30results about How to "Good process tolerance" patented technology

The invention relates to a compounded stabilizer, normal temperature yoghurt containing the compounded stabilizer, and a preparation method of the yogurt. The compounded stabilizer comprises, by mass, 50-90% of esterified modified starch, 3-15% of pectin, 2-15% of agar, 4-15% of an emulsifier and 1-5% of gellan gum. The invention also provides normal temperature yoghurt containing the compounded stabilizer, and a preparation method of the yogurt. The compounded stabilizer has good process tolerance, improves the viscosity stability of a technology processed normal temperature yoghurt system and the viscosity recovery stability of a subsequent product, and allows the viscosity of yogurt at normal temperature of 20-40DEG C to be similar or greater than the viscosity of yogurt refrigerated at normal temperature of 3500-5000cp. The normal temperature yogurt prepared in the invention can be stored at normal temperature of 20-40DEG C for 4-6 months, and allows high quality yogurt to be drunk in remote cold chain lacking places.

The invention discloses an on-chip polarization independent system of an integrated optical waveguide chip. The on-chip polarization independent system of the integrated optical waveguide chip comprises a polarization converting module, a shunt / combiner, a light function module and a phase modulation module. A TM0 module is converted into a TE1 module through the polarization converting module, the TE1 module is divided into two paths of TE0 modules through the shunt, and therefore the integrated optical waveguide chip is independent of the polarization of the optical signal processing. The on-chip polarization independent system is independent of a mode separation structure based on a directional coupler, big device characteristic changes, caused by the fabrication error, of a coupling structure are avoided, and the on-chip polarization independent system has good technological allowance. The whole system is simple in structure, has high stability and reliability, is beneficial to integration and practicality and can be widely applied to a light mode multiplex communication system.

A method for forming a waveguide having a thin-core region, a thick-core region, and a transition region of tapered thickness between them is disclosed. The method comprises forming a lower core layer of a first material on a lower cladding, forming a thin central core layer of a second material on the first core layer, forming an upper core layer of the first material on the central core layer, and etching the upper core layer in an etchant such that it is removed from the thin-core region and its thickness monotonically changes from its as-deposited thickness to extinction across the transition region, where the central core layer protects the lower core layer from exposure to the etchant.

The invention relates to silicon-based adjustable threshold acceleration switch sensor with lock-up function and a manufacturing method thereof. The switch sensor is characterized by consisting of an anchorage zone and a silicon frame which are arranged at an insulation substrate, a low resistance silicon cantilever with a singe end fixed in the anchorage zone, a metal electrostatic drive conductive fixed polar plate at the insulation substrate, an insulation medium layer on the lower surface of the cantilever, a metal contact electrode on the medium layer, a fixed metal contact electrode and a signal drive / detection loop. The drive voltage and threshold acceleration of the sensor provided have certain relationship and the sensor provided has the lock-up function. The signal output mode of the working state of the sensor is detected by the on-and-off of a metal bridge circuit, which ensures that the acceleration switch sensor produced by utilizing MEMS has the advantages of simple structure, small volume, low energy consumption, low on-resistance, convenient interface circuit and good input and output insulation performance, etc.

The invention discloses an SOI voltage resistance structure with charge regions fixed at equal intervals and a power device. The SOI voltage resistance structure comprises a substrate layer, a dielectric buried layer, an active layer and a plurality of high-concentration fixed charge regions with the concentration larger than or equal to 1*10<13> cm<-2>, wherein the substrate layer, the dielectric buried layer, the active layer and the high-concentration fixed charge regions are stacked in sequence from top to bottom. The high-concentration fixed charge regions are made of a dielectric material, and the charge polarity is positive. The high-concentration fixed charge regions are all located on the dielectric buried layer, arranged in a spaced mode and distributed at equal intervals. According to the SOI voltage resistance structure with the charge regions fixed at equal intervals and the power device, the electric field of the dielectric buried layer can be greatly enhanced, and the voltage resistance capacity is effectively improved; a technology is easy to implement, and is completely compatible with a common CMOS technology.

The invention relates to a vitamin D inclusion powder, a preparation method thereof and an application of the inclusion powder to a healthcare food tablet, and belongs to the technical field of medical health care. The particle diameter range of the vitamin D inclusion powder is smaller than or equal to 380 micrometers, and the vitamin D inclusion powder comprises vitamin D, antioxidants and pharmaceutically acceptable solvents, fillers and flow aids. According to the method, active components are pretreated, the solvents are dispersed and added into auxiliary materials to perform granulation,mixing uniformity of the active components is ensured, and the stability of the vitamin D is ensured. In addition, the vitamin D inclusion powder can be used for preparing the healthcare food tablet,the prepared oral tablet is good in content uniformity, the vitamin D is good in stability, production and running cost is reduced, and production benefits are improved. Moreover, types of the used auxiliary materials are conventional auxiliary materials, so that unpredictable side effects caused by various auxiliary materials can be avoided.

The present invention provides the recipe and production process of low temperature sintered ceramic material for multilayer ceramic capacitor. The ceramic material is produced with main component in 84-96 wt%, glass material in 3-14 wt%, Bi2O3.nTiO2 in 0-13 wt% and SrTiO3 in 0-10 wt%, and through mixing, water milling and drying. Of the materials, the main component is prepared with BaCO3, TiO2, etc and through mechanical mixing, drying, calcining and holding; the glass material is prepared with H3BO3, SiO2, etc and through mechanical mixing, drying, calcining and holding; and Bi2O3 .nTiO2 is prepared with Bi2O3 and TiO2 and through mixing, drying, calcining and holding. The ceramic material has dielectric constant of 70-100, dielectric loss of 0.01-0.05%, insulation resistance not lower than 1012 ohm, and TCC within 30ppm (-55deg.C to +125deg.C). It possesses the features of low sintering temperature, environment friendship, etc.

The invention discloses a power device with a fixed interface charge field limitation ring. The power device comprises a field oxide layer and an active layer, wherein the field oxide layer is arranged on the active layer, at least one fixed interface charge region is arranged in the field oxide layer, and the fixed interface charge region is arranged at a lower part of the field oxide layer and is in contact with a lower surface of the field oxide layer, namely an interface surface of the field oxide layer and the active layer. By the power device, the problems of breakdown voltage drop and device failure caused by impurity diffusion in an FLR region of an existing power device can be solved, the breakdown voltage of the device is effectively improved, the electric field distribution of a surface of the active layer is improved, and the electric field distribution is more uniform.

The invention discloses a linear space distribution fixed charge island SOI withstand voltage structure and a power device. The SOI withstand voltage structure comprises a substrate layer, a dielectric buried layer, an active layer and a plurality of high-concentration fixed charge areas with the concentration larger than or equal to 1*10<13>cm<-2>, wherein the substrate layer, the dielectric buried layer, the active layer and the high-concentration fixed charge areas are sequentially stacked from bottom to top; the high-concentration fixed charge areas are formed by dielectric materials, and the polarity of charges is positive; the high-concentration fixed charge areas are all located on the upper portion of the dielectric buried layer and arranged interruptedly; in the transverse withstand voltage direction, the space between every two high-concentration fixed charge areas linearly decreases or increases progressively. The electric field of the dielectric buried layer can be greatly improved through the structure, and therefore the withstand voltage can be effectively increased; the technology is easy to obtain and is totally compatible with a conventional CMOS technology.

The present invention provides the recipe and production process of low temperature sintered ceramic material for multilayer ceramic capacitor. The ceramic material is produced with main component in 84-96 wt%, glass material in 3-14 wt%, Bi2O3.nTiO2 in 0-13 wt% and SrTiO3 in 0-10 wt%, and through mixing, water milling and drying. Of the materials, the main component is prepared with BaCO3, TiO2, etc and through mechanical mixing, drying, calcining and holding; the glass material is prepared with H3BO3, SiO2, etc and through mechanical mixing, drying, calcining and holding; and Bi2O3 .nTiO2 is prepared with Bi2O3 and TiO2 and through mixing, drying, calcining and holding. The ceramic material has dielectric constant of 70-100, dielectric loss of 0.01-0.05%, insulation resistance not lower than 1012 ohm, and TCC within 30ppm (-55deg.C to +125deg.C). It possesses the features of low sintering temperature, environment friendship, etc.

The invention provides a power device with a surface charge region structure, and the power device comprises a P substrate I (1), a floating equipotential layer (4), a P substrate II (2) and a drift region (5), wherein the P substrate I (1), the floating equipotential layer (4), the P substrate II (2) and the drift region (5) are arranged in order from the bottom to the top. The drift region (5) is provided with an N+ drain region, a drain electrode (10), a gate electrode (12), a source electrode (11), an N+ contact region, a P well (7), and a P+ source region. A series of laterally and equidistantly distributed N+ charge regions (6) are disposed at the top of the drift region (5) and within the drift region to form the surface charge region. Because the surface of the drift region is provided with a surface charge region structure of a series of equidistantly distributed N+ charge regions, the surface charge region generates interface charges, and the electric field in the charge region is improved, and the lateral withstand voltage of the device is improved. The interface charge improves the longitudinal electric field and longitudinal withstand voltage of a buried layer at the same time, reduces the electric field nearby the drain electrode and prevents the surface of the device from being broken down too early. Because the power device employs the surface charge region structure of equidistantly distributed N+ charge regions, the power device is simple and feasible in technology, is better in technological tolerance, and is compatible with the conventional CMOS technology.

The invention discloses an on-chip polarization independent system of an integrated optical waveguide chip. The on-chip polarization independent system of the integrated optical waveguide chip comprises a polarization converting module, a shunt / combiner, a light function module and a phase modulation module. A TM0 module is converted into a TE1 module through the polarization converting module, the TE1 module is divided into two paths of TE0 modules through the shunt, and therefore the integrated optical waveguide chip is independent of the polarization of the optical signal processing. The on-chip polarization independent system is independent of a mode separation structure based on a directional coupler, big device characteristic changes, caused by the fabrication error, of a coupling structure are avoided, and the on-chip polarization independent system has good technological allowance. The whole system is simple in structure, has high stability and reliability, is beneficial to integration and practicality and can be widely applied to a light mode multiplex communication system.

The invention provides a solving scheme for customized matching of silver-coated copper electrode slurry and an LTCC membrane band, namely a similar all-side parameters-based customized matching scheme for membrane band casting slurry and silver-coated copper electrode slurry in an LTCC technology. A solving scheme for fundamentally and comprehensively solving the problem of poor tolerance of the LTCC technology is provided mainly for the problem of matching of porcelain and the electrode slurry. The adopted electrode slurry is prepared from silver-coated copper powder, so that the economic applicability of the solving scheme is also improved. The solving scheme provided by the invention has the characteristics of ordinary and easy-to-purchase materials, good process tolerance and the like, meets the green and energy-saving environmental protection requirements, has a good industrial application prospect, provides a solid foundation for high-speed development of LTCC industrialization of our country, and is expected to be applied on a large scale in multiple fields of wireless communication, aerospace and military, microwave-radio frequency device application, automotive electronic devices and the like.

The invention belongs to the technical field of the optical device, and relates to a polarization beam splitter based on a metal raster. The main structure of the polarization beam splitter based on the metal raster comprises a covering film layer, a raster structure, a raster groove and a substrate. The upper surface of the raster structure is fixedly covered by the covering film layer, and the covering film layer is capable of realizing the function of a waveguide layer in the diffraction process of the raster structure and protecting the raster structure. The silver raster structure is used for preparing the parallelly distributed raster grooves through the etching technology. The raster groove is 300 nm in depth, the duty ratio of the raster is 0.21, and the raster period of the raster structure is 180 nm. The substrate of the SiO2 material is fixedly positioned on the lower surface of the raster structure. The polarization beam splitter based on the metal raster is on the basis of the silver raster structure, and has advantages of high diffraction efficiency, high extinction ratio, good polarization performance, good technology tolerance, simple main structure, convenient use, good market application prospect and friendly application environment. The spectral bandwidth is wide, and up to 207 nm. The performance can satisfy the requirements to the polarization beam splitter in the field of the optical device.

The invention provides a power device with a surface charge region structure, comprising a P substrate I (1), a floating equipotential layer (4), a P substrate II (2) and a drift region (5) arranged in sequence from bottom to top ); the drift region (5) is provided with an N+ drain region, a drain electrode (10), a gate electrode (12), a source electrode (11), an N+ contact region, a P well (7) and a P+ source region; the A series of N+ charge regions (6) distributed laterally and equidistantly on the top of the drift region (5) and located in the drift region form a surface charge region. The present invention sets a series of equidistant N on the surface of the drift region + The surface charge region structure of the charge region, the surface charge region generates interface charges, which enhances the electric field in the charge region and improves the lateral withstand voltage of the device; the interface charge simultaneously enhances the vertical electric field and vertical withstand voltage of the buried layer, reduces the electric field near the drain, and prevents the device from The surface breaks down prematurely; due to the use of the surface charge region structure with equal spacing N+, the process is simple and feasible, the process tolerance is good, and it is compatible with the conventional CMOS process.

The invention provides a method for preparing a rivaroxaban intermediate, comprising the following steps: (1) react compound A and compound B in alcohol or an aqueous alcohol solution to obtain compound C; (2) compound C and N,N ′-carbonyldiimidazole reaction, the reaction solvent is selected from acetonitrile or butyronitrile, to obtain a reaction solution containing compound D, cooling and crystallization, to obtain compound D

The invention relates to a non-yellowing polyurethane two-component adhesive, which is particularly suitable for bonding stones of permeable pavements of sponge cities and slow walks of cities and bonding various recyclable solid waste aggregates, and belongs to the technical field of adhesives for pavements. Comprising a component A and a component B in a weight ratio of 100: (50-80), the component A comprises the following raw materials in parts by weight: 90-100 parts of amino-terminated polyether, 0-3 parts of a stabilizer, 0-3 parts of a water removal agent and 0-2 parts of a defoaming agent; the component B is prepared from the following raw materials in parts by weight: 70 to 100 parts of aliphatic isocyanate and 0 to 30 parts of modified aliphatic isocyanate. Under the condition that the rigidity is met, yellowing cannot be generated.

The invention discloses a power device with a fixed interface charge field limitation ring. The power device comprises a field oxide layer and an active layer, wherein the field oxide layer is arranged on the active layer, at least one fixed interface charge region is arranged in the field oxide layer, and the fixed interface charge region is arranged at a lower part of the field oxide layer and is in contact with a lower surface of the field oxide layer, namely an interface surface of the field oxide layer and the active layer. By the power device, the problems of breakdown voltage drop and device failure caused by impurity diffusion in an FLR region of an existing power device can be solved, the breakdown voltage of the device is effectively improved, the electric field distribution of a surface of the active layer is improved, and the electric field distribution is more uniform.

The invention provides a metronidazole tablet composition with stable quality. A preparation method comprises the following steps: (1) preparation of raw materials and auxiliary materials; (2) mixingto prepare a soft material; (3) granulating; (4) drying; (5) size stabilization; (6) total mixing; and (7) tableting. The metronidazole tablet composition disclosed by the invention is definite in curative effect and stable in quality, and is consistent with reference listed drugs in quality and curative effects, and generic drugs can well replace the reference listed drugs; and the production process is simple, and the process tolerance is good.

The invention relates to a roxithromycin capsule and a preparation method thereof and belongs to the technical field of pharmaceutical preparations. The roxithromycin capsule is prepared from roxithromycin, low-substituted hydroxypropyl cellulose, silicon dioxide, talcum powder and magnesium stearate, wherein the water contents of the roxithromycin and the low-substituted hydroxypropyl cellulose are both lower than 1.5%, preferably the water content of the roxithromycin and the low-substituted hydroxypropyl cellulose are both lower than 1.0%; the ratio of roxithromycin to silicon dioxide is 30:1; the silicon dioxide is heavy silicon dioxide; the ratio of the roxithromycin raw material to talcum powder is 10:(1-1.4); the used amount of the magnesium stearate is 0.2-0.4% by weight of the capsule. The capsule has small content difference and is simple in preparation process and high in production efficiency, the dissolution rate of the capsule is higher than 80% within 45 minutes of the valid period, the quality of the prepared capsule is stable, the curative effect is determined, and the dissolution rate meets the requirements in the long-term storage process.

The invention relates to silicon-based adjustable threshold acceleration switch sensor with lock-up function and a manufacturing method thereof. The switch sensor is characterized by consisting of an anchorage zone and a silicon frame which are arranged at an insulation substrate, a low resistance silicon cantilever with a singe end fixed in the anchorage zone, a metal electrostatic drive conductive fixed polar plate at the insulation substrate, an insulation medium layer on the lower surface of the cantilever, a metal contact electrode on the medium layer, a fixed metal contact electrode anda signal drive / detection loop. The drive voltage and threshold acceleration of the sensor provided have certain relationship and the sensor provided has the lock-up function. The signal output mode of the working state of the sensor is detected by the on-and-off of a metal bridge circuit, which ensures that the acceleration switch sensor produced by utilizing MEMS has the advantages of simple structure, small volume, low energy consumption, low on-resistance, convenient interface circuit and good input and output insulation performance, etc.

The invention relates to a roxithromycin capsule and a preparation method thereof and belongs to the technical field of pharmaceutical preparations. The roxithromycin capsule is prepared from roxithromycin, low-substituted hydroxypropyl cellulose, silicon dioxide, talcum powder and magnesium stearate, wherein the water contents of the roxithromycin and the low-substituted hydroxypropyl cellulose are both lower than 1.5%, preferably the water content of the roxithromycin and the low-substituted hydroxypropyl cellulose are both lower than 1.0%; the ratio of roxithromycin to silicon dioxide is 30:1; the silicon dioxide is heavy silicon dioxide; the ratio of the roxithromycin raw material to talcum powder is 10:(1-1.4); the used amount of the magnesium stearate is 0.2-0.4% by weight of the capsule. The capsule has small content difference and is simple in preparation process and high in production efficiency, the dissolution rate of the capsule is higher than 80% within 45 minutes of the valid period, the quality of the prepared capsule is stable, the curative effect is determined, and the dissolution rate meets the requirements in the long-term storage process.

The invention relates to a photosensitive composition and application thereof. The photosensitive composition comprises a free radical scavenger, a monomer, a photoinitiator, alkali-soluble resin anda pigment, wherein the mass of the free radical scavenger accounts for 0.01-0.8 wt.% of the total mass of the monomer and the alkali-soluble resin; the photosensitive composition is used for a color filter. According to the invention, the free radical scavenger accounting for 0.01-0.8 wt.% of the total mass of the monomer and the alkali-soluble resin is added into the photosensitive composition; according to the photosensitive composition disclosed by the invention, a plurality of free radicals generated between pre-baking and exposure are reacted, so the dark reaction is weakened, the line width of a product is still stable even if the product is placed for a long time, the yield of the product is improved, and the photosensitive composition has good process tolerance.

The invention relates to the field of low-temperature co-fired ceramics, in particular to a high-bending-strength low-temperature co-fired ceramic material for a microwave substrate and a preparation method of the high-bending-strength low-temperature co-fired ceramic material. The high-bending-strength low-temperature co-fired ceramic material comprises KBSL glass, LCBSAZ glass and alpha-Al2O3; the mass ratio of the KBSL glass to the LCBSAZ glass to the alpha-Al2O3 is (32 to 38): (12 to 18): 50. The product can be applied to the high-bending-strength microwave substrate, has the characteristics that the raw materials are common and easy to buy, the preparation method has good process tolerance and the like, meets the environmental protection requirements of green energy conservation, carbon neutralization and the like, and has good industrial application prospects; the method is expected to be applied to many fields of communication, aerospace, military, microwave-radio frequency device application, automobile electronic devices and the like on a large scale.

The invention relates to a compound stabilizer, normal temperature yoghurt containing it and a preparation method thereof. In terms of mass percentage, the compound stabilizer includes: 50%-90% esterified modified starch, 3%-15% pectin, 2%-15% agar, 4%-15% emulsifier, 1 %‑5% gellan gum. The invention also provides a normal temperature yoghurt containing the compound stabilizer and a preparation method thereof. The compound stabilizer provided by the present invention has better process tolerance, improves the viscosity stability of the room temperature yogurt system after process treatment and the viscosity recovery stability of subsequent products, and makes it store at room temperature at 20°C-40°C It has a viscosity range similar to or greater than 3500cp-5000cp of refrigerated room temperature yogurt. The normal-temperature yogurt prepared by the invention can be stored at a normal temperature of 20°C-40°C for 4-6 months, so that remote places with unsound cold chains can also drink high-quality yoghurt.

The invention discloses a process deviation analysis method for a silicon-based Mach-Zehnder type electro-optic modulator. The method comprises the following steps of (1) characterizing and quantifying reflection deviation characteristics of a driving signal on a traveling wave electrode by means of the input reflection coefficient S11; (2) performing measurement and quantization on modulation signal characteristics of the silicon-based Mach-Zehnder type electro-optic modulator, wherein the modulation signal characteristics comprise transmission characteristics, vertical characteristics and horizontal characteristics; and (3) introducing a Pearson correlation coefficient and a partial correlation coefficient, and analyzing the relationship between the reflection deviation characteristics of the driving signal and the deviation of the modulation signal characteristics by analyzing the values and trends of the Pearson correlation coefficient and partial correlation coefficient. The method provided by the invention can establish a link between process control and performance analysis at the device level and helps to develop device designs with better process tolerances.

The invention discloses an SOI voltage resistance structure with charge regions fixed at equal intervals and a power device. The SOI voltage resistance structure comprises a substrate layer, a dielectric buried layer, an active layer and a plurality of high-concentration fixed charge regions with the concentration larger than or equal to 1*10<13> cm<-2>, wherein the substrate layer, the dielectric buried layer, the active layer and the high-concentration fixed charge regions are stacked in sequence from top to bottom. The high-concentration fixed charge regions are made of a dielectric material, and the charge polarity is positive. The high-concentration fixed charge regions are all located on the dielectric buried layer, arranged in a spaced mode and distributed at equal intervals. According to the SOI voltage resistance structure with the charge regions fixed at equal intervals and the power device, the electric field of the dielectric buried layer can be greatly enhanced, and the voltage resistance capacity is effectively improved; a technology is easy to implement, and is completely compatible with a common CMOS technology.