5results about How to "Improve Microwave Performance" patented technology

The invention relates to the technical field of electronic ceramics, in particular to a low-cost ultra-low dielectric microwave dielectric ceramic material and a preparation method thereof.The low-cost ultra-low dielectric microwave dielectric ceramic material comprises, by mass, 4.1% of MgO, 36.4% of H2SiO3, 31.5% of Al2O3 and 28% of talc, talcum powder and Al2O3, H2SiO3 and MgO with the purity larger than or equal to 99% serve as initial raw materials, the microwave dielectric material Mg2.15 Al4Si5O18.15 is prepared through a solid-phase sintering method, and the microwave dielectric ceramic material is prepared through a microwave sintering method. The microwave performance of the material is excellent, the dielectric constant epsilon r is 3.82-4.42, the quality factor Q * f is 36653-64628 GHz, and the temperature coefficient of resonance frequency tau f is-26.02--24.80 ppm / DEG C. The ultra-low dielectric microwave dielectric ceramic material adopts talc to replace part of a silicon raw material and a magnesium raw material, the content of the silicon raw material and the magnesium raw material is greatly reduced, compared with the silicon raw material and the magnesium raw material, the talc is extremely low in cost, and the cost is low. The raw material cost is reduced, the preparation is easy, and great commercial potential is achieved. In addition, the added value of talc is improved, and development of related industries is promoted.

The invention relates to the technical field of electronic ceramic preparation, in particular to a low-loss glass ceramic material applied to LTCC (low temperature co-fired ceramic) and a preparation method thereof.The low-loss glass ceramic material is prepared from CaCO3 with the purity of 99%, Al2O3 with the purity of 99.91% and B2O3 with the purity of 98% according to the mass ratio of CaCO3: 29.47-37.92%; the content of Al2O3 is 9.57%-29.74%; the preparation method comprises the following steps: preparing materials, carrying out ball milling, and carrying out a sintering method. The microwave performance of the material is excellent, the dielectric constant epsilon r is 4-6, the quality factor Q * f is 23605-54699 GHz, the temperature coefficient of resonance frequency tau f is-40 ppm / DEG C to-20 ppm / DEG C, and the material is easy to prepare and has great application and market potential. Therefore, the problem of high loss of the existing dielectric material is solved.

This invention provides a microwave dielectric ceramic material and its preparation method for low ESR capacitors, belonging to the field of ceramic materials technology. By optimizing the composition and ratio of the main material, sintering aid, and modifying additives, this invention achieves both low dielectric constant and low ESR (high Q value) while maintaining an extremely stable temperature coefficient, effectively solving the problem of simultaneously achieving dielectric performance and temperature stability in existing technologies. The microwave dielectric ceramic material provided by this invention can be sintered in a reducing atmosphere and can be used to prepare low ESR, high Q value, and narrow temperature coefficient copper electrode multilayer ceramic capacitors, avoiding silver migration phenomenon in silver-internal electrode MLCCs, effectively improving device reliability and lifespan. It has broad application prospects in high-end fields such as communication base stations, radar, medical equipment, military industry, and AI servers, and the microwave capacitors prepared from it have significant practical value and market application prospects.

The invention discloses a non-welding replacement design method for a high-speed and high-density electric connector based on fuzz buttons. According to the invention, the specification and dimension of the fuzz button contact element are restrained, the PCB design requirement is adjusted, the high-speed interconnection contact stability of the fuzz button connector between parallel plates is improved, and the high-speed interconnection contact stability of the fuzz button connector between the parallel plates is improved. Further, the fuzz button microwave characteristic advantage is utilized, the rate upper limit of electrical signal interconnection between the parallel plates is improved, and the method has non-negligible value and application prospect for further improving the operational capability of aviation equipment.

The invention discloses a V-frequency-band narrow-passband superconducting filter, and relates to the technical field of microwave communication, the filter comprises a monomer assembly and a superconducting thin film substrate, and the monomer assembly comprises a plurality of resonator units; the plurality of resonator units are arranged on one side surface of the superconducting thin film substrate in parallel in a cascading manner; a hollow blank structure is arranged in each resonator unit, a plurality of coils are arranged outside the hollow blank structures, and the plurality of coils are of a 1 / 4 wavelength single spiral structure. By adopting the 1 / 4 wavelength single spiral structure, the structure of the resonator unit is more compact, so that the microwave performance of the V-band narrow-passband superconducting filter is higher by adopting multiple sections of resonator units under the condition that the structure is more compact.