Acceleration switch sensor with adjustable threshold value of silicon base band locking function and manufacturing method thereof
A technology of acceleration switch and sensor, which is applied in the direction of measuring acceleration, speed/acceleration/shock measurement, instruments, etc., and can solve problems such as strict process tolerance requirements, single measurement threshold, and difficulty in realizing intelligent integration
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[0039] The technological process of the silicon-based shock acceleration threshold switch as described in the summary of the invention is as follows:
[0040] a. At a resistivity of 0.001Ωcm 2 A 5um silicon well is etched on the front side of the SOI silicon wafer as an active gap for the movable structure, such as Figure 4 as shown in .a;
[0041] b. Form a cantilever beam structure in the silicon well of step a, and stop at the SOI buried layer, such as Figure 4 .b shown;
[0042] c. Deposit a dielectric insulating layer on the front of the cantilever beam as a dielectric insulating layer when the switch is closed, then deposit a metal layer on the insulating layer at the end of the beam to form a contact electrode, and deposit a metal layer on the glass to form a drive plate, Fixed contact electrodes as well as chip traces, such as Figure 4 .b shown;
[0043] d. Align and bond the silicon wafer and the glass wafer in step c, such as Figure 4 as shown in .c;
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