21 results about "Microwave substrate" patented technology

The invention discloses a modular sip transceiver assembly based on HTCC, and belongs to the technical field of satellite communication. The modular transceiver assembly mainly comprises two radio frequency front end sip modules, two secondary frequency conversion sip modules, two local oscillator carrier plate sip modules, a power supply and an FPGA control module. The whole assembly mainly comprises five radio frequency systems and four receiving channels which are completely the same and are almost consistent with the other transmitting channel in structure, modular design is adopted, a mature microwave substrate processing technology is combined with an existing micro-assembly process, and through an HTCC ceramic tube shell and a sip technology, surface mounting application of a microwave 3D module is achieved, and meanwhile light-weight and small-size design is achieved. According to the three-dimensional stacked packaging, various passive devices can be subjected to interlayer integration, the assembly integration level is greatly improved, an expected complete machine system can be verified more quickly and flexibly, especially for a multi-path system, only a single module needs to be used for testing in the earlier stage, and the three-dimensional stacked packaging module is suitable for various communication occasions.

The invention discloses a microwave substrate defect identification and automatic sorting method, which comprises the following steps of: setting a first machine position to carry out front and back judgment on a microwave substrate, and entering a second machine position when judging that the microwave substrate is the front side; setting a second machine position for front detection and positioning, identifying front defects, and determining to enter a third machine position or move into a waste tank according to an identification result; a third machine position is arranged for reverse side detection and template matching; determining to enter a fourth machine position or move into a waste tank according to a detection result; a fourth machine position is arranged to execute microwave substrate placement and neat sleeving performance detection; determining whether sorting is completed or not according to a detection result; iDs are generated for each microwave substrate, data recording, query and tracing are carried out, and the whole-process processing quality of the microwave substrates is guaranteed. According to the invention, the whole-process treatment of the microwave substrate is realized, the product quality consistency and the production efficiency are improved, and higher economic benefits and quality management guarantee are brought to enterprises.

The invention discloses a phosphate-based low-dielectric LTCC (Low Temperature Co-Fired Ceramic) material and a preparation method thereof, the chemical expression of the phosphate-based low-dielectric LTCC material is Na2O-AO-MgO-xP2O5, A = Sr, Ca or Sr1-yCay, x is more than or equal to 1.0 and less than or equal to 1.2, and y is more than 0 and less than or equal to 0.2. The preparation process sequentially comprises the following steps: synthesizing LTCC ceramic powder, ball-milling, pressing and forming, and sintering to obtain the ceramic. The main crystal phase of the phosphate-based low dielectric LTCC material is Na2MMg (PO4) 2 (A = Sr, Ca or Sr1-yCay), and the phosphate-based low dielectric LTCC material has the advantages of low raw material cost, low sintering temperature (750-900 DEG C), low dielectric constant (8.2-9.3), high Qf value (41800-80310 GHz), simple preparation process, good reproducibility and the like, can solve the time delay problem of microwave signals in high-frequency communication, improves the stability of microwave signal transmission, and has good application prospects. The material is very suitable for being used as an LTCC microwave substrate, a dielectric antenna and other systems.

The present invention discloses a feed network system, belonging to the field of antenna feeding technology. It comprises four 2x2 rectangular arrays of equal-amplitude, 90° network sub-arrays and a power combining network composed of a four-in-one Wilkinson power combiner located at the bottom of the sub-arrays. The four arrays of equal-amplitude, 90° network sub-arrays achieve signal synthesis output through a cascaded four-in-one Wilkinson power combiner. The equal-amplitude, 90° network sub-arrays comprise a first metal ground plate, a first microwave substrate, a first metal signal line, a first prepreg, a second microwave substrate, a second metal ground plate, a second prepreg, a second metal signal line, a third microwave substrate, and a third metal ground plate, stacked sequentially from top to bottom. The microwave substrates are bonded together by prepregs, thereby achieving a feed network capable of connecting four feed points with right-handed equal-amplitude, 90° antenna signals. The present invention reduces the horizontal and lateral dimensions of the feed network, achieving miniaturization and high integration of the antenna array.

This invention discloses a method for preparing a low-loss ultrathin PTFE microwave dielectric substrate. The method includes the following steps: 1. Preparation of PTFE composite adhesive; 2. Impregnation with glass fiber cloth; 3. Lamination of sheet substrates. The PTFE microwave dielectric substrate prepared by this method has fine filler particles and a high filling rate, improving the uniformity of the ultrathin substrate thickness and dielectric constant. The substrate thickness is 0.065mm ± 0.008mm, and the dielectric constant at 10GHz is 2.95 ± 0.03. It also reduces the loss factor at high frequencies, with a loss factor ≤ 0.0011 at 10GHz. The preparation process is simple, easy to scale up for continuous production, and the microwave substrate exhibits excellent performance, meeting the stringent performance requirements of multilayer circuit boards in high-frequency communication applications.

The application discloses a self-embedded extendable antenna array, which is composed of an antenna unit, a multifunctional column, a mounting back plate, a connector, a self-embedded film and a fastening screw. The antenna printed board is composed of two layers of microwave substrates and one layer of a semi-cured sheet, one exponential metal patch and one feather-shaped metal patch, one feather-shaped metal patch, one exponential metal patch and one feather-shaped metal patch are respectively arranged on three surfaces of the microwave substrates, and a sandwich structure is formed. When the antenna printed board is mounted, 0.2mm-thick self-embedded films are pasted on both sides of the antenna printed board, the antenna printed board, the self-embedded film and the multifunctional column are in interference fit, so that self-embedded assembly is realized. The antenna unit and the multifunctional column are both modular units, so the size of the antenna array can be expanded by changing the size of the mounting back plate, meanwhile, the overall thickness of the antenna array is 18.5mm, the working bandwidth covers 9 times of frequency, and the antenna array has the characteristics of low profile and light weight.

The invention discloses a superconducting filtering coupling amplification assembly applied to a deep space exploration receiver system. The superconducting filtering coupling amplification assembly comprises a box body; the box body is divided into a first cavity and a second cavity which are mutually independent through a partition plate; a superconducting filtering coupling circuit is mounted in the first cavity; a low-temperature low-noise amplifier circuit is mounted in the second cavity; the signal output end of the superconducting filtering coupling circuit is connected with the signal input end of the low-temperature low-noise amplifier circuit through a bridging gold wire; the superconducting filter coupling circuit comprises a superconducting filter and a superconducting coupler which are integrated on the same dielectric substrate; the low-temperature low-noise amplifier circuit comprises a low-temperature low-noise amplifier chip and an amplifier biasing circuit which are integrated on the same microwave substrate. According to the invention, high-frequency-selection suppression filtering and low-noise receiving amplification of received signals can be realized, a calibration signal injection function is realized, and the amplifier is suitable for various microwave circuits, and is especially suitable for application scenes with extreme noise control requirements, such as a deep space exploration receiver and the like.

The application discloses a kind of ultra-low dielectric low-temperature silicate lithium aluminum microwave dielectric ceramic materials and preparation method and application, belong to ceramic material technical field.The ultra-low dielectric low-temperature silicate lithium aluminum microwave dielectric ceramic material of the present application has the chemical general formula:LiB x Al 1‑x SiO4;Wherein, 0.02≤x≤0.1, x represents molar mass.The ultra-low dielectric low-temperature silicate lithium aluminum microwave dielectric ceramic material of the present application has low dielectric constant and high quality factor and considerable resonance frequency temperature coefficient, has potential and is widely applied in manufacturing high-speed signal transmission medium antenna, microwave substrate, dielectric resonator and other microwave devices.

The application belongs to the field of microwave ferrite materials, and provides a garnet ferrite with high dielectric constant and high bending strength and a preparation method thereof, so as to solve the problems of abnormal grain growth and high porosity caused by excessive liquid phase in the sintering process of the existing high dielectric constant bismuth-substituted garnet ferrite, and the problem of low bending strength caused thereby. In the main phase system of the bismuth-containing microwave garnet ferrite, a proper amount of nano-SiO2 is introduced as a grain boundary regulator, which is conducive to forming a dense and uniform fine-grained microstructure and optimizing the ferromagnetic resonance line width; while maintaining the high dielectric constant endowed by the high polarization rate of bismuth ions, the fracture toughness and intrinsic strength of the ferrite are significantly improved by means of fine-grained strengthening mechanism, so that the bending strength of the ferrite is increased, thereby effectively solving the problems of micro-cracks and edge collapse easily occurring in the processing steps such as slicing, grinding and polishing of the high dielectric microwave substrate, and meeting the application requirements of miniaturization and high yield production of the microwave circulator and isolator.

The present invention provides a satellite-borne multi-layer microwave substrate and a satellite-borne multi-layer microwave component. The substrate comprises: a multi-layer microwave dielectric layer, and a matching circuit arranged inside the multi-layer microwave dielectric layer. The matching circuit comprises a plurality of metallized vertical through holes and a plurality of annular copper foils connected in series. Each metallized vertical through hole corresponds to and penetrates each microwave dielectric layer above the bottom layer, wherein the diameter of each metallized vertical through hole is different. An annular copper foil is arranged at the connection of two adjacent metallized vertical through holes, and the annular copper foil is arranged between the microwave dielectric layers and around the metallized vertical through hole, wherein the outer diameter of each annular copper foil is different, and the inner ring of the annular copper foil is electrically connected to the metallized vertical through hole. The present invention adopts a three-dimensional method to achieve impedance matching through the metallized vertical through hole and the annular copper foil inside the multi-layer microwave dielectric layer, and the matching circuit occupies a small area, thereby reducing the volume of the satellite-borne multi-layer microwave substrate and thus reducing the weight.

The utility model discloses a fine needle group module for microwave circuit chip substrate punching processing belongs to chip substrate punching technical field, and this group module includes removal assembly, punch assembly, storage box and drain pipe, and the cleaning assembly is through the cleaning board of torsional spring connection, can be in the automatic contact of hollow type punching fine needle upward reset, removes the substrate debris of fine needle surface attachment, avoids the chip with fine needle secondary and takes into the hole or pollutes other area, and the cleaning assembly is through the storage of storage tank deionized water, after punching is completed, and starts solenoid valve can utilize external air pressure, makes deionized water through drain pipe accurate injection in the hole, removes the residual debris and processing impurity in the hole, compared with traditional manual cleaning or corrosive solution cleaning, and deionized water will not corrode fine needle, also will not destroy microwave substrate material quality, guarantees the cleaning effect simultaneously, protects the performance and fine needle life of substrate, reduces the rework rate of follow -up.

The utility model relates to the technical field of wireless communication, in particular to an on-chip antenna circuit system based on board-level welding, which comprises an antenna board, a digital board and a bonding pad structure, the antenna board is used for receiving and transmitting millimeter wave frequency band signals, the digital board is used for processing digital signals and control logic, and the bonding pad structure is used for connecting the digital board and the bonding pad structure. The antenna board and the digital board are directly welded through the bonding pad structure. The pad structure is directly welded to replace a traditional connector, high-reliability connection between the antenna board and the digital board is achieved, and the risk of mechanical contact failure is eliminated. The bonding pad structure adopts an integrated design of a radio frequency signal bonding pad, a digital signal bonding pad, a power supply bonding pad and a ground bonding pad, supports transmission of multiple types of signals, and improves the integration level; in the split-board structure, a high-cost high-frequency microwave substrate and a low-cost universal printed circuit board substrate are used, so that the material cost is remarkably reduced.

The invention provides a feed interconnection excitation structure, which relates to electronic information, radar and communication systems and comprises a radio frequency microwave substrate, an antenna radiator, a parallel guide structure and a feed transmission line. The antenna radiators are symmetrically arranged on the radio frequency microwave substrate, the parallel guide structures are arranged at the positions, close to the radio frequency microwave substrate, of the opposite planes of the antenna radiators, and the antenna radiators form two side arms of the parallel guide structures; and the feed transmission line is located in the radio frequency microwave substrate, is used for exciting the parallel guide structure, and is interconnected with one side arm of the parallel guide structure through the multi-section step transformation structure to realize broadband excitation.

The invention relates to a microwave ultra-wideband coupling power detection device, which is used for performing power detection on a to-be-detected PCB (Printed Circuit Board), and comprises a shell unit, the shell unit comprises a sleeve and a connector assembly which are coaxially arranged, the sleeve and the connector assembly are connected to form an accommodating cavity, and the tail end of the sleeve is provided with a first through hole; the coupling unit comprises a central conductor and a microwave substrate assembly which are accommodated in the accommodating cavity; the central conductor is coaxially arranged on the connector assembly; the microwave substrate assembly comprises a first substrate assembly and a second substrate assembly; one end of the first substrate assembly is elastically connected with the central conductor, and the other end of the first substrate assembly is elastically connected with the second substrate assembly. On the premise that an original circuit structure and overall functions are not affected, the power of each node in microwave PCB circuit debugging can be accurately detected, so that online accurate measurement of the power of each node of the microwave PCB circuit is realized, a tested object can be ensured to be intact, and the tested circuit is prevented from being damaged.

The invention discloses a broadband integrated low-profile phased array integrated network. A monitoring network is located right above an aperture transformation network. The aperture transformation network is of a microstrip line or strip line structure and comprises a first lower-layer signal feeder line, a first middle-layer microwave substrate and a first upper-layer metal floor which are sequentially stacked from bottom to top. The main body part of the monitoring network adopts a substrate integrated waveguide structure, and comprises a substrate integrated waveguide coupling power divider, a broadband gradient impedance matching structure, a microstrip feeder line and a terminal absorption load. According to the invention, the aperture transformation network and the monitoring network are integrated through the multilayer microwave plate vertical interconnection processing technology, the number of hardware equipment is reduced, the spatial layout is optimized, the integration level of the system is improved, and the system has the characteristics of miniaturization, light weight and easy processing. Furthermore, a substrate integrated waveguide coupling power divider is adopted, amplitude and phase data of signals in each channel can be extracted independently, electromagnetic interference of the external environment can be shielded through a closed structure, and calibration precision and consistency of monitoring signals between the channels are improved.

The present invention provides a microwave interconnection structure between boards adaptable to DC to 40 GHz, adopting a cross-shaped rounded corner mirror symmetry structure, which includes left and right high-impedance parts, a middle rounded corner low-impedance part and an arc structure. The left and right high-impedance parts are arranged on both sides of the middle rounded corner low-impedance part, and the arc structure is used for the connection transition between the left and right high-impedance parts and the middle rounded corner low-impedance part; the center line of the interconnection structure of the middle rounded corner low-impedance part is sunken downward to the bottom of the gap between the microwave boards. The present invention realizes the uniform transmission of broadband microwave signal energy between microwave substrates, the insertion loss of microwave signals at each frequency within the working bandwidth is the same, and at the same time, the reflection signals at any frequency within the bandwidth can be reduced to an extremely low level, achieving good matching.

The application discloses a phosphate-based low-dielectric LTCC material and a preparation method thereof. A O-MgO- x P2O5, wherein A =Sr, Ca or Sr 1‑y Ca y , 1.0<= x <=1.2, 0< y <=0.2. The preparation process is as follows: LTCC ceramic powder synthesis, ball milling, compression molding, sintering into ceramic. The main crystal phase of the phosphate-based low-dielectric LTCC material is Na2AMg(PO4)2, wherein A =Sr, Ca or Sr 1‑y Ca y , has the advantages of low raw material cost, low sintering temperature (750-900 DEG C), low dielectric constant (8.2-9.3), high Q f value (41800-80310 GHz), simple preparation process, good reproducibility and the like, and can solve the time delay problem of microwave signals in high-frequency communication, improves the stability of microwave signal transmission, and is very suitable for being used as an LTCC microwave substrate, a dielectric antenna and the like.

The invention discloses an integrated reflow welding tool and method for multi-dimensional parts of a microwave assembly. The tool comprises a center positioning module and upper, lower, left and right dimension pressure applying modules; a positioning groove is formed in the middle of the center positioning module and used for containing a box body, a pushing and pressing elastic device is arranged on the inner side wall of the positioning groove and used for positioning the box body in the positioning groove, and positioning pins are arranged on the upper side, the lower side, the left side and the right side of the center positioning module; elastic locking mechanisms connected with the positioning pins are arranged at four corners of an upper cover plate and a lower cover plate of the upper dimension pressure applying module and the lower dimension pressure applying module, and a plurality of single-point elastic pressing tools are fixed on the upper cover plate and the lower cover plate and used for pressing the microwave substrate and the power panel respectively; a left cover plate and a right cover plate of the left dimension pressure applying module and the right dimension pressure applying module are provided with elastic locking mechanisms connected with the positioning pins, and a plurality of single-point elastic pressing tools are fixed to the left cover plate and the right cover plate and used for pressing a power connector and a radio frequency connector. According to the invention, multi-dimensional integrated assembling and welding of multi-dimensional high-integration microwave assembly parts can be realized.

The invention discloses a sintering and bonding assembly process method for a complex radio frequency module. According to the sequence of process temperatures from high to low, the process method comprises the steps of reflow soldering of a power panel surface-mounted component, sintering of a microwave substrate and a cavity, sintering of a radio frequency connector and the cavity and sintering of a low-frequency connector and the cavity. Sintering the surface-mounted power panel and the cavity; welding a surface-mounted device filter on the microwave substrate; bonding a radio frequency connector welding carrier and the filter at low stress; and bonding a bare chip. According to the scheme, complete assembly of the complex radio frequency assembly is completed within the sintering welding bonding temperature corresponding to limited process welding flux.

The invention discloses a bismaleimide-triazine resin (BT)-based high-frequency composite dielectric substrate suitable for the field of microwave substrates and a preparation method of the bismaleimide-triazine resin (BT)-based high-frequency composite dielectric substrate. According to the substrate, a bismaleimide-triazine resin composition is used as matrix resin, spherical silicon dioxide with a low dielectric constant is used as a filling material, and the composite substrate with the low dielectric constant, the low dielectric loss and the low thermal expansion coefficient is obtained. Meanwhile, the problem that the original thermal conductivity of the BT resin is poor is also improved. The raw materials selected by the method are easy to obtain, the preparation process is simple and controllable, the preparation process is low in energy consumption and short in time consumption, and the method can be applied to the high-speed and high-frequency field and has wide application prospects.

The embodiment of the invention relates to the technical field of communication, and discloses an antenna unit and a communication device, the antenna unit and the communication device comprise a dielectric substrate, a substrate integrated waveguide structure, a radiation slot and a coplanar waveguide feed structure, the substrate integrated waveguide structure is arranged in the dielectric substrate, and the coplanar waveguide feed structure is arranged in the radiation slot. The substrate integrated waveguide structure is formed by a plurality of conductive assemblies arranged along a preset path, the plurality of conductive assemblies penetrate through the thickness direction of the dielectric substrate, the radiation slot is located in a coverage area of the substrate integrated waveguide structure, the coplanar waveguide feed structure is electrically connected with the substrate integrated waveguide structure, and the coplanar waveguide feed structure is electrically connected with the dielectric substrate. And the antenna is used for feeding to the radiation slot. Through the above mode, the embodiment of the invention can effectively solve the technical problem of low antenna radiation efficiency caused by overlarge dielectric loss of a conventional microwave substrate in the prior art by adopting a combination scheme of the low-loss dielectric substrate and the substrate integrated waveguide structure.