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Three-dimensional micro- force silicon micro- sensor

A silicon microsensor and three-dimensional microforce technology, which is applied in the field of three-dimensional semiconductor piezoresistive microforce silicon microsensors, can solve problems such as the lack of ability to measure micro-forces acting on the micro-new level

Inactive Publication Date: 2008-11-19
XI AN JIAOTONG UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

Although the development of force sensors is rapid, most of the multi-dimensional force sensors are generally in the Newton range due to the limitations of application occasions and processing structures, and lack the ability to measure micro-forces at the micro-Newton level; and most MEMS probe micro-force sensors are subject to The limitation of the micro-cantilever beam structure, although it can achieve the ability to measure the force of the micro-Newton level, it often only has the ability to measure the single-dimensional and two-dimensional micro-force

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Embodiment Construction

[0016] The structural principle and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] see figure 1 , the invention mainly includes two parts: a micro-mechanical probe and a three-dimensional force conversion platform with a four-cantilever beam structure. Its specific structure is: a three-dimensional micro-force silicon microsensor, including a glass substrate 1, a silicon side wall 6 is arranged on the glass substrate 1, and four single-end fixed-supported silicon cantilever beams 4 perpendicular to each other are arranged in the middle of the silicon side wall 6. The cantilever beam 4 supports the mass suspension block 5 in the middle, and the micromechanical probe 3 is arranged on the mass suspension block 5, and a set of piezoresistive strips 2 is arranged on each of the four cantilever beams 4, and four sets of piezoresistive strips 2 are arranged as Wheatstone bridge. The thickness of t...

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Abstract

Disclosed is a three-dimensional micro-force silicon micro-sensor, which comprises a glass substrate 1, four single end-clamped silicon cantilever beams 4 vertical to one another are arranged on the glass substrate 1, the cantilever beams 4 support a middle mass hanging block 5, a nano-indenter 3 is arranged on the mass hanging block 5, a piezoresistive strip 2 is disposed on the four cantilever beams 4 respectively, and the four piezoresistive strips 2 are designed into a Wheatstone bridge. The sensor integrates stress sensitivity and force-power conversion detection into one body, and has advantages of high sensitivity, good dynamic response, high precision and easy miniaturization and integration.

Description

technical field [0001] The invention relates to a silicon microsensor, in particular to a probe-based three-dimensional semiconductor piezoresistive microforce silicon microsensor. Background technique [0002] In the process of micro-operation and micro-force measurement, such as clamping, moving cells and nano-electrodes, etc., some characteristics of the operated object or sensor itself, such as displacement and operating force, are usually in the order of micro / nano, microN or even nanoN. Physical quantities, if you cannot understand and master these physical quantities during the micro-operation process, it is likely to cause damage to the object being operated or the sensor itself. In addition, the online measurement during the operation process plays an important role in the monitoring of the quantitative indicators of the micro-operation . With the rapid development of MEMS technology and micromechanical technology, devices are developing towards miniaturization and...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18B81B7/02B81B3/00
Inventor 赵玉龙林启敬蒋庄德王鑫垚杨川赵立波
Owner XI AN JIAOTONG UNIV
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