the bending region at the positions of the inflection points. According to the display panel, at least one second edge of the bending region includes the inflection points, the second edges are concaved toward the inside of the bending region at the positions of the inflection points, thus the width, at the inflection points, of the bending region is thus very small, the inflection points easily become bending centers, and the situation that the bending centers are formed on the border of a protection layer is avoided; the stress effect applied by the protection layer on metal wires in the bending region in the bending process is reduced, and thus breaking of the metal wires in the bending region can be avoided.

A spring supporting inferior jig of direct tensile test is disclosed that comprises lower connector which is connected with the tester base, lower end cap of the set sample, lower chain which joins the lower end cap and the lower connector, bracing member which cases the destructed sample in the tensile test and the lower end cap, the lower end cap consists of sample fixing trough and linkage segment, the bracing member is the spiral compression springs; one end of the spiral compression spring is connected or contacted with the sample fixing trough of the lower end cap, the other end of the spiral compression spring is connected or contacted with the tester base, the linkage segment of the lower end cap, the lower chain and the lower connector are cased in the spiral compression spring, one end of the lower chain is connected with the lower end cap, the other end of the lower chain is connected with the lower connector. In the entire test, the sample, the lower end cap and the lower chain are supported by the spiral compression spring to avoid the condition that the sample is suddenly destroyed by the effect of the gravity when the pulling stress reaches the peak, so the stress effect test can be preceded after the peak stress.

The invention discloses an indoor grouting testing device under simulation of a complex stress effect and a testing method thereof. According to the invention, a rock-soil sample is wrapped with a rubber membrane, and is provided with an upper permeable stone and a lower permeable stone on the upper surface and the lower surface thereof respectively; the upper permeable stone and the lower permeable stone are arranged in a closed surrounding pressure room; the upper permeable stone is provided with a pressurization plug; the pressurization plug is connected to an axial pressurization device through a force transfer rod; a surrounding pressure pipe is communicated with the surrounding pressure room, and the outer end of the surrounding pressure pipe is connected with a surrounding pressure system; a counter pressure pipe is connected with the upper permeable stone, and the outer end of the counter pressure pipe is connected with a counter pressure system; and a grouting filter pipe, placed in the axes of the rock-soil sample, is connected with equipment, such as a grouting pump, a slurry barrel and the like through grouting pipes. Through truly simulating the coupling effect between deep complex stress and underground water pressure, the slurry dispersion radius in rock-soil body grouting and the function relationship between the osmotic coefficient value of a grouted stone body and the related parameter are obtained. The device and the method shorten the time needed by tests, and achieve effects of convenience, reliability and accuracy.

A redistribution connecting structure for solder balls is disclosed. A substrate includes a plurality of bonding pads. A plurality of dielectric layers, a redistribution conductive layer between the dielectric layer, and a plurality of solder balls are formed on the substrate. The redistribution layer has a redistribution pad disposed adjacent to one of the bonding pads without electrical connection with the redistribution pad. One of the dielectric layers covering the redistribution conductive layer has an opening to partially expose the redistribution pad, in which the opening is approximately circular and has a cut-off portion so that the opening is adjacent to an opening of another of the dielectric layers exposing one of the bonding pads without overlapping. Accordingly, bonding area of the redistribution pad for a bonding pad under one of the solder balls can be expanded to reduce stress effect.

Roughly described, methods and systems for improving integrated circuit layouts and fabrication processes in order to better account for stress effects. Dummy features can be added to a layout either in order to improve uniformity, or to relax known undesirable stress, or to introduce known desirable stress. The dummy features can include dummy diffusion regions added to relax stress, and dummy trenches added either to relax or enhance stress. A trench can relax stress by filling it with a stress-neutral material or a tensile strained material. A trench can increase stress by filling it with a compressive strained material. Preferably dummy diffusion regions and stress relaxation trenches are disposed longitudinally to at least the channel regions of N-channel transistors, and transversely to at least the channel regions of both N-channel and P-channel transistors. Preferably stress enhancement trenches are disposed longitudinally to at least the channel regions of P-channel transistors.

A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.

The invention discloses a weak surrounding rock, tunnel intersection and arc-shaped pilot tunnel construction method. The method is characterized by consisting of the following steps: (1) excavating and supporting a mouth of a transverse hole; (2) constructing an advancing large pipe roof; (3) excavating and supporting a body of the transverse hole; (4) performing transverse hole inverted arch construction and bottom plate construction; (5) performing intersection door opening construction; (6) performing direct top brushing type excavation and supporting on an arc-shaped pilot tunnel; (7) mounting and supporting an upper guide arch frame of a front hole; (8) disassembling the temporary support of the arc-shaped pilot tunnel; (9) excavating and supporting the front hole by a step method; (10) constructing lining reinforced concrete on the body of the transverse hole; (11) excavating and supporting the front hole and adding a temporary inverted arch; (12) constructing a front hole inverted arch and adding a temporary cross brace; (13) constructing an inverted arch on the intersection front hole; (14) constructing lining reinforced concrete on the intersection; and (15) shifting to normal construction of the front hole. The arc-shaped pilot tunnel construction section is smaller than the front hole excavating section; the potential safety hazards of the arch change of the weak surrounding rock are avoided; the temporary work amount is small; the construction efficiency is high; the transverse hole at the intersection does not climb; and the stressed effect of the special-shaped arch frame of the front hole is good.

In comb drive vibratory gyroscopes, drive-induced Coriolis accelerometer offset is effectively canceled by demodulating the output during equal times of in-phase and anti-phase drive of the shuttle with respect to the velocity signal used for angular rate demodulation. This reduces or eliminates the corresponding thermal and die-stress effects otherwise needing calibration.

The invention provides an application method of cold field plasma discharge assisted high energy ball milled powder and a plasma assisted high energy ball milling device using the cold field plasma discharge assisted high energy ball milling method. The method comprises the following steps: utilizing dielectric barrier discharge to generate plasmas, introducing a dielectric barrier discharge electrode bar into a high-speed vibrating ball-milling tank, on one hand, requiring a solid insulating medium on the outer layer of the electrode bar to simultaneously bear high-voltage discharge and mechanical shock failure of the grinding ball, and on the other hand, requiring the high-speed vibrating ball milling device to uniformly process the powder. The method is based on the ordinary ball milling technology; the processing efficiency and the effect of the ball mill can be greatly improved by the following steps: under a non-heat-balance discharge condition of the pressure that the discharge space pressure is set to be about 102-106 Pa, introducing the discharge plasmas to input another effective energy to the processed powder, promoting the powder to be processed to be subjected to combined action of the mechanical stress effect and the heat effect of the external electric field, and further accelerating refining of the powder and promoting the alloying progress.

The invention discloses a GaAs-based LED chip cutting method. The method comprises the following steps: (1) semi-cutting is carried out on a P surface, criss-cross cutting grooves are formed, and chip P surface electrodes are separated at equal intervals; (2) the chip P electrodes face a white film downwardly, N electrodes face upwardly and are attached to the white film; (3) chip N surface scribing is carried out along the cutting grooves formed by P surface semi-cutting, and chip N surface stress is relieved; (4) film inverting is carried out on the scribed chip, and the chip is transferred to a blue film from the white film; and (5) on the chip N surface, a bonding tool of a chip breaking machine is used for chip breaking along scratches, and the chip is processed into independent crystal grains. The improved surface mount method is used, a cutting method which combines advantages of a chip sawing machine and a laser chip scribing machine is adopted, the chip P surface stress and the N surface stress are relieved maximally, deformation stress effects caused by film laminating can be reduced and edge collapse and pipe core breaking phenomena after the chip is cut are reduced, and the appearance quality after the chip is cut is improved.

A composition for suppressing appetite and cravings for substances such as nicotine, coffee, sweets or chocolate while improving energy and enhancing mood comprises theobromine or a salt thereof at an effective amount of from about 250 to 4000 mg. Using such relatively high proportions of theobromine, without added caffeine or ephedrine provides an effective method for promoting weight control or to halt substance cravings without the side effects associated with such stimulants. The composition also includes Rhodiola rosea extract to offset stress effects from reduced food or substance intake, and to further improve mood, and clarity of thought and ability to handle stress, and to also increase endurance while reducing muscle pain.

The invention discloses a predicting method of large-size NEPE propellant loading storage life, which includes following steps: (1) performing constant-stress load single-temperature acceleration test, which includes operations of making an NEPE propellant acceleration aging test sample under constant-stress load and performing a single-temperature-stress level temperature acceleration life test; (2) researching the performance change law during an NEPE propellant loading aging process; (3) determining a failure model of the NEPE propellant loading; and (4) carrying out acceleration life tests at different temperatures and under different pressures to predict the large-size NEPE propellant loading storage life. In the method, by means of loading pressure to simulate the self weight on a large-size NEPE propellant during storage, the performance change law of the NEPE propellant under a temperature-pressure double-stress effect. In addition, with tensile strength as a failure parameter, the method of evaluating the NEPE propellant loading storage life is disclosed.

The invention relates to a degradable human body stent capable of effectively preventing transposition and reducing hyperplasia. The degradable human body stent is characterized by comprising a reticulate body structure, a skirt stacking type degradable laminating membrane, at least one developing sign and a covering membrane. The skirt stacking type degradable laminating membrane and the developing sign are additionally arranged on multiple sections of reticulate bodies to be used for identifying the human body implantation position of the human body stent during human body developing. The reticulate body structure is composed of the multiple sections of reticulate bodies, and the multiple sections of reticulate bodies are connected in series, so that the multiple sections of reticulate bodies are bent to a certain degree relative to others under the stress effect, and a channel is formed between the multiple sections of reticulate bodies. The multiple sections of reticulate bodies are formed by degradable materials. The peripheries of the multiple sections of reticulate bodies are covered by the covering membrane, the membranes of the whole stent are like fish scales, and one section of skirt is stacked below a next section of skirt. The one or more developing signs are additionally arranged on the multiple sections of reticulate bodies to be used for identifying the human body implantation position of the human body stent during human body developing.

The present invention provides a method for manufacturing a semiconductor device, comprising: determining an isolation structure stress effect of a first semiconductor device, determining an optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is offset against the optical proximity effect on a fabrication model, and using the selected design parameter to construct a third semiconductor device.