Mg2SiO4 dielectric constant microwave ceramic medium and its producing process

Abstract

The invention discloses an Mg2SiO4 microwave dielectric ceramic with low dielectric constant and a method for preparing the same. The invention obtains a single phase high purity Mg2SiO4 ceramic through controlling the nonstoichiometric ratio of Mg to Si. The method overcomes the defect that the ceramic is easy to generate a second phase after the prior sintering according to the molar ratio of a chemical formula 2MgO.SiO2. The Mg2SiO4 ceramic obtained by the method has a low dielectric constant between 6 and 8, the dielectric loss thereof is less than 10<-5>, and the Qf thereof is more than 160, 000 GHz. The high-quality microwave dielectric ceramic with low dielectric constant is used as a material for manufacturing electronic circuit substrates, dielectric resonators, filters, microwave substrates and microstrip lines, and has important application prospect and great economic value in the fields of electronic circuit, microwave mobile communication, satellite communication and radar system.

Description

technical field [0001] The invention belongs to the field of electronic information materials and devices, in particular to a Mg 2 SiO 4 Low dielectric constant microwave dielectric ceramic and its preparation method. Background technique [0002] With the rapid development of microwave communication and radar technology, the research of microwave dielectric materials is also developing towards the high-end direction of microwave. The development of microwave dielectric resonators, filters and microwave substrate materials with a dielectric constant less than 10, low loss, high Q value and near-zero resonant frequency temperature coefficient has become a key issue in the development of electronic information technology. At present, the dielectric constants of microwave dielectric materials sold on the market are mainly 16-25 magnesium titanate series, 30-50 barium-calcium perovskite structure and 70-100 tungsten bronze structure microwave dielectric materials. For microwa...

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Problems solved by technology

[0003] Mg currently on the market 2 SiO 4 It is mainly used as an electronic circuit substrate, and the key problem is that SiO 2 Easily react with MgO to form perovskite structure MgSiO 3 Pyroxene phase, MgSiO 3 The dielectric constant is 6-8, but the loss is very large at 10 -3 Left and right, it is difficult to eliminate the existence of pyroxene phase through traditional adjustment of sintering process and improvement of heat treatment method, and the existence of pyroxene phase deteriorates the Mg 2 SiO 4 microwave properties, eliminating the second phase MgSiO 3 The presence of pyroxene phase becomes necessary