4 results about "Microwave substrate" patented technology

The application belongs to the field of microwave ferrite materials, and provides a garnet ferrite with high dielectric constant and high bending strength and a preparation method thereof, so as to solve the problems of abnormal grain growth and high porosity caused by excessive liquid phase in the sintering process of the existing high dielectric constant bismuth-substituted garnet ferrite, and the problem of low bending strength caused thereby. In the main phase system of the bismuth-containing microwave garnet ferrite, a proper amount of nano-SiO2 is introduced as a grain boundary regulator, which is conducive to forming a dense and uniform fine-grained microstructure and optimizing the ferromagnetic resonance line width; while maintaining the high dielectric constant endowed by the high polarization rate of bismuth ions, the fracture toughness and intrinsic strength of the ferrite are significantly improved by means of fine-grained strengthening mechanism, so that the bending strength of the ferrite is increased, thereby effectively solving the problems of micro-cracks and edge collapse easily occurring in the processing steps such as slicing, grinding and polishing of the high dielectric microwave substrate, and meeting the application requirements of miniaturization and high yield production of the microwave circulator and isolator.

The utility model discloses a fine needle group module for microwave circuit chip substrate punching processing belongs to chip substrate punching technical field, and this group module includes removal assembly, punch assembly, storage box and drain pipe, and the cleaning assembly is through the cleaning board of torsional spring connection, can be in the automatic contact of hollow type punching fine needle upward reset, removes the substrate debris of fine needle surface attachment, avoids the chip with fine needle secondary and takes into the hole or pollutes other area, and the cleaning assembly is through the storage of storage tank deionized water, after punching is completed, and starts solenoid valve can utilize external air pressure, makes deionized water through drain pipe accurate injection in the hole, removes the residual debris and processing impurity in the hole, compared with traditional manual cleaning or corrosive solution cleaning, and deionized water will not corrode fine needle, also will not destroy microwave substrate material quality, guarantees the cleaning effect simultaneously, protects the performance and fine needle life of substrate, reduces the rework rate of follow -up.

The application discloses a phosphate-based low-dielectric LTCC material and a preparation method thereof. A O-MgO- x P2O5, wherein A =Sr, Ca or Sr 1‑y Ca y , 1.0<= x <=1.2, 0< y <=0.2. The preparation process is as follows: LTCC ceramic powder synthesis, ball milling, compression molding, sintering into ceramic. The main crystal phase of the phosphate-based low-dielectric LTCC material is Na2AMg(PO4)2, wherein A =Sr, Ca or Sr 1‑y Ca y , has the advantages of low raw material cost, low sintering temperature (750-900 DEG C), low dielectric constant (8.2-9.3), high Q f value (41800-80310 GHz), simple preparation process, good reproducibility and the like, and can solve the time delay problem of microwave signals in high-frequency communication, improves the stability of microwave signal transmission, and is very suitable for being used as an LTCC microwave substrate, a dielectric antenna and the like.