7 results about "Microwave substrate" patented technology

This invention discloses a method for preparing a low-loss ultrathin PTFE microwave dielectric substrate. The method includes the following steps: 1. Preparation of PTFE composite adhesive; 2. Impregnation with glass fiber cloth; 3. Lamination of sheet substrates. The PTFE microwave dielectric substrate prepared by this method has fine filler particles and a high filling rate, improving the uniformity of the ultrathin substrate thickness and dielectric constant. The substrate thickness is 0.065mm ± 0.008mm, and the dielectric constant at 10GHz is 2.95 ± 0.03. It also reduces the loss factor at high frequencies, with a loss factor ≤ 0.0011 at 10GHz. The preparation process is simple, easy to scale up for continuous production, and the microwave substrate exhibits excellent performance, meeting the stringent performance requirements of multilayer circuit boards in high-frequency communication applications.

The invention discloses a superconducting filtering coupling amplification assembly applied to a deep space exploration receiver system. The superconducting filtering coupling amplification assembly comprises a box body; the box body is divided into a first cavity and a second cavity which are mutually independent through a partition plate; a superconducting filtering coupling circuit is mounted in the first cavity; a low-temperature low-noise amplifier circuit is mounted in the second cavity; the signal output end of the superconducting filtering coupling circuit is connected with the signal input end of the low-temperature low-noise amplifier circuit through a bridging gold wire; the superconducting filter coupling circuit comprises a superconducting filter and a superconducting coupler which are integrated on the same dielectric substrate; the low-temperature low-noise amplifier circuit comprises a low-temperature low-noise amplifier chip and an amplifier biasing circuit which are integrated on the same microwave substrate. According to the invention, high-frequency-selection suppression filtering and low-noise receiving amplification of received signals can be realized, a calibration signal injection function is realized, and the amplifier is suitable for various microwave circuits, and is especially suitable for application scenes with extreme noise control requirements, such as a deep space exploration receiver and the like.

The application belongs to the field of microwave ferrite materials, and provides a garnet ferrite with high dielectric constant and high bending strength and a preparation method thereof, so as to solve the problems of abnormal grain growth and high porosity caused by excessive liquid phase in the sintering process of the existing high dielectric constant bismuth-substituted garnet ferrite, and the problem of low bending strength caused thereby. In the main phase system of the bismuth-containing microwave garnet ferrite, a proper amount of nano-SiO2 is introduced as a grain boundary regulator, which is conducive to forming a dense and uniform fine-grained microstructure and optimizing the ferromagnetic resonance line width; while maintaining the high dielectric constant endowed by the high polarization rate of bismuth ions, the fracture toughness and intrinsic strength of the ferrite are significantly improved by means of fine-grained strengthening mechanism, so that the bending strength of the ferrite is increased, thereby effectively solving the problems of micro-cracks and edge collapse easily occurring in the processing steps such as slicing, grinding and polishing of the high dielectric microwave substrate, and meeting the application requirements of miniaturization and high yield production of the microwave circulator and isolator.

The utility model discloses a fine needle group module for microwave circuit chip substrate punching processing belongs to chip substrate punching technical field, and this group module includes removal assembly, punch assembly, storage box and drain pipe, and the cleaning assembly is through the cleaning board of torsional spring connection, can be in the automatic contact of hollow type punching fine needle upward reset, removes the substrate debris of fine needle surface attachment, avoids the chip with fine needle secondary and takes into the hole or pollutes other area, and the cleaning assembly is through the storage of storage tank deionized water, after punching is completed, and starts solenoid valve can utilize external air pressure, makes deionized water through drain pipe accurate injection in the hole, removes the residual debris and processing impurity in the hole, compared with traditional manual cleaning or corrosive solution cleaning, and deionized water will not corrode fine needle, also will not destroy microwave substrate material quality, guarantees the cleaning effect simultaneously, protects the performance and fine needle life of substrate, reduces the rework rate of follow -up.

The utility model relates to the technical field of wireless communication, in particular to an on-chip antenna circuit system based on board-level welding, which comprises an antenna board, a digital board and a bonding pad structure, the antenna board is used for receiving and transmitting millimeter wave frequency band signals, the digital board is used for processing digital signals and control logic, and the bonding pad structure is used for connecting the digital board and the bonding pad structure. The antenna board and the digital board are directly welded through the bonding pad structure. The pad structure is directly welded to replace a traditional connector, high-reliability connection between the antenna board and the digital board is achieved, and the risk of mechanical contact failure is eliminated. The bonding pad structure adopts an integrated design of a radio frequency signal bonding pad, a digital signal bonding pad, a power supply bonding pad and a ground bonding pad, supports transmission of multiple types of signals, and improves the integration level; in the split-board structure, a high-cost high-frequency microwave substrate and a low-cost universal printed circuit board substrate are used, so that the material cost is remarkably reduced.

The invention discloses a broadband integrated low-profile phased array integrated network. A monitoring network is located right above an aperture transformation network. The aperture transformation network is of a microstrip line or strip line structure and comprises a first lower-layer signal feeder line, a first middle-layer microwave substrate and a first upper-layer metal floor which are sequentially stacked from bottom to top. The main body part of the monitoring network adopts a substrate integrated waveguide structure, and comprises a substrate integrated waveguide coupling power divider, a broadband gradient impedance matching structure, a microstrip feeder line and a terminal absorption load. According to the invention, the aperture transformation network and the monitoring network are integrated through the multilayer microwave plate vertical interconnection processing technology, the number of hardware equipment is reduced, the spatial layout is optimized, the integration level of the system is improved, and the system has the characteristics of miniaturization, light weight and easy processing. Furthermore, a substrate integrated waveguide coupling power divider is adopted, amplitude and phase data of signals in each channel can be extracted independently, electromagnetic interference of the external environment can be shielded through a closed structure, and calibration precision and consistency of monitoring signals between the channels are improved.

The application discloses a phosphate-based low-dielectric LTCC material and a preparation method thereof. A O-MgO- x P2O5, wherein A =Sr, Ca or Sr 1‑y Ca y , 1.0<= x <=1.2, 0< y <=0.2. The preparation process is as follows: LTCC ceramic powder synthesis, ball milling, compression molding, sintering into ceramic. The main crystal phase of the phosphate-based low-dielectric LTCC material is Na2AMg(PO4)2, wherein A =Sr, Ca or Sr 1‑y Ca y , has the advantages of low raw material cost, low sintering temperature (750-900 DEG C), low dielectric constant (8.2-9.3), high Q f value (41800-80310 GHz), simple preparation process, good reproducibility and the like, and can solve the time delay problem of microwave signals in high-frequency communication, improves the stability of microwave signal transmission, and is very suitable for being used as an LTCC microwave substrate, a dielectric antenna and the like.